公开(公告)号：US20230088313A1

公开(公告)日：2023-03-23

申请号：US17948674

申请日：2022-09-20

Applicant: ASM IP Holding, B.V.

Inventor： Herbert Terhorst ,  Dinkar Nandwana ,  Eric Shero ,  Allen D'Ambra ,  Jessica Akemi Cimada da Silva ,  Daner Abdula

IPC: B05B1/00 ,  B05B1/18

Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.

公开(公告)号：US20230002889A1

公开(公告)日：2023-01-05

申请号：US17850141

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Arjen Klaver ,  Lucian Jdira ,  Marina Mariano ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Bert Jongbloed ,  Subir Parui

IPC: C23C16/30 ,  C23C16/54 ,  C23C16/52

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

公开(公告)号：US20220412652A1

公开(公告)日：2022-12-29

申请号：US17844911

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G.M. Oosterlaken ,  Lucian Jdira ,  Herbert Terhorst

IPC: F27B5/04 ,  F27D1/18 ,  F27D3/00 ,  F27B5/16 ,  F27B5/18 ,  F27B5/10

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

公开(公告)号：US20220380895A1

公开(公告)日：2022-12-01

申请号：US17816052

申请日：2022-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Raj Singu ,  Todd Robert Dunn ,  Carl Louis White ,  Herbert Terhorst ,  Eric James Shero ,  Bhushan Zope

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/687

Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

公开(公告)号：US10683571B2

公开(公告)日：2020-06-16

申请号：US14188760

申请日：2014-02-25

Applicant: ASM IP Holding B.V.

Inventor： Lucian C. Jdira ,  Herbert Terhorst ,  Michael Halpin ,  Carl White ,  Todd Robert Dunn ,  Eric Shero ,  Melvin Verbass ,  Christopher Wuester ,  Kyle Fondurulia

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32

Abstract: A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

公开(公告)号：US20200056286A1

公开(公告)日：2020-02-20

申请号：US16598768

申请日：2019-10-10

Applicant: ASM IP HOLDING, B.V.

Inventor： Eric James Shero ,  Mohith E. Verghese ,  Carl Louis White ,  Herbert Terhorst ,  Dan Maurice

IPC: C23C16/455 ,  H01L21/02

Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

公开(公告)号：US20170011910A1

公开(公告)日：2017-01-12

申请号：US15240141

申请日：2016-08-18

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Dieter Pierreux ,  Cornelius A. van der Jeugd ,  Herbert Terhorst ,  Lucian Jdira ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L21/02337 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02233 ,  H01L21/02274

Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

Abstract translation: 在一些实施方案中，反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中，其中处理室中的压力为约300托或更小。 在一些实施方案中，过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料，并且可以提供高度均匀的固化结果，例如在批处理室中固化的一批半导体衬底。

公开(公告)号：US20160289828A1

公开(公告)日：2016-10-06

申请号：US15182504

申请日：2016-06-14

Applicant: ASM IP HOLDING, B.V.

Inventor： Eric James Shero ,  Mohith E. Verghese ,  Carl Louis White ,  Herbert Terhorst ,  Dan Mourice

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45502 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45591 ,  H01L21/0228 ,  Y10T137/85938

Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Abstract translation: 一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。 扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。