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公开(公告)号：US11733610B2
公开(公告)日：2023-08-22
申请号：US16722557
申请日：2019-12-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Mark John Maslow , Frank Staals , Paul Christiaan Hinnen
CPC classification number: G03F7/2043 , G03F7/705 , G03F7/70616 , G03F7/70625 , G03F7/70633 , H01L22/12 , H01L22/20
Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
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公开(公告)号：US11101184B2
公开(公告)日：2021-08-24
申请号：US16572751
申请日：2019-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US10732514B2
公开(公告)日：2020-08-04
申请号：US16264755
申请日：2019-02-01
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.
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公开(公告)号：US20190155173A1
公开(公告)日：2019-05-23
申请号：US16178638
申请日：2018-11-02
Applicant: ASML Netherlands B.V.
Inventor： Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard Mc Namara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US10133191B2
公开(公告)日：2018-11-20
申请号：US15325716
申请日：2015-07-15
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo Tel , Frank Staals , Paul Christiaan Hinnen , Reiner Maria Jungblut
Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.
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Patent Agency Ranking
公开(公告)号：US11604419B2
公开(公告)日：2023-03-14
申请号：US17241142
申请日：2021-04-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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公开(公告)号：US11520239B2
公开(公告)日：2022-12-06
申请号：US16075696
申请日：2017-02-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Frank Staals , Mark John Maslow , Roy Anunciado , Marinus Jochemsen , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Paul Christiaan Hinnen
IPC: G03F7/20
Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
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公开(公告)号：US11385553B2
公开(公告)日：2022-07-12
申请号：US17306670
申请日：2021-05-03
Applicant: ASML Netherlands B.V.
Inventor： Zili Zhou , Nitesh Pandey , Olger Victor Zwier , Patrick Warnaar , Maurits Van Der Schaar , Elliott Gerard McNamara , Arie Jeffrey Den Boef , Paul Christiaan Hinnen , Murat Bozkurt , Joost Jeroen Ottens , Kaustuve Bhattacharyya , Michael Kubis
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US11314174B2
公开(公告)日：2022-04-26
申请号：US16645672
申请日：2018-08-03
Applicant: ASML Netherlands B.V.
Inventor： Laurentius Cornelius De Winter , Roland Pieter Stolk , Frank Staals , Anton Bernhard Van Oosten , Paul Christiaan Hinnen , Marinus Jochemsen , Thomas Theeuwes , Eelco Van Setten
Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
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公开(公告)号：US11145557B2
公开(公告)日：2021-10-12
申请号：US16790809
申请日：2020-02-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F30/392 , H01L21/66 , G03F7/20 , G03F9/00 , G01N21/95
Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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