公开(公告)号：JPH09283423A

公开(公告)日：1997-10-31

申请号：JP11206196

申请日：1996-04-09

Applicant: CANON KK

Inventor： MIYAZAKI KYOICHI ,  HASEGAWA MASANORI ,  YOSHII MINORU

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To cope with a change of a projection optical system by a method wherein a forces detection light is radiated to a body via a projection optical system, a focus state is detected according to a generation state of an astigmatism of a focus detection light and a focus state is controlled. SOLUTION: A focus detection light 14 incident on an exposure lens 8 is condensed on a position which is slid slightly horizontally from a position on a wafer 11 in which a pattern image on a reticle 9 is formed by an irradiation light 13. For example, when a wafer stage 12 moves rightweardly, the focus detection light 14 is condensed more leftwardly than an image formation position by an irradiation light 13. When a face of the wafer 11 is not in an image formation position by the irradiation light 13, namely out of focus, a wafer stage 12 is driven to a Z direction (to a vertical direction) of an optical axis of an exposure lens 8 to be focused, Further, even when an angle of the face of wafer 11 is judge to be slid from a specific angle by the focus detection light 14, the wafer 11 is tilt-driven by the wafer stage 12 in a same manner as correction in a vertical direction.

公开(公告)号：JPH09283422A

公开(公告)日：1997-10-31

申请号：JP11205996

申请日：1996-04-09

Applicant: CANON KK

Inventor： MIYAZAKI KYOICHI ,  HASEGAWA MASANORI ,  YOSHII MINORU

IPC: G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To keep a stable exposure state by a method wherein a lens barrel of an image formation optical system from a reference position and a position of an autoforcus detection optical system are measured and corrected so as to hold two measured values at the specific relationship. SOLUTION: A sensor 13 for measuring a displacement of a flood system 4 of an artifices optical system and a sensor 14 for measuring a displacement of an exposure optical system lens barrel 1 are fitted to a common base member 15. Values measured by these displacement sensor 13, 14 are respectively supplied to a signal process part 16, and a difference L3 between a distance L2 and a distance L1 calculated. Further, a value of a difference L4 between the distance L2 and the distance L1 under a state that a pint position 17 of an exposure light 12 corresponds to a condensing position 18 of a projected light 10 has previously been stored in the signal process part 16. The signal process part 16 compares a distance L3 with a distance L4, and for example, if L3>L4, a value of L3 is corrected so as to conform to a value of L4. Therefore, by moving a rotation stage 6, the projected light 10 is shifted upwardly.

公开(公告)号：JPH09246171A

公开(公告)日：1997-09-19

申请号：JP7312296

申请日：1996-03-05

Applicant: CANON KK

Inventor： MIYAZAKI KYOICHI ,  HASEGAWA MASANORI ,  YOSHII MINORU

IPC: G03F7/207 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To eliminate the deviation of the positions of converged points of exposure light and autofocus light for a long period of time by previously giving the residual stress to cancel the relative aging deformation of an exposure optical system and autofocus system to one of a plurality of mounting members. SOLUTION: An exposure lens 1 and an autofocus system 2 are fixed by a mounting member 3, and elements 4, 5 for constituting the lens 1 and a system 2 are fixed to the member 3. And, to execute aging change of the element 5, a tensile residual stress is previously given to the surface of the element 5 so as to contract as time goes. Thus, the deviation of the positions of converged points of exposure light and the light of the system 2 can be eliminated for a long period of time.

