公开(公告)号：US10240234B2

公开(公告)日：2019-03-26

申请号：US15489306

申请日：2017-04-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Kien N. Chuc ,  Karthik Janakiraman

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/44 ,  H01L21/02

Abstract: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.

公开(公告)号：US20240387174A1

公开(公告)日：2024-11-21

申请号：US18197528

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Eswaranand Venkatasubramanian ,  Rui Cheng ,  Santhosh Kiran Rajarajan ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman ,  Guoqing Li

IPC: H01L21/033

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US12142480B2

公开(公告)日：2024-11-12

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US11939674B2

公开(公告)日：2024-03-26

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/30 ,  C23C16/38 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/303 ,  C23C16/38 ,  H01J37/32009

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11315787B2

公开(公告)日：2022-04-26

申请号：US16821759

申请日：2020-03-17

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun Yang ,  Rui Cheng ,  Karthik Janakiraman ,  Zubin Huang ,  Diwakar Kedlaya ,  Meenakshi Gupta ,  Srinivas Guggilla ,  Yung-chen Lin ,  Hidetaka Oshio ,  Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

公开(公告)号：US20220108872A1

公开(公告)日：2022-04-07

申请号：US17063366

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Diwakar Kedlaya ,  Rui Cheng ,  Truong Van Nguyen ,  Manjunath Patil ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/50 ,  C23C16/56

Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate defining a plurality of channels through an interior of the support plate. Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate. The substrate support may include a shaft coupled with the support plate. The central channel may extend through the shaft. The systems may include a fluid source coupled with the central channel of the substrate support.

公开(公告)号：US20220093371A1

公开(公告)日：2022-03-24

申请号：US17026885

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya ,  Manjunath Veerappa Chobari Patil ,  Prashant A. Desai ,  Paul L. Brillhart ,  Karthik Janakiraman ,  Pavan Kumar Murali Kumar

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

公开(公告)号：US20220020583A1

公开(公告)日：2022-01-20

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/24

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20210320027A1

公开(公告)日：2021-10-14

申请号：US16844764

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Diwakar Kedlaya ,  Satish Radhakrishnan ,  Anton V. Baryshnikov ,  Venkatanarayana Shankaramurthy ,  Karthik Janakiraman ,  Paul L. Brillhart ,  Badri N. Ramamurthi

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

公开(公告)号：US11017986B2

公开(公告)日：2021-05-25

申请号：US16001264

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

Abstract: Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.