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公开(公告)号:US11694919B2
公开(公告)日:2023-07-04
申请号:US15464519
申请日:2017-03-21
Applicant: Applied Materials, Inc.
Inventor: Dongming Iu , Mehran Behdjat
IPC: H01L21/683 , H01J37/32 , H01L21/67 , G05D7/06 , G05D16/20
CPC classification number: H01L21/6838 , G05D7/0635 , G05D16/2013 , H01J37/32009 , H01J37/3244 , H01J37/32715 , H01L21/67253 , H01L21/67259 , H01L21/67288
Abstract: Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process volume and a vacuum chuck support is disposed within the process volume. A pressure controller is disposed on a fluid flow path upstream from the vacuum chuck and a flow restrictor is disposed on the fluid flow path downstream from the vacuum chuck. Each of the pressure controller and flow restrictor are in fluid communication with a control volume of the vacuum chuck.
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公开(公告)号:US11021794B2
公开(公告)日:2021-06-01
申请号:US16011383
申请日:2018-06-18
Applicant: Applied Materials, Inc.
Inventor: Preetham Rao , Subramani Iyer , Kartik Shah , Mehran Behdjat
IPC: H05B3/68 , C23C16/458 , H01L21/687 , H01L21/67
Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.
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公开(公告)号:USD793526S1
公开(公告)日:2017-08-01
申请号:US29560663
申请日:2016-04-08
Applicant: Applied Materials, Inc.
Designer: Mehran Behdjat
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公开(公告)号:US09659809B2
公开(公告)日:2017-05-23
申请号:US15188706
申请日:2016-06-21
Applicant: Applied Materials, Inc.
Inventor: Mehran Behdjat , Aaron Muir Hunter , Joseph M. Ranish , Norman Tam , Jeffrey Tobin , Jiping Li , Martin Tran
IPC: H01L21/687 , H01L21/324 , H01L21/67
CPC classification number: H01L21/68735 , H01L21/324 , H01L21/67115 , H01L21/68757
Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.
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公开(公告)号:US08888916B2
公开(公告)日:2014-11-18
申请号:US14088013
申请日:2013-11-22
Applicant: Applied Materials, Inc.
Inventor: Ming-Kuei (Michael) Tseng , Norman L. Tam , Yoshitaka Yokota , Agus S. Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
CPC classification number: H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置,其包括限定处理体积的室主体,设置在处理容积中的衬底支撑件,其中衬底支撑件构造成支撑和旋转衬底;气体入口组件, 室主体的入口并且被配置为向处理容积提供第一气流,以及联接到室主体的出口的排气组件,其中气体入口组件和排气组件设置在室主体的相对侧上 ,并且排气组件限定了被配置为延长处理量的排气量。
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公开(公告)号:USD1066440S1
公开(公告)日:2025-03-11
申请号:US29867553
申请日:2022-10-28
Applicant: Applied Materials, Inc.
Designer: Yang Li , Xi Cen , Kai Wu , Min-Han Lee , Mehran Behdjat
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公开(公告)号:US10741428B2
公开(公告)日:2020-08-11
申请号:US15417865
申请日:2017-01-27
Applicant: Applied Materials, Inc.
Inventor: Aaron Muir Hunter , Mehran Behdjat , Niraj Merchant , Douglas R. McAllister , Dongming Iu , Kong Lung Chan , Lara Hawrylchak
IPC: H01L21/67 , C23C16/458 , C23C16/455 , C23C16/452 , C23C16/44 , H01J37/32
Abstract: A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.
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公开(公告)号:US10665476B2
公开(公告)日:2020-05-26
申请号:US14335415
申请日:2014-07-18
Applicant: Applied Materials, Inc.
Inventor: Efrain Quiles , Mehran Behdjat , Robert B. Lowrance , Michael R. Rice , Brent Vopat
IPC: H01L21/67 , H01L21/677 , H01L21/687 , F24F9/00
Abstract: In one aspect, a valve assembly adapted to seal an opening in a chamber is disclosed. Valve assembly includes a housing being adapted for coupling to a chamber surface having the opening therein, the housing including a threshold portion positioned adjacent to the chamber opening, the threshold portion having one or more inlets adapted to supply gas to an interior region of the housing adjacent to the chamber opening; and a sealing surface adapted to selectively (1) seal the opening, and (2) retract from the opening so as not to obstruct substrate passage. Numerous other system aspects are provided, as are methods and computer program products in accordance with these and other aspects.
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公开(公告)号:US10128144B2
公开(公告)日:2018-11-13
申请号:US15600336
申请日:2017-05-19
Applicant: Applied Materials, Inc.
Inventor: Mehran Behdjat , Aaron Muir Hunter , Joseph M. Ranish , Norman Tam , Jeffrey Tobin , Jiping Li , Martin Tran
IPC: H01L21/687 , H01L21/67 , H01L21/324
Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.
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公开(公告)号:US20160083840A1
公开(公告)日:2016-03-24
申请号:US14863063
申请日:2015-09-23
Applicant: Applied Materials, Inc.
Inventor: PREETHAM RAO , Subramani Iyer , Kartik Shah , Mehran Behdjat
IPC: C23C16/458 , C23C16/46
CPC classification number: C23C16/4583 , C23C16/4581 , H01L21/67098 , H01L21/68785
Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.
Abstract translation: 本文描述的实施例包括用于半导体处理的基座,其包括可以具有至少1mm的厚度的取向石墨板。 基座可以具有支撑构件,并且取向的石墨板可以设置在支撑构件上。 支撑构件可以具有中心热导管和边缘热导管,并且可以在中心热导管和边缘热导管之间基本上是固体的。
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