公开(公告)号：JPH07130640A

公开(公告)日：1995-05-19

申请号：JP29391393

申请日：1993-10-29

Applicant: CANON KK

Inventor： HORYU SAKAE ,  HASEGAWA MASANORI

IPC: G01B11/00 ,  G01B11/14 ,  G03F9/00 ,  H01L21/027

Abstract: PURPOSE:To detect the positions of a mask and a wafer with high precision, by obtaining the relative position deviation of a mask and a wafer in a plane, and simultaneously obtaining the interval and the deviation amount of a light casting means and the mask. CONSTITUTION:The interval of a mask 1 and a wafer 2 is (g), and the position deviation amount is (w). The position deviation amount of a light casting means and the mask 1, which are arranged so as to face each other, is known. Position data Y from a detection means are previously obtained concerning various cases, and a multiple regression formula is obtained and stored in a recording means. When both positions are practically detected, the position data from the detection means and the general formula recorded in the recording means are used, and the relative position detection is performed with high precision, while the influence of error factors such as aberration and manufacture error of a detection system and change of oscillation wavelength of a semiconductor laser with time are excluded. Thereby a position detector of high precision can be realized.

公开(公告)号：JPH05226215A

公开(公告)日：1993-09-03

申请号：JP5975192

申请日：1992-02-14

Applicant: CANON KK

Inventor： NOSE TETSUSHI ,  HASEGAWA MASANORI

IPC: G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To detect the face interval between a first object and a second object by a method wherein a first light flux and a second light flux are made obliquely incident on the second object, they are condensed and polarized, a third light flux and a fourth light flux are made obliquely incident on the second object, they are radiated and polarized and the interval between incident positions of the first and second light fluxes and the interval between incident positions of the third and fourth light fluxes are used. CONSTITUTION:Two measuring systems are installed in such a way that they are in a symmetrically turned-down relationship with respect to an optical axis 79. As a result, when a wafer 73 is situated in a position 731, the interval between a mask 72 and the wafer 73 generates two light spots 801 on a sensor face 77 symmetrically with respect to the optical axis 79 in positions which are away by a distance y1 from the optical axis 79. The spot interval between the light spots 801 formed on the sensor face 77 and light spots which are symmetric with respect to the optical axis 79 gives the face interval d1 between the mask 72 and the wafer 73. The absolute value of the face interval between the mask 72 and the wafer 73 which have been counterposed in this manner can be detected with high accuracy by a simple constitution and without calibrating the absolute value.

公开(公告)号：JP2003124109A

公开(公告)日：2003-04-25

申请号：JP2001322031

申请日：2001-10-19

Applicant: CANON KK

Inventor： HASEGAWA MASANORI

IPC: G01B11/00 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To realize a high-accurate alignment in high contrast even when an alignment mark that is low in a level difference is used in a CMP process. SOLUTION: An electro-optical device is used as a phase plate for a phase- contrast microscope, and the phase shift volume of zero-order light is made variable for diffracted light other than zero-order light. Specifically, the vertical structure of an electro-optical device is applied to the phase plate, and light can be varied in phase from -π/2 to +π/2. A differential image between a mark image in bright contrast and a mark image in dark contrast is calculated by an image processor, and positional information as to a wafer is computed by the use of the above image. A plurality of images of an intermediate phase from -π/2 to +π/2 are picked up, the three-dimensional structure of the alignment mark is measured through phase extrapolation, and a target work is selectively aligned with the top/bottom of the alignment mark.

公开(公告)号：JP2000082658A

公开(公告)日：2000-03-21

申请号：JP26579798

申请日：1998-09-04

Applicant: CANON KK

Inventor： OGURI HISAAKI ,  SASAKI TOYONARI ,  HASEGAWA MASANORI

IPC: H01L21/027 ,  G01B7/00 ,  G03F7/207 ,  G03F9/00 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To enable presicely detecting a surface position, by corresponding to the change when the state of a surface to be detected is changed. SOLUTION: In surface position detecting equipment, a capacitance sensor which is provided with electrodes arranged above a surface to be detected, a voltage applying means OS applying a high frequency voltage across the electrode and the surface to be detected, and detecting means AM, 32 which detect a distance between the surface to be detected and the electrode, on the basis of a current flowing when a high frequency voltage is applied across the electrode and the surface to be detected is used. The capacitance sensor has a plurality of electrodes 301-306 as the electrodes and a selecting means SW selecting an electrode to be used.

