公开(公告)号：US12215416B2

公开(公告)日：2025-02-04

申请号：US18387914

申请日：2023-11-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20240068092A1

公开(公告)日：2024-02-29

申请号：US18387914

申请日：2023-11-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

CPC classification number: C23C16/34 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  G11C5/063 ,  H01L21/28088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/7851 ,  H01L29/78696 ,  H10B12/053 ,  H10B12/34 ,  H10B12/488

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20220186364A1

公开(公告)日：2022-06-16

申请号：US17688258

申请日：2022-03-07

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  H01L27/108 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US11295980B2

公开(公告)日：2022-04-05

申请号：US16105802

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20210407809A1

公开(公告)日：2021-12-30

申请号：US17353262

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Bhushan Zope ,  Eric Christopher Stevens ,  Shankar Swaminathan ,  Eric James Shero ,  Robert Brennan Milligan

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/08 ,  C23C16/455

Abstract: Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

公开(公告)号：US11114294B2

公开(公告)日：2021-09-07

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C28/04 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

公开(公告)号：US20210087679A1

公开(公告)日：2021-03-25

申请号：US17014820

申请日：2020-09-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US20190067014A1

公开(公告)日：2019-02-28

申请号：US16105761

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Kiran Shrestha ,  Bhushan Zope ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/285 ,  H01L21/3213 ,  H01L23/532 ,  C23C16/14 ,  C23C16/455

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and partially filling the one or more gap features with a molybdenum metal film by a cyclical deposition-etch process, wherein a unit cycle of the cyclical deposition-etch process comprises: partially filling the one or more gap features with a molybdenum metal film by a performing at least one unit cycle of a first cyclical deposition process; and partially etching the molybdenum metal film. The methods may also include: filling the one or more gap features with molybdenum metal film by performing at least one unit cycle of a second cyclical deposition process. Semiconductor device structures including a gap fill molybdenum metal film disposed in one or more gap features in or on a surface of a substrate formed by the methods of the disclosure are also disclosed.