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公开(公告)号：KR101617547B1
公开(公告)日：2016-05-03
申请号：KR1020140163469
申请日：2014-11-21
Applicant: 한국세라믹기술원 , 주식회사 비츠로머티리얼
IPC: H01C7/112
CPC classification number: H01C7/112
Abstract: 본발명은 ZnO와, ZnBiVO와, Co 산화물또는 Mn 산화물을포함하되, BiO, VO, PrO및 PrO를포함하지않는 ZnO계바리스터조성물을개시한다. 이조성물은또한 Ni 산화물, Sb 산화물, Cr 산화물및 Ca 산화물들로이루어진군 중의하나이상을더 포함할수 있다. 이와같은본 발명의 ZnO계바리스터조성물은종래의 BiO, VO및 Pr계조성성분들을대체하면서도높은비선형계수와낮은누설전류를가지면서도절감된제조경비를가능하게한다.
Abstract translation: 在本发明中，公开了包含ZnO，Zn2BiVO6，Co氧化物或Mn氧化物但不包括Bi 2 O 3，V 2 O 5，Pr 6 O 11和Pr 2 O 3的ZnO系非线性电阻组合物。 该组合物还包括一种或多种包含Ni氧化物，Sb氧化物，Cr氧化物和Ca氧化物的组。 本发明的这种ZnO系压敏电阻组合物代替现有的Bi 2 O 3，V 2 O 5和Pr基组合物成分，具有高非线性系数和低漏电流，并降低制造成本。
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公开(公告)号：KR101576891B1
公开(公告)日：2015-12-14
申请号：KR1020140130235
申请日：2014-09-29
Abstract: ZnSOㆍ7HO와 NaSㆍ9HO를이용하여액상공정중 한방법인수열합성법으로 ZnS 분말을수득한후, ZnS 분말을 SPS(Spark Plasma Sintering)법으로소결함으로써, 상대밀도, 투과도, 굴절률등의물성을향상시킬수 있는장파장적외선투과용 ZnS 소결체및 그제조방법에대하여개시한다. 본발명에따른장파장적외선투과용 ZnS 소결체제조방법은 (a) ZnSOㆍ7HO 및 NaSㆍ9HO를용매에혼합하여 120 ~ 260℃조건에서수열합성하는단계; (b) 상기수열합성된반응물을필터링및 건조하여 ZnS 분말을수득하는단계; 및 (c) 상기수득한 ZnS 분말을 SPS(spark plasma sintering) 방법으로 900 ~ 1000℃에서소결하여 ZnS 소결체를형성하는단계;를포함하는것을특징으로한다.
Abstract translation: 公开了一种用于长波红外线透射率的ZnS烧结体及其制造方法，其通过以水热合成法获得ZnS粉末来提高诸如相对密度，透射率和折射率之类的性能，这是液体方法的方法， 使用ZnSO 4·7H 2 O和Na 2 S·9H 2 O，并用放电等离子体烧结（SPS）法烧结ZnS粉末。 根据本发明，长波红外透射率的ZnS烧结体的制造方法包括：（a）将ZnSO 4·7H 2 O与Na 2 S·9H 2 O与溶剂混合的步骤，在120〜260℃进行水热合成（b ）过滤并干燥其上进行水热合成以获得ZnS粉末的反应物的步骤; 和（c）在900〜1000℃下用SPS法烧结得到的ZnS粉末，形成ZnS烧结体的工序。
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公开(公告)号：KR101269848B1
公开(公告)日：2013-06-07
申请号：KR1020100082526
申请日：2010-08-25
Applicant: 한국세라믹기술원
Abstract: 본 발명에 따른 CIGS 분말의 제조방법에 의하면, CIGS
합성공정에 있어서 소위 결정핵의 기능을 하는 시드(seed)를 먼저 형성하고 이를 이용하여 그 주위에 단일상이 결집되도록 하는 메카니즘으로써 단일상의 CIGS 결정구조를 제조한다. 이로써, 비진공방식으로서 균일하고 대면적의 CIGS 광흡수층을 제조가능한 단일상의 CIGS 나노분말의 제조가 가능하다.-
公开(公告)号：KR101174407B1
公开(公告)日：2012-08-16
申请号：KR1020090084813
申请日：2009-09-09
Applicant: 한국세라믹기술원
CPC classification number: Y02P70/56
Abstract: 본발명에서는소정의단위모듈이적어도하나이상적층되어일체화된고체전해질연료전지의제조방법이개시된다. 상기단위모듈은하측및 상측에제1 및제2 고체전해질테이프(24)가중첩된제1 지지체(24)와, 이에중첩되는제2 지지체(24), 그리고다시하측및 상측에제1 및제2 고체전해질테이프(24)가중첩된제1 지지체(24)가적층된적층체(32)로구성된다. 이러한단위모듈은복수로적층되어하나의모듈을구성하며, 특히먼저공기유로가형성되고이후연료유로가형성되며, 분리판, 연결재, 밀봉재등의조립용부재들을사용하지않기때문에단위부피당용량을현저히향상시킴으로써연료전지를소형경량화할수 있다.
