公开(公告)号：KR1020110031107A

公开(公告)日：2011-03-24

申请号：KR1020100089733

申请日：2010-09-14

Applicant: 주성엔지니어링(주)

Inventor： 허승회

IPC: H01L21/205

CPC classification number: H01J37/32577 ,  C23C16/50

Abstract: PURPOSE: A plasma processing apparatus is provided to form a uniform thin film on a substrate by uniformizing the density of plasma generated between plasma reaction spaces of a chamber. CONSTITUTION: A substrate support unit is installed in a chamber and supports a substrate. A top electrode(140) is installed in the chamber to face the substrate support unit. High frequency power and process gas are supplied to the top electrode. A ground plate(160) is installed on the upper side of the top electrode to be electrically grounded. A plurality of reactance units(190) are electrically connected between the edges of the top electrode and the ground plate and increase the distribution of currents applied to each edge of the top electrode.

Abstract translation: 目的：提供等离子体处理装置，通过均匀化在室的等离子体反应空间之间产生的等离子体的密度，在基板上形成均匀的薄膜。 构成：衬底支撑单元安装在腔室中并支撑衬底。 顶部电极（140）安装在腔室中以面对衬底支撑单元。 将高频功率和工艺气体供应到顶部电极。 接地板（160）安装在上电极的上侧以进行电接地。 多个电抗单元（190）电连接在顶部电极和接地板的边缘之间，并且增加施加到顶部电极的每个边缘的电流分布。