公开(公告)号：KR1020110082951A

公开(公告)日：2011-07-20

申请号：KR1020100002904

申请日：2010-01-12

Applicant: 서울대학교산학협력단

Inventor： 김용권 ,  박재형 ,  유병욱

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/12

Abstract: PURPOSE: A method for a vertically penetrated silicon electrode with an insulating glass part is provided to fill insulating glass around a silicon pillar to manufacture a penetration electrode, thereby simplifying manufacturing processes by eliminating a process which fills metal materials in a via hole. CONSTITUTION: A protective pattern is formed on one side of a silicon wafer to form a silicon electrode(S100). The silicon wafer is etched to form a silicon electrode(S200). The silicon wafer is bonded with a glass wafer(S300). The bonded glass wafer is dissolved(S400). Both sides of the silicon wafer and the glass wafer are processed so that the thicknesses of the silicon wafer and the glass wafer become a fixed thickness(S500).

Abstract translation: 目的：提供一种具有绝缘玻璃部件的垂直穿透的硅电极的方法，以填充硅柱周围的绝缘玻璃以制造穿透电极，从而通过消除填充通孔中的金属材料的工艺来简化制造工艺。 构成：在硅晶片的一侧形成保护图案以形成硅电极（S100）。 蚀刻硅晶片以形成硅电极（S200）。 硅晶片与玻璃晶片（S300）接合。 粘合玻璃晶片溶解（S400）。 处理硅晶片和玻璃晶片的两侧，使得硅晶片和玻璃晶片的厚度变为固定厚度（S500）。

公开(公告)号：KR1020110082949A

公开(公告)日：2011-07-20

申请号：KR1020100002897

申请日：2010-01-12

Applicant: 서울대학교산학협력단

Inventor： 김용권 ,  박재형 ,  유병욱

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/12

Abstract: PURPOSE: A method for manufacturing a vertically penetrated metal electrode including an insulating glass part is provided to plate or deposit metal on the circumference of a low resistive silicon pillar, thereby lowering the resistance of a penetration resistor under an existing via resistance. CONSTITUTION: A protection pattern for forming a low resistance silicon pillar is formed on one side of a low resistance silicon wafer(S100). The low resistance silicon wafer is etched to form a low resistance silicon pillar(S200). Metal is plated or deposited on the low resistance silicon wafer(S300). The low resistance silicon wafer is bonded with a glass wafer(S400). The bonded glass wafer is dissolved(S500). The bonded low resistance silicon wafer and both sides of the glass wafer are processed(S600).

Abstract translation: 目的：提供一种用于制造包括绝缘玻璃部件的垂直穿透的金属电极的方法，以在低电阻硅柱的圆周上镀金或沉积金属，从而降低了现有通孔电阻下的穿透电阻器的电阻。 构成：在低电阻硅晶片的一侧形成用于形成低电阻硅柱的保护图案（S100）。 蚀刻低电阻硅晶片以形成低电阻硅柱（S200）。 将金属电镀或沉积在低电阻硅晶片上（S300）。 低电阻硅晶片与玻璃晶片（S400）接合。 粘合玻璃晶片溶解（S500）。 处理粘合低电阻硅晶片和玻璃晶片的两侧（S600）。