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公开(公告)号：KR1020120019235A
公开(公告)日：2012-03-06
申请号：KR1020100082526
申请日：2010-08-25
Applicant: 한국세라믹기술원
Abstract: PURPOSE: A manufacturing method of single-phase Cu(In,Ga)Se2(CIGS) nano-powder is provided to form a single-phase CIGS crystal structure using a seed, thereby enabling to manufacture a uniform and large scaled light absorption layer. CONSTITUTION: A manufacturing method of single-phase Cu(In,Ga)Se2(CIGS) nano-powder comprises the following steps: a step of mixing more than one of Cu, In, Ga and Se source powders with a solvent and heat-treating thereof in order to synthesize seeds which will be sources for more than one of CuGaSe2, CuInSe2, and Cu(In,Ga)Se2; and a step of mixing and heat-treating the seed with the Cu, In, Ga, and Se source powders and the solvent in order to synthesize the CIGS. In a CIGS synthesis step, the seed is either solution or powder. If the seed is solution, the molar ratio of the CIGS source powder to the solvent is from 1:100 to 1:1. If the seed is powder, the molar ratio of the seed powder to the CIGS source powder is from 1:100 to 1:1. In the CIGS synthesis step, heat-treating lasts for 0.5-48 hours at 200-250 deg. Celsius, whereas heat-treating lasts for 0.5-48 hours at 150-200 deg.Celsius in the seed synthesis step.
Abstract translation: 目的：提供单相Cu（In，Ga）Se2（CIGS）纳米粉末的制造方法，以使用种子形成单相CIGS晶体结构，从而能够制造均匀且大型的光吸收层。 构成：单相Cu（In，Ga）Se2（CIGS）纳米粉末的制造方法包括以下步骤：将一种以上Cu，In，Ga和Se源粉末与溶剂和热 - 以合成将成为CuGaSe 2，CuInSe 2和Cu（In，Ga）Se 2中多于一种的晶种的种子; 以及用Cu，In，Ga和Se源粉末和溶剂混合和热处理种子以合成CIGS的步骤。 在CIGS合成步骤中，种子是溶液或粉末。 如果种子是溶液，则CIGS源粉末与溶剂的摩尔比为1:100至1:1。 如果种子是粉末，则种子粉末与CIGS源粉末的摩尔比为1:100至1:1。 在CIGS合成步骤中，热处理在200-250度持续0.5-48小时。 而在种子合成步骤中，热处理在150-200摄氏度下持续0.5-48小时。
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Patent Agency Ranking
公开(公告)号：KR101099243B1
公开(公告)日：2011-12-27
申请号：KR1020090129211
申请日：2009-12-22
IPC: H01C7/112
Abstract: 본발명은산화아연(ZnO)을주성분으로하며, 칼슘(Ca)을함유한화합물및 마그네슘(Mg)을부성분으로포함하는것을특징으로하는 ZnO계바리스터조성물에관한것이다. 상기바리스터조성물은비선형계수, 클램핑전압비, 써어지흡수능등의면에서우수하며, 특히, BiO를포함하지않기때문에우수한 ESD(Electro-Static Discharge) 특성을제공한다. 또한, 환경규제성분인 SbO를포함하지않으므로우수한작업안전성을제공하며, 고온소결이요구되어제조원가상승을야기하는 Pr계성분을포함하지않으므로바리스터의제조단가를낮출수 있다. 특히, 본발명의바리스터조성물은작은정전용량을가지면서도낮은클램핑(clamping) 전압을가지는것이가능한특징을갖는다.
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公开(公告)号：KR1020110075762A
公开(公告)日：2011-07-06
申请号：KR1020090132305
申请日：2009-12-29
Applicant: 한국세라믹기술원
CPC classification number: H01L23/15 , B32B18/00 , B32B38/0036
Abstract: PURPOSE: A method for sintering low temperature co-fired ceramics(LTCC) is provided to prevent the sintering-shrinkage of the ceramics to the x-y axial direction by arranging restricting layers on the upper and/or the lower side of an LTCC layer. CONSTITUTION: A method for sintering an LTCC includes the following: An LTCC layer(2) and one or more restricting layers(3, 4) which form a stacked body. The restricting layers are based on alumina, zirconia, or a mixture of the same and are arranged on the upper side and/or the lower side of the LTCC layer. One or more rods are arranged on the upper side of the stacked body, and the stacked body with the rods is sintered at a temperature between 830 and 900 degrees Celsius for 20-40 minutes. The sintering temperature of the restricting layers is higher than that of the LTCC layer. The restricting layers and the rods are eliminated after the sintering process.
