公开(公告)号：WO2020193010A1

公开(公告)日：2020-10-01

申请号：PCT/EP2020/054073

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN GORP, Simon, Hendrik, Celine

IPC: G03F7/20

Abstract: Disclosed is a method for configuring an apparatus for providing structures to a layer on a substrate, the method comprising: obtaining first data comprising substrate specific data as measured and/or modeled before the providing of the structures to the layer on the substrate; and determining a configuration of the apparatus for at least two different control regimes based on said first data and the use of a common merit function comprising parameters associated with the at least two control regimes.

公开(公告)号：WO2016128190A1

公开(公告)日：2016-08-18

申请号：PCT/EP2016/051074

申请日：2016-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  STAALS, Frank ,  PRENTICE, Christopher ,  DEPRE, Laurent, Michel, Marcel ,  BELTMAN, Johannes, Marcus, Maria ,  WERKMAN, Roy ,  WILDENBERG, Jochem, Sebastiaan ,  MOS, Everhardus, Cornelis

IPC: G03F1/36 ,  G03F1/70

CPC classification number: G03F1/70 ,  G03F1/22 ,  G03F1/36 ,  G06T7/0006 ,  G06T2207/30148

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

Abstract translation: 一种方法包括确定用于光刻成像系统的基板的地形信息，基于地形信息确定或估计平版印刷成像系统的图像场中的多个点的成像误差信息，使设计适于 基于成像误差信息的图案形成装置。 在一个实施例中，基于用于光刻成像系统的图像场中的多个点的成像误差信息优化用于度量目标的多个位置，其中所述优化涉及最小化描述成像误差信息的成本函数。 在一个实施例中，基于图像场的成像要求的差异对位置进行加权。

公开(公告)号：WO2008136666A2

公开(公告)日：2008-11-13

申请号：PCT/NL2008/050264

申请日：2008-04-29

Applicant: ASML Netherlands B.V. ,  STAALS, Frank ,  LOF, Joeri ,  LOOPSTRA, Erik, Roelof ,  TEL, Wim, Tjibbo ,  MOEST, Bearrach

Inventor： STAALS, Frank ,  LOF, Joeri ,  LOOPSTRA, Erik, Roelof ,  TEL, Wim, Tjibbo ,  MOEST, Bearrach

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/7085 ,  G03F7/70341 ,  G03F7/70483 ,  G03F9/7088

Abstract: The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens arranged to form a detection image of the aerial pattern and an image detector arranged to measure radiation intensities in a plurality of positions in the detection image.

Abstract translation: 本发明涉及一种用于检测天线图案的图像，其包括用于曝光基板的光刻设备中的辐射束的横截面中的辐射强度的空间差异。 图像传感器包括布置成形成天线图案的检测图像的透镜和布置成测量检测图像中的多个位置中的辐射强度的图像检测器。

公开(公告)号：WO2019110261A1

公开(公告)日：2019-06-13

申请号：PCT/EP2018/081297

申请日：2018-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank

IPC: G03F7/20

Abstract: Disclosed is a method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and comprises determining optimization data. The optimization data comprises measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modeled before the providing of product structures to the substrate is determined, the substrate specific metrology data comprising metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on said optimization data and the substrate specific metrology data.

公开(公告)号：WO2018233966A1

公开(公告)日：2018-12-27

申请号：PCT/EP2018/063527

申请日：2018-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： HARUTYUNYAN, Davit ,  JIA, Fei ,  STAALS, Frank ,  WANG, Fuming ,  LOOIJESTIJN, Hugo, Thomas ,  RIJNIERSE, Cornelis, Johannes ,  PISARENCO, Maxim ,  WERKMAN, Roy ,  THEEUWES, Thomas ,  VAN HEMERT, Tom ,  BASTANI, Vahid ,  WILDENBERG, Jochem, Sebastiaan ,  MOS, Everhardus, Cornelis ,  WALLERBOS, Erik, Johannes, Maria

IPC: G03F7/20 ,  G05B13/04 ,  G05B19/418 ,  H01L21/66

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method comprising: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