公开(公告)号：JPH104054A

公开(公告)日：1998-01-06

申请号：JP17433896

申请日：1996-06-13

Applicant: CANON KK

Inventor： YOSHII MINORU ,  HASEGAWA MASANORI ,  MIYAZAKI KYOICHI

IPC: G03F7/207 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To realize a surface position detector device which is capable of very accurately detecting position data as to a work surface by a method wherein surface position data as to a work arranged adjacent to the image forming plane of a projection optical system are so set as to enable a slit group on a projector optical system side or a photodetecting plane on a photodetecting optical system side and a wafer surface to be put in a shine proof relation between them, and a diffusing plate is arranged on the photodetecting plane of the photodetecting optical system. SOLUTION: A slit group 6 and a wafer 3 are in a shine proof relation between them as to a projector optical system 7. The wafer 3 and a diffusion plate 9 are in a shine proof relation between them as to a photodetecting optical system 8. The photodetecting optical system 8 adopts an optical system which is bi-telecentric and of one magnification and forms an inverted image, and when a wafer surface and a photodetecting plane are put in a shine proof relation between them as to the photodetecting optical system 8, all slit images are formed on the photodetecting plane coincident with the slits as an object. Therefore, the slits are formed at a right position rightly reflecting the height of the plane, and the height of the wafer surface is precisely detected. A non-directional diffusion plate 9 is used as the image forming plane of a photodetecting optical system, and a slit image formed on the diffusion plate 9 is formed on an image sensing device 16, whereby an excellent slit image is obtained.

公开(公告)号：JPH09199407A

公开(公告)日：1997-07-31

申请号：JP2322596

申请日：1996-01-17

Applicant: CANON KK

Inventor： YOSHII MINORU ,  HASEGAWA MASANORI ,  MIYAZAKI KYOICHI

IPC: G03F7/207 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To detect the change of the light path length reflected the variation of a projecting/exposing optical system by a method wherein a laser interferometer, having a light path, is provided between an original sheet and the material to be exposed, and the length of the light path between the original sheet, reflecting the optical variation in the projecting/exposing system, and the material to be exposed, is detected. SOLUTION: When a reticle 1 is successively exposed to a wafer 3, the length of light path from the reticle 1 to the wafer 3 is extended because the position of the is unchanged. At that time, the signal of a photoelectric detector 10 showing the wafer height is changed from the phase 0 which is measured by a send. ahead process because the light path length between the reticle 1 and the wafer 3 is already measured. A stage 14 is moved to the photoaxial direction of a projection lens by a control system 18 in such a manner that the above- mentioned change is cancelled. As a result, the change of light path length is corrected, and the height of the surface of the wafer 3 can be positioned and exposed at the best focus position at all times.

公开(公告)号：JPH09167737A

公开(公告)日：1997-06-24

申请号：JP34793895

申请日：1995-12-15

Applicant: CANON KK

Inventor： YOSHII MINORU ,  MIYAZAKI KYOICHI ,  HASEGAWA MASANORI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To position the surface of a wafer to the image forming position of a projection optical system in a highly precise manner by a method wherein the optical axis direction of the wafer surface is aligned utilizing the position detecting part, which detects the position of optical axis direction of the projection optical system of the wafer surface, and a fluctuation detection part which detects the swinging of air. SOLUTION: A projecting and exposing operation is conducted on a reticle 2 and a wafer 4 by scanning at the prescribed speed ratio while they are being synchronized with each other in accordance with the magnification of image formation of a projection optical system 3. A projection part 5a and a detection part 6a constitute an element of a position detecting part. A light source part 5b and a light receiving part 6b constitute an element of a fluctuation detecting part. The information of distance from the prescribed surface of the auxiliary optical member 81, which is provided authogonally with the housing of a projection optical system 2, to the wafer 4 is computed by removing the effect of deflection of air based on the signal sent from a light receiving means 6. At this time, a driving part 8 is driven by a control part 9 using the above-mentioned distance information, and the wafer 4 is controlled to come to the desired position (the best image forming position of the projection optical system).