Abstract translation: 目的：提供一种烧结低温共烧陶瓷（LTCC）的方法，通过在LTCC层的上侧和/或下侧设置限制层来防止陶瓷烧结收缩到x-y轴向。 构成：用于烧结LTCC的方法包括以下：LTCC层（2）和形成堆叠体的一个或多个限制层（3,4）。 限制层基于氧化铝，氧化锆或其混合物，并且布置在LTCC层的上侧和/或下侧。 一个或多个杆布置在层叠体的上侧，并且具有棒的层叠体在830至900摄氏度的温度下烧结20-40分钟。 限制层的烧结温度高于LTCC层的烧结温度。 在烧结过程之后，限制层和棒被去除。
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公开(公告)号：KR1020110072333A
公开(公告)日：2011-06-29
申请号：KR1020090129211
申请日：2009-12-22
IPC: H01C7/112
Abstract: PURPOSE: A ZnO system varistor composite is provided to offer a better physical characteristic required in a varistor like a nonlinear coefficient, a clamping voltage ratio, and a surge absorption resolution. CONSTITUTION: The ZnO system varistor composite does not include Bi2O3, Sb2O3 and Pr6O11. The ZnO system varistor composite includes Ca, Mg, Co, Cr and La. The ZnO system varistor composite includes other metal atom within a range of 0.01-30 at % of the total included metal atom.
Abstract translation: 目的：提供ZnO系压敏电阻复合材料，以提供非线性系数，钳位电压比和浪涌吸收分辨率等变阻器所需的更好的物理特性。 构成：ZnO系压敏电阻复合材料不包括Bi2O3，Sb2O3和Pr6O11。 ZnO系压敏电阻复合材料包括Ca，Mg，Co，Cr和La，ZnO系压敏电阻复合材料包括在包含的金属原子总量的0.01-30at％范围内的其他金属原子。
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公开(公告)号：KR1020110022237A
公开(公告)日：2011-03-07
申请号：KR1020090079746
申请日：2009-08-27
IPC: C04B35/453 , H01C7/112 , H01C7/10
CPC classification number: H01C7/112 , C04B35/453 , C04B35/6262 , C04B35/63 , C04B2235/3224 , C04B2235/3294 , C04B2235/3298 , H01C17/06546
Abstract: PURPOSE: An ZnO-based varistor composition is provided to ensure excellent EDS(Electro-Static Discharge) property and work stability by not containing Bi2O3, Sb2O3 and Pr6O11. CONSTITUTION: An ZnO-based varistor composition includes Ca, Co, Cr and La but not Bi2O3, Sb2O3 and Pr6O11. The varistor composition comprises, based on the total metal atoms, Zn 90-98at%, Ca 0.2-10at%, Co 0.2-5at%, Cr 0.05-3at% and La 0.05-3at%. A method for preparing the ZnO-based varistor composition comprises the steps of: mixing ZnO with a component which contains Ca, Co, Cr and La but not Bi2O3, Sb2O3 and Pr6O11, and pulverizing and calcining the mixture to prepare calcined powder; adding a binder to the calcined powder, and molding and sintering them; and coating an electrode on the sintered body and packaging.
Abstract translation: 目的：提供ZnO基非线性电阻组合物，通过不含Bi2O3，Sb2O3和Pr6O11，确保优异的EDS（静电放电）性能和工作稳定性。 构成：一种ZnO基变阻器组合物包括Ca，Co，Cr和La，但不包括Bi2O3，Sb2O3和Pr6O11。 基于总金属原子，可变电阻组合物包含Zn 90-98at％，Ca 0.2-10at％，Co 0.2-5at％，Cr 0.05-3at％和La 0.05-3at％。 制备ZnO基非线性电阻组合物的方法包括以下步骤：将ZnO与含有Ca，Co，Cr和La而不是Bi 2 O 3，Sb 2 O 3和Pr 6 O 11的组分混合，并粉碎和煅烧该混合物以制备煅烧粉末; 向煅烧粉末中加入粘合剂，并成型并烧结它们; 并在烧结体上包覆电极并进行包装。
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公开(公告)号：KR1020100128362A
公开(公告)日：2010-12-08
申请号：KR1020090046725
申请日：2009-05-28
Applicant: 한국세라믹기술원
IPC: H05K3/46
Abstract: PURPOSE: A method for manufacturing a ceramic multilayered element is provided to perform a re-oxidation thermal process by preventing the exposure of the inner electrode to the outside. CONSTITUTION: A material powder is prepared(S201). A sheet is manufactured by a normal manufacturing method(S202). An inner electrode is printed with a screen print by using electrode paste on the surface of each sheet(S203). A wafer is made by stacking the sheets(S204). The wafer is sintered under the reduction atmosphere(S205). The sintered wafer recovers the ceramic material by re-treatment under the oxidation atmosphere(S206). The chip is made by cutting the wafer with a constant size(S207). The outer electrode is printed on both sides of each device. A final chip is made by forming the outer electrode at a preset temperature in air(S208).
Abstract translation: 目的：提供一种制造陶瓷多层元件的方法，以通过防止内部电极暴露于外部来进行再氧化热处理。 构成：准备材料粉末（S201）。 通过正常的制造方法制造片材（S202）。 通过在每个片材的表面上使用电极膏将内部电极印刷丝网印刷（S203）。 通过层叠片材制作晶片（S204）。 在还原气氛下烧结晶片（S205）。 烧结晶片通过在氧化气氛下再处理回收陶瓷材料（S206）。 芯片通过以恒定尺寸切割晶片制成（S207）。 外部电极印刷在每个设备的两侧。 通过在空气中将预定温度形成外部电极来制造最终的芯片（S208）。
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