公开(公告)号：WO2018077651A1

公开(公告)日：2018-05-03

申请号：PCT/EP2017/076338

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： MOS, Everhardus, Cornelis ,  WILDENBERG, Jochem, Sebastiaan ,  WALLERBOS, Erik, Johannes, Maria ,  VAN DER SCHAAR, Maurits ,  STAALS, Frank ,  ELICH, Franciscus, Hendricus, Arnoldus

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method comprising: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Abstract translation: 1.一种用于改进光刻过程的产量的方法，所述方法包括：确定衬底上的性能参数的参数指纹，所述参数指纹包括与所述性能参数中的不确定性有关的信息; 确定所述衬底上的所述性能参数的处理窗口指纹，所述处理窗口与所述性能参数的可允许范围相关联; 以及确定与性能参数在可允许范围之外的概率相关联的概率度量。 可选地，基于概率度量来确定光刻过程的校正。

公开(公告)号：WO2016202674A1

公开(公告)日：2016-12-22

申请号：PCT/EP2016/063145

申请日：2016-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： WARDENIER, Peter, Hanzen ,  STAALS, Frank ,  VAESSEN, Jean-Pierre, Agnes, Henricus, Marie ,  VAN DER LAAN, Hans

IPC: G03F7/20

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

Abstract translation: 公开了一种在使用定义测量场的测量辐射测量目标之后，确定从包括多个周期性结构的目标衍射的辐射的测量值的校正的方法。 该校正用于校正测量值中的测量场位置依赖性。 该方法包括执行周期性结构的第一和第二测量; 以及从所述第一测量和所述第二测量确定校正。 执行第一测量，其中所述目标相对于测量场处于正常测量位置。 相对于测量场，位移位置中的周期性结构执行第二测量，当所述目标相对于测量场在所述正常测量位置时，所述偏移位置包括另一个所述周期性结构的位置。

公开(公告)号：WO2020002143A1

公开(公告)日：2020-01-02

申请号：PCT/EP2019/066446

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HENNERKES, Christoph, Rene, Konrad, Cebulla ,  HOWELL, Rafael C. ,  SHI, Zhan ,  LI, Xiaoyang ,  STAALS, Frank

IPC: G03F7/20

Abstract: Described herein is a method for determining a wavefront of a patterning apparatus of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model of a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movements, and a lens fingerprint of a tuning scanner (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., wavefront parameters such as tilt, offset, etc.) based on the lens fingerprint of the tuning scanner, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning scanner performance.

公开(公告)号：WO2018041513A1

公开(公告)日：2018-03-08

申请号：PCT/EP2017/069669

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  STAALS, Frank ,  HINNEN, Paul, Christiaan

IPC: G01N21/956 ,  G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more prelithography process apparatuses to the characteristic.

Abstract translation: 涉及根据一个或多个处理设备的图案化处理，通过从基板的图案化处理中移除一个或多个处理设备对基板的特性所作出的贡献 衬底的特性，光刻设备对特性的贡献以及一个或多个预光刻处理设备对特性的贡献。

公开(公告)号：WO2018010928A1

公开(公告)日：2018-01-18

申请号：PCT/EP2017/065346

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER LOGT, Léon, Maria, Albertus ,  SEGERS, Bart, Peter, Bert ,  VAN GORP, Simon, Hendrik, Celine ,  LUIJTEN, Carlo, Cornelis, Maria ,  STAALS, Frank

IPC: G03F7/20

Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

Abstract translation: 光刻工艺是将期望的图案施加到衬底上，通常施加到衬底的目标部分上的工艺。 在光刻过程中，焦点需要被控制。 公开了一种用于确定与基板相关联的性能参数的指纹的方法，例如在光刻工艺期间将使用的焦点值。 性能参数的参考指纹是针对参考基板确定的。 确定参考衬底的参考衬底参数。 确定衬底（例如具有产品结构的衬底）的衬底参数。 随后，基于参考指纹，参考衬底参数和衬底参数来确定性能参数的指纹。 指纹然后可以用来控制光刻过程。