Abstract:
The present invention relates to a method for manufacturing a manganese-silicon-based thermoelectric material having an outstanding performance with a low cost by hot forming aluminum-doped high-manganese-silicon-based powder, formed by a solid state reaction, in a vacuum state. The method of the present invention comprises the steps of: mixing Mn powder, Si powder, and Al powder; synthesizing aluminum-doped high-manganese-silicon-based powder via a solid state reaction of the mixed powder; and sintering the synthesized aluminum-doped high-manganese-silicon-based powder by hot forming.
Abstract:
PURPOSE: A bulk thermoelectric material and a thermoelectric device comprising the same are provided to improve performance of a thermal conduction material in a bulk by applying a metal oxide particle to a thermal conduction material matrix. CONSTITUTION: A thermal conduction material comprises a crystalline thermal conduction material matrix and a metal oxide particle. The crystalline thermal conduction material matrix is formed on a bulk. The metal oxide particle is independently introduced inside the crystal boundary or the crystalline structure of the thermal conduction material matrix. A covalent force between the oxygen atom and the metal atom is bigger than that of atoms within the crystalline structure of the thermal conduction material matrix.
Abstract:
A process of fabricating a cobalt triantimonide(CoSb3) based thermoelectric material with Nb doping is provided to produce the material with improved thermoelectric properties including electric conductivity, thermoelectric factor and seeback coefficient by doping niobium to CoSb3 thermoelectric material and heat treating the doped material through annealing process. The process includes the steps of: preparing Co, Sb and Nb as starting materials in state of elements; forming Co(1-x)NbxSb3 wherein x ranges from 0.01 to 0.02 by mixing all of the starting materials and induction melting the mixture under Ar atmosphere; and annealing the molten material at 400deg.C to accomplish phase homogeneity and phase alteration thereof. By the suitable heat treatment after doping Nb element on CoSb3 thermoelectric material, the CoSb3 based thermoelectric material is produced with remarkably improved seeback coefficient, electric conductivity and thermoelectric factor.
Abstract:
A skutterudite-based thermoelectric material doped with Fe and a manufacturing method thereof are provided to manufacture a skutterudite alloy of CoSb3 having little micro crack through a simple process. Powders of Fe, Co, and Sb are prepared to obtain a composition of FexCo(4-x)Sb12, and then the powders are mixed. The mixed powders are subjected to a mechanical alloy process under an inert atmosphere. The powders subjected to the mechanical alloy process are subjected to a hot rolling and compression molding process. The mechanical alloy process is performed by an attritor.
Abstract:
PURPOSE: A method for manufacturing an alloy for squeeze casting is provided to improve castability by pressurizing effect during squeeze casting, and improve tensile strength by pressurizing and rapidly cooling effects due to squeeze casting. CONSTITUTION: A method for manufacturing an alloy for squeeze casting comprises the processes of choosing an alloy in which 1 to 7 wt.% of Fe is contained and AC4C alloy as starting alloys, melting the alloys at a temperature of 850 to 900 deg.C in an electric resistance furnace, gravity casting and squeeze casting the melted alloys with melt which is multi-gas treated within the range of 0.2 melt weight, manufacturing a sample in a bar shape having a size of 5 mm (diameter) x 10 cm (length) using a vertically pressurized type squeeze casting press (1) in the squeeze casting, wherein 750 deg.C of a temperature of the melt is maintained as an injection temperature, preheating a mold (4) at a temperature of 200 to 250 deg.C so that inner surface of the mold (4) and a punch (2) are coated with an oil based graphite releasing agent, and presetting a pressurizing pressure of 50 to 100 MPa, a pressurizing time of 60 sec, and a pressurizing rate of 20 mm/sec after injecting the melt.
Abstract:
Bi 2 Te 2 .85 Se 0 .15 의 캐리어 농도의 최적화와 함께 출력인자와 성능지수의 향상을 이루어 열전특성이 개선된 Bi-Te-Se계 고용체로 이루어진 열전 재료를 제시한다. 그 열전 재료는 Bi 2 Te 2 .85 Se 0 .15 :D m (D= I, Cu, Ag, m= 0보다 크고 0.03 미만)의 화학양론적 조성으로, D가 Bi 2 Te 2 .85 Se 0 .15 에 도핑된 Bi-Te-Se계 고용체로 이루어진다.
Abstract:
The present invention relates to a method for manufacturing a high manganese silicide-based thermoelectric material having excellent performance with low costs by hot pressing high manganese silicide powder, formed by planetary ball milling, in a vacuum state, the method comprising: a first step of mixing manganese powder and silicon powder according to the composition of MnSi1.75-x(0
Abstract:
열전 특성이 우수한 고효율 열전 재료 및 그 제조방법을 제공한다. 이를 위하여, 원료물질인 Zr, Ni, Sn, Sb 분말을 혼합하여 혼합 분말을 제조하는 단계; 상기 혼합 분말을 기계적 합금화 처리하는 단계; 및 진공 핫 프레스 공정을 수행하는 단계를 포함하여 ZrNiSn 1 -x Sb x (0