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31.发明授权公开(公告)号：US11650047B2
公开(公告)日：2023-05-16
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
CPC classification number: G01B11/2536 , G02B27/4233 , G02B27/4272 , G03F7/705 , G03F7/7065 , G03F7/7085 , G03F7/70508 , G03F7/70633 , G03H1/0005 , G03H1/0443 , G03H2001/0445
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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公开(公告)号：US10811323B2
公开(公告)日：2020-10-20
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Maria Isabel De La Fuente Valentin , Koen Van Witteveen , Martijn Maria Zaal , Shu-jin Wang
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US10571363B2
公开(公告)日：2020-02-25
申请号：US16253338
申请日：2019-01-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Mariya Vyacheslavivna Medvedyeva , Anagnostis Tsiatmas , Hugo Augustinus Joseph Cramer , Martinus Hubertus Maria Van Weert , Bastiaan Onne Fagginger Auer , Xiaoxin Shang , Johan Maria Van Boxmeer , Bert Verstraeten
Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.
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公开(公告)号：US10453758B2
公开(公告)日：2019-10-22
申请号：US15445522
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US09964853B2
公开(公告)日：2018-05-08
申请号：US14648445
申请日：2013-11-22
Applicant: ASML Netherlands B.V.
Inventor： Peter Clement Paul Vanoppen , Eric Jos Anton Brouwer , Hugo Augustinus Joseph Cramer , Jan Hendrik Den Besten , Adrianus Franciscus Petrus Engelen , Paul Christiaan Hinnen
CPC classification number: G03F7/70058 , G01N21/4738 , G03F7/70558 , G03F7/70625 , G03F7/70641 , G03F7/70683
Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.
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Patent Agency Ranking
公开(公告)号：US20170255736A1
公开(公告)日：2017-09-07
申请号：US15445478
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F17/50
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US20170176869A1
公开(公告)日：2017-06-22
申请号：US15377979
申请日：2016-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Remco Dirks , Seyed Iman Mossavat , Hugo Augustinus Joseph Cramer
CPC classification number: G03F7/70508 , G03F7/70533 , G03F7/70633 , G03F7/70641 , G06F17/5081
Abstract: A method including determining one or more statistical features from data obtained from a lithography process, a lithography apparatus, a substrate processed by the lithography process or the lithography apparatus, wherein determining the one or more statistical features does not include reconstructing a characteristic of the lithography process, of the lithography apparatus, or of the substrate.
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38.发明授权Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method 有权检验仪器，光刻设备，平版印刷加工电池及检验方法公开(公告)号：US09128065B2
公开(公告)日：2015-09-08
申请号：US14242225
申请日：2014-04-01
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Antoine Gaston Marie Kiers , Henricus Petrus Maria Pellemans
IPC: G01B11/00 , G01N21/86 , G03B27/32 , G03B27/42 , G03B27/54 , G03B27/74 , G01N21/956 , G03F9/00 , G01J3/18 , G01J3/28 , G01J3/44 , G01N21/47 , G01N21/95 , G03F7/20
CPC classification number: G01N21/956 , G01J3/18 , G01J3/2803 , G01J3/4412 , G01N21/4788 , G01N21/9501 , G03F7/70191 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7088 , G03F9/7092
Abstract: For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.
Abstract translation: 对于角度分辨光谱法，使用具有具有四个象限的照明轮廓的辐射束。 第一和第三象限被照亮，而第二和第四象限不被照亮。 因此，所得到的光瞳面也被分成四个象限，仅在第一和第三象限中出现零级衍射图案，并且仅在第二和第三象限中出现一级衍射图案。
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39.发明申请Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method 有权检验仪器，平版印刷设备，平版印刷加工单元及检验方法公开(公告)号：US20140211185A1
公开(公告)日：2014-07-31
申请号：US14242225
申请日：2014-04-01
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Antoine Gaston Marie Kiers , Henricus Petrus Maria Pellemans
IPC: G01N21/956 , G03F7/20
CPC classification number: G01N21/956 , G01J3/18 , G01J3/2803 , G01J3/4412 , G01N21/4788 , G01N21/9501 , G03F7/70191 , G03F7/70633 , G03F9/7049 , G03F9/7065 , G03F9/7088 , G03F9/7092
Abstract: For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.
Abstract translation: 对于角度分辨光谱法，使用具有具有四个象限的照明轮廓的辐射束。 第一和第三象限被照亮，而第二和第四象限不被照亮。 因此，所得到的光瞳面也被分成四个象限，仅在第一和第三象限中出现零级衍射图案，并且仅在第二和第三象限中出现一级衍射图案。
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公开(公告)号：US11784098B2
公开(公告)日：2023-10-10
申请号：US17408043
申请日：2021-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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