公开(公告)号：US10041166B2

公开(公告)日：2018-08-07

申请号：US15795768

申请日：2017-10-27

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20170154806A1

公开(公告)日：2017-06-01

申请号：US15432263

申请日：2017-02-14

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/7685 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/283 ,  H01L21/31122 ,  H01L21/31144 ,  H01L23/53266

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20170040164A1

公开(公告)日：2017-02-09

申请号：US14819274

申请日：2015-08-05

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/283

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

Abstract translation: 提供了用于相对于同一衬底的第二电介质表面在衬底的第一导电表面上选择性地沉积含Al和N的材料的方法。 在一些方面，提供了形成用于集成电路制造中的含有Al和N的保护层或蚀刻停止层的方法。

公开(公告)号：US20250069885A1

公开(公告)日：2025-02-27

申请号：US18946444

申请日：2024-11-13

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US12170197B2

公开(公告)日：2024-12-17

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/56 ,  H01L21/67 ,  H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20240186138A1

公开(公告)日：2024-06-06

申请号：US18440452

申请日：2024-02-13

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Delphine Longrie ,  Peng-Fu Hsu

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20240047197A1

公开(公告)日：2024-02-08

申请号：US18491428

申请日：2023-10-20

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213 ,  H01L21/02315 ,  H01L21/02068 ,  H01L21/02178 ,  H01L21/02118

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US11830732B2

公开(公告)日：2023-11-28

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02315 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20230015724A1

公开(公告)日：2023-01-19

申请号：US17943336

申请日：2022-09-13

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Delphine Longrie ,  Peng-Fu Hsu

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20210175092A1

公开(公告)日：2021-06-10

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/56 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/32 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.