公开(公告)号：EP3611567A2

公开(公告)日：2020-02-19

申请号：EP19194215.0

申请日：2019-08-29

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  CRAMER, Hugo, Augustinus Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：EP3401733A1

公开(公告)日：2018-11-14

申请号：EP17169918.4

申请日：2017-05-08

Applicant: ASML Netherlands B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus Johan ,  HAJIAHMADI, Mohammadreza

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70616

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：EP4394851A1

公开(公告)日：2024-07-03

申请号：EP22217347.8

申请日：2022-12-30

Applicant: ASML Netherlands B.V.

Inventor： PARAYIL VENUGOPALAN, Syam ,  WARNAAR, Patrick ,  DE JAGER, Pieter, Willem, Herman ,  JANSEN, Bas ,  JANSSENS, Stef, Marten, Johan

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67144 ,  H01L21/67259 ,  H01L21/67721

Abstract: An apparatus for die placement comprising a first stage comprising a plurality of recesses, the plurality of recesses configured to accept a plurality of donor dies; a second stage comprising a support for one or more targets; and a measurement system, functionally coupled to the first stage, and configured to: obtain locations of the plurality of donor dies in the plurality of recesses of the first stage, and based at least on the obtained locations, provide output signals to adjust the locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets, and based at least in part on the adjusted locations, provide output signals to place the plurality of donor dies on the one or more targets supported by the second stage by relative movement between the first stage and the second stage.

公开(公告)号：EP4104017A1

公开(公告)日：2022-12-21

申请号：EP21700597.4

申请日：2021-01-19

Applicant: ASML Netherlands B.V.

Inventor： HUBAUX, Arnaud ,  WARNAAR, Patrick ,  MIDDLEBROOKS, Scott, Anderson ,  COLLIGNON, Tijmen, Pieter ,  LI, Chung-Hsun ,  TSIROGIANNIS, Georgios ,  SHAKERI, Sayyed, Mojtaba

IPC: G03F7/20

公开(公告)号：EP3688529A1

公开(公告)日：2020-08-05

申请号：EP18759092.2

申请日：2018-08-22

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim Tjibbo ,  MASLOW, Mark John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon Hendrik Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

公开(公告)号：EP4279994A1

公开(公告)日：2023-11-22

申请号：EP22174619.1

申请日：2022-05-20

Applicant: ASML Netherlands B.V.

Inventor： WARNAAR, Patrick ,  ZHOU, Zili

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/95 ,  G01N21/956

Abstract: Disclosed is an illumination module for a metrology device. The illumination module comprises a configurable illumination module operable to provide measurement illumination over a configurable range of illumination angles, a grating light valve module (GLV) for controllably configuring a spectral configuration of the measurement illumination; and a controller operable to control the configurable illumination module and the grating light valve module such that the spectral configuration of the measurement illumination is varied in dependence with illumination angle within the range of illumination angles so as to obtain a desired detection condition for detection of diffracted radiation from a diffractive structure resultant from a measurement of the diffractive structure using the measurement illumination.

公开(公告)号：EP3611567A3

公开(公告)日：2020-05-13

申请号：EP19194215.0

申请日：2019-08-29

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  CRAMER, Hugo, Augustinus Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00 ,  G03F7/20 ,  G03F1/42

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：EP3336607A1

公开(公告)日：2018-06-20

申请号：EP16204764.1

申请日：2016-12-16

Applicant: ASML Netherlands B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik Johan ,  CALADO, Victor Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G01N21/47 ,  G03F7/70633

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising:
measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and
determining R property values using Q equations and the N*W t measurement values, where R t ;
wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.

公开(公告)号：EP4235305A1

公开(公告)日：2023-08-30

申请号：EP23171216.7

申请日：2018-08-22

Applicant: ASML Netherlands B.V.

Inventor： ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  MASLOW, Mark, John ,  SLACHTER, Abraham ,  STAALS, Frank ,  TEL, Wim, Tjibbo ,  VAN GORP, Simon, Hendrik, Celine ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：EP3876037A1

公开(公告)日：2021-09-08

申请号：EP20161488.0

申请日：2020-03-06

Applicant: ASML Netherlands B.V.

Inventor： TINNEMANS, Patricius Aloysius Jacobus ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956

Abstract: Disclosed is a method of measuring a periodic structure on a substrate and associated metrology tools therefor. The method comprises configuring an illumination numerical aperture profile and/or orientation of the periodic structure for a measurement based on a detection numerical aperture profile and a ratio of target pitch and said illumination wavelength such that at least a pair of complementary diffraction orders are captured within the detection numerical aperture profile; and measuring the periodic structure using the configured illumination numerical aperture profile and/or orientation of the periodic structure.