Abstract:
Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.
Abstract:
Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Abstract:
The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocur- able polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of > = 360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.
Abstract:
A polymer comprising repeating units A and optionally repeating units B wherein Z = S, Se, N-R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1 - 4 R a groups; Y,at each occurrence, is independently a divalent C 1-6 alkyl group, a divalent C 1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.
Abstract:
Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic À-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.