公开(公告)号：EP3108033A1

公开(公告)日：2016-12-28

申请号：EP15740739.6

申请日：2015-01-27

Applicant: BYD Company Limited

Inventor： GONG, Qing ,  ZHOU, Wei ,  SUN, Yongliang

IPC: C23C18/20 ,  C23C18/31

Abstract: A method for metalizing a polymer substrate and a polymer article prepared thereof. First a polymer substrate having a base polymer and at least one metal compound dispersed in the base polymer is provided. A surface of the polymer substrate is then irradiated with an energy beam such that a water contact angle of the surface of the polymer substrate is at least 120°. And then the surface of the polymer substrate is subjected to chemical plating.

Abstract translation: 提供了用于金属化聚合物基底的方法和通过该方法制备的聚合物制品。 首先提供具有基础聚合物和分散在基础聚合物中的至少一种金属化合物的聚合物基材。 然后用能量束照射聚合物基材的表面，使得聚合物基材的表面的水接触角为至少120°。 并且聚合物基材的表面经受化学镀。

公开(公告)号：EP2817134A1

公开(公告)日：2014-12-31

申请号：EP12869418.9

申请日：2012-07-18

Applicant: Shenzhen BYD Auto R&D Company Limited ,  BYD Company Limited

Inventor： GONG, Qing ,  ZHANG, Xiong ,  ZHANG, Yihu ,  ZHOU, Wei

IPC: B29C45/14 ,  B32B15/08 ,  C23F1/16

CPC classification number: B29C45/14795 ,  B29C45/14311 ,  B29C45/14778 ,  B29C2045/14803 ,  B29C2045/14868 ,  B29K2069/00 ,  B29K2105/0005 ,  B29K2105/0088 ,  B29K2705/02 ,  B29K2715/003 ,  B29K2995/0097 ,  B29L2009/003 ,  B32B15/08 ,  B32B27/32 ,  B32B27/365 ,  B32B2270/00 ,  B32B2311/24 ,  B32B2311/30 ,  B32B2369/00 ,  B32B2509/00 ,  B32B2605/08 ,  C25D11/08 ,  C25D11/16 ,  C25D11/24 ,  C25D11/30 ,  C25D11/34 ,  Y10T428/24545 ,  Y10T428/31507

Abstract: A method for integrally molding a metal and a resin and a metal-resin composite structure obtainable by the same are provided. The method comprises forming a nanopore in a surface of a metal sheet; melting a thermoplastic resin on the surface of the metal sheet formed with the nanopore; and injection molding the thermoplastic resin onto the surface of the metal sheet. The thermoplastic resin includes a mixture of a main resin and a polyolefin resin, the main resin is a polycarbonate, and the polyolefin resin has a melting point of about 65° C. to about 105° C.

公开(公告)号：EP4175425A1

公开(公告)日：2023-05-03

申请号：EP21831763.4

申请日：2021-06-28

Applicant: BYD Company Limited

Inventor： ZHOU, Wei ,  XU, Qiang ,  XIE, Caicai

IPC: H05K3/02 ,  C04B37/02

Abstract: A method for preparing a ceramic copper clad laminate is provided, including following steps: providing a copper material; forming a copper oxide layer on a surface of the copper material; thermally treating the copper material on which the copper oxide layer is formed, to diffuse oxygen atoms in the copper material; removing the copper oxide layer on the thermally treated copper material; and soldering the copper-oxide-layer-removed copper material to a ceramic substrate to obtain a ceramic copper clad laminate.

公开(公告)号：EP4166869A1

公开(公告)日：2023-04-19

申请号：EP21827078.3

申请日：2021-06-07

Applicant: BYD Company Limited

Inventor： LI, Yonghui ,  LI, Junqiao ,  ZHOU, Wei

IPC: F25B21/02

Abstract: A semiconductor refrigeration chip and a method for manufacturing same are provided. The method includes: providing a semiconductor refrigeration assembly, where the semiconductor refrigeration assembly includes a first insulating and heat-conducting layer and a second insulating and heat-conducting layer provided opposite to each other and a semiconductor layer arranged between the first insulating and heat-conducting layer and the second insulating and heat-conducting layer, a side of the semiconductor refrigeration assembly provided with the first insulating and heat-conducting layer is a cold end, and a side of the semiconductor refrigeration assembly provided with the second insulating and heat-conducting layer is a hot end; and forming a packaging structure, and causing the packaging structure to cover a side wall of the semiconductor refrigeration assembly and define a first groove with the first insulating and heat-conducting layer, to obtain the semiconductor refrigeration chip.

公开(公告)号：EP3108034B1

公开(公告)日：2019-10-30

申请号：EP15740539.0

申请日：2015-01-27

Applicant: BYD Company Limited

Inventor： GONG, Qing ,  ZHOU, Wei ,  SUN, Yongliang

IPC: C23C18/30 ,  C23C18/31 ,  C23C18/38 ,  C08K3/20 ,  C23C18/16

公开(公告)号：EP3108035B1

公开(公告)日：2019-10-16

申请号：EP15740215.7

申请日：2015-01-27

Applicant: BYD Company Limited

Inventor： GONG, Qing ,  ZHOU, Wei ,  SUN, Yongliang

IPC: C23C18/38 ,  C23C18/20 ,  C23C18/31 ,  C23C18/16 ,  C08K3/32

公开(公告)号：EP3108033B1

公开(公告)日：2019-10-16

申请号：EP15740739.6

申请日：2015-01-27

Applicant: BYD Company Limited

Inventor： GONG, Qing ,  ZHOU, Wei ,  SUN, Yongliang

IPC: C23C18/20 ,  C23C18/31 ,  C08K3/20

公开(公告)号：EP2981507B1

公开(公告)日：2018-06-20

申请号：EP14778389.8

申请日：2014-04-02

Applicant: BYD Company Limited

Inventor： GONG, Qing ,  ZHOU, Wei ,  MAO, Bifeng ,  MIAO, Weifeng

IPC: C09D11/02 ,  H01B5/14 ,  B01J37/04 ,  C23C18/16 ,  C23C18/20 ,  H05K3/18 ,  C23C18/18 ,  C01G37/00 ,  C01G39/00 ,  C01G49/00 ,  C01G15/00 ,  C09D11/10 ,  C09D11/322 ,  B01J37/08 ,  B01J23/00 ,  B01J23/887 ,  B01J35/02 ,  B01J23/825 ,  B01J37/34 ,  B01J31/06 ,  B01J23/86

