公开(公告)号：EP1961039A1

公开(公告)日：2008-08-27

申请号：EP06827818.3

申请日：2006-11-15

Applicant: Advanced Micro Devices, Inc.

Inventor： HOENTSCHEL, Jan ,  WEI, Andy ,  HEINZE, Mario ,  JAVORKA, Peter

IPC: H01L21/336 ,  H01L21/265

CPC classification number: H01L21/26586 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1033 ,  H01L29/1054 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7848

Abstract: By performing a tilted amorphization implantation (208, 308P, 308N) and a subsequent re-crystallization on the basis of a stressed overlying material (209, 211, 309, 311, 319S), a highly efficient strain-inducing mechanism is provided. The tilted amorphization implantation (208, 308P, 308N) may result in a significantly reduced defect rate during the re-crystallization process, thereby substantially reducing leakage currents in sophisticated transistor elements (200, 300N, 300P).