公开(公告)号：US10699922B2

公开(公告)日：2020-06-30

申请号：US14727136

申请日：2015-06-01

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter

IPC: H01L21/67 ,  F21V8/00 ,  G02B6/00 ,  H05B3/00

Abstract: A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe array coupled to the chamber, the light pipe array comprising a wall member that defines a boundary of the interior volume of the chamber, wherein the light pipe array includes a plurality of non-metallic light pipe structures, and a radiant heat source comprising a plurality of energy sources in optical communication with each of the plurality of light pipe structures.

公开(公告)号：US10373859B2

公开(公告)日：2019-08-06

申请号：US16029159

申请日：2018-07-06

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/50

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US10128197B2

公开(公告)日：2018-11-13

申请号：US15289663

申请日：2016-10-10

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter ,  Swaminathan T. Srinivasan

IPC: H01L21/02 ,  H01L23/00 ,  H01J37/32 ,  H01L21/265 ,  H01L21/67 ,  H01L21/687 ,  H01L21/66 ,  H01L29/32 ,  H01L21/683 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3115

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. Localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

公开(公告)号：US10094618B2

公开(公告)日：2018-10-09

申请号：US15366908

申请日：2016-12-01

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Aaron Muir Hunter

IPC: F27D5/00 ,  F27D21/00 ,  H01L21/67

Abstract: A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.

公开(公告)号：US10074538B2

公开(公告)日：2018-09-11

申请号：US15186499

申请日：2016-06-19

Applicant: Applied Materials, Inc.

Inventor： Bruce E. Adams ,  Aaron Muir Hunter ,  Stephen Moffatt

IPC: C30B1/02 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/02686 ,  H01L21/02521 ,  H01L21/268

Abstract: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

公开(公告)号：US09240341B2

公开(公告)日：2016-01-19

申请号：US14674049

申请日：2015-03-31

Applicant: Applied Materials, Inc.

Inventor： Oleg Serebryanov ,  Joseph M. Ranish ,  Aaron Muir Hunter

IPC: F27D11/00 ,  H01L21/687 ,  F27B17/00 ,  H01L21/67 ,  H01L21/324 ,  H05B3/00

CPC classification number: H01L21/68764 ,  F27B17/0025 ,  F27D11/00 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68785 ,  H05B3/0047

Abstract: Embodiments of the present disclosure provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.

Abstract translation: 本公开的实施例提供了热处理室，其包括设置在基板支撑组件的相对侧上的驱动机构和加热组件。 特别地，加热组件设置在基板支撑组件下方，以处理基板，其中装置侧朝上并且驱动机构设置在基板组件上方。

公开(公告)号：US10857623B2

公开(公告)日：2020-12-08

申请号：US15838010

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/352 ,  H01L21/324 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US10727093B2

公开(公告)日：2020-07-28

申请号：US14645883

申请日：2015-03-12

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Joseph M. Ranish ,  Aaron Muir Hunter ,  Edric Tong ,  James Francis Mack ,  Kin Pong Lo ,  Errol Antonio C. Sanchez ,  Zhiyuan Ye ,  Anzhong Chang

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/687 ,  G02B6/08 ,  H05B3/00

Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

公开(公告)号：US10410890B2

公开(公告)日：2019-09-10

申请号：US14297240

申请日：2014-06-05

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter ,  Anzhong Chang

IPC: H01L21/67 ,  G02B6/00 ,  G02B6/42 ,  G02B6/08

Abstract: A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.

公开(公告)号：US10249522B2

公开(公告)日：2019-04-02

申请号：US15613906

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Hanbing Wu ,  Anantha K. Subramani ,  Wei W. Wang ,  Aaron Muir Hunter

IPC: H01L21/67 ,  H01L21/687 ,  G01J5/00 ,  G01J5/08

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.