CPC classification number: C09D11/322 ,  B01J23/002 ,  B01J23/825 ,  B01J23/868 ,  B01J23/8874 ,  B01J23/8878 ,  B01J31/06 ,  B01J35/023 ,  B01J37/0036 ,  B01J37/04 ,  B01J37/08 ,  B01J37/349 ,  B01J2523/00 ,  C01G15/006 ,  C01G37/006 ,  C01G39/006 ,  C01G49/009 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/60 ,  C01P2006/80 ,  C09D11/10 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/1641 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1879 ,  C23C18/204 ,  C23C18/206 ,  H05K3/182 ,  H05K3/185 ,  H05K2201/0236 ,  H05K2201/09118 ,  H05K2203/0709 ,  H05K2203/107 ,  H05K2203/1131 ,  H05K2203/125 ,  B01J2523/17 ,  B01J2523/31 ,  B01J2523/67 ,  B01J2523/32 ,  B01J2523/842 ,  B01J2523/33 ,  B01J2523/68

Abstract: The present disclosure provides a metal compound. The metal compound is represented by a formula (I): Cu2AαB2-αO4-β (I). A contains at least one element selected from the groups 6 and 8 of the periodic table. B contains at least one element selected from the group 13 of the periodic table, 0

公开(公告)号：EP2951134B1

公开(公告)日：2018-01-24

申请号：EP14746818.5

申请日：2014-01-24

Applicant: BYD Company Limited

Inventor： ZHAO, Yanshuai ,  ZHOU, Wei

IPC: C04B35/468 ,  C04B35/622 ,  C01G23/00 ,  C04B35/626 ,  C04B35/462 ,  C04B35/64 ,  C04B35/634 ,  H01C7/00 ,  H01C7/02 ,  H01C17/065 ,  C04B35/653

CPC classification number: H01C7/023 ,  C01G23/006 ,  C04B35/462 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/62685 ,  C04B35/62695 ,  C04B35/63416 ,  C04B35/64 ,  C04B35/653 ,  C04B2235/32 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/34 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/449 ,  C04B2235/5427 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/785 ,  H01C7/008 ,  H01C7/025 ,  H01C17/06533

Abstract: A thermistor material and a method for preparing a thermistor material are provided. The thermistor material is prepared by mixing and heating a mixture containing BaTiO3, B2O3, SiO2, Li2O, P2O5, Cs2O, Nd2O3, Al2O3 and TiO2.

公开(公告)号：EP3188908A1

公开(公告)日：2017-07-12

申请号：EP15838426.3

申请日：2015-06-05

Applicant: BYD Company Limited

Inventor： ZHOU, Wei ,  MAO, Bifeng

IPC: B32B27/06 ,  B32B27/16 ,  B32B15/08 ,  C23C18/20

CPC classification number: C23C18/1612 ,  B01J23/20 ,  B01J35/0013 ,  B01J35/026 ,  B01J37/0072 ,  B01J37/08 ,  C08K3/22 ,  C08K9/02 ,  C08K2003/2231 ,  C08L77/06 ,  C09D11/03 ,  C09D11/10 ,  C09D11/102 ,  C09D11/322 ,  C09D11/38 ,  C09D11/52 ,  C09D167/02 ,  C09D169/00 ,  C09D177/10 ,  C23C18/1608 ,  C23C18/1633 ,  C23C18/1641 ,  C23C18/1646 ,  C23C18/1653 ,  C23C18/1655 ,  C23C18/1893 ,  C23C18/20 ,  C23C18/204 ,  C23C18/2066 ,  C23C18/40 ,  C25D3/12 ,  H05K3/182 ,  H05K3/185 ,  H05K2201/0236 ,  H05K2203/0709 ,  H05K2203/107

Abstract: Provided is a doped tin oxide that can be used as a chemical plating promoter in a method for selectively metallizing a surface of an insulating substrate. Also provided are a polymer composition that includes the doped tin oxide, a polymer molded body, an ink composition, and a method for selectively metallizing a surface of an insulating substrate. The doped tin oxide has a light color, and does not interfere with the color of the substrate while presetting thereof. The doped tin oxide has a strong ability of promoting chemical plating. Using the disclosed doped tin oxide as a chemical plating promoter, a continuous metal layer can be formed with a high plating speed, together with enhanced adhesivity between the metal layer and the insulating substrate.

Abstract translation: 提供一种掺杂的氧化锡，其可以在用于选择性地金属化绝缘基板的表面的方法中用作化学镀敷促进剂。 还提供了一种聚合物组合物，其包含掺杂的氧化锡，聚合物成型体，油墨组合物以及用于选择性地金属化绝缘基板表面的方法。 掺杂的氧化锡具有浅色，并且在其预设时不干扰衬底的颜色。 掺杂的氧化锡具有很强的促进化学镀的能力。 使用所公开的掺杂氧化锡作为化学镀促进剂，可以以高镀速形成连续金属层，同时增强金属层和绝缘基板之间的粘合性。