公开(公告)号：JP2003224047A

公开(公告)日：2003-08-08

申请号：JP2002018659

申请日：2002-01-28

Applicant: CANON KK

Inventor： HASEGAWA MASANORI

IPC: G02B21/06 ,  G02B21/36 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an aligning method and an aligner in which revolving power can be increased inexpensively without sacrifice of throughput, and to provide a method for fabricating a device. SOLUTION: An auxiliary optical system is provided around a projection optical system for focusing a mask pattern onto a body being aligned, a part of diffracted light generated by irradiating the mask pattern by means of an illuminator is received by the auxiliary optical system, image of the mask pattern is projected by the auxiliary optical system to the same position as that of the projection optical system, an optical image of fine pattern is formed by incoherent interference of two optical images formed by the projection optical system and the auxiliary optical system, and a fine resist pattern is formed by that optical image. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH1123225A

公开(公告)日：1999-01-29

申请号：JP13113298

申请日：1998-04-25

Applicant: CANON KK

Inventor： HASEGAWA MASANORI ,  OSAKI YOSHINORI ,  YOSHII MINORU

IPC: G01B11/00 ,  G01B11/26 ,  G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain an inspection device by which position information or the like on the direction of an optical axis on the surface of a wafer is detected with high accuracy and by which a high-integration-degree device can be manufactured easily by a method wherein a pattern which is formed by a pattern generator is projected on an object face from an oblique direction. SOLUTION: In a projection optical system 23, a pattern which is formed by a pattern generator is projected on an object face from an oblique direction, and a pattern image is formed on the object face. In a light-receiving optical system, a light-receiving element detects light from the pattern image. That is to say, by using respective face detecting devices 1 to 5, 11 to 16, 19, face-position information on a wafer 6 is detected. Thereby, the height in the direction of the optical axis of the projection optical system 23 in the face position of the wafer 6 is set to a conjugate relationship with a reticle 21 regarding the projection optical system 23. Then, a stage 10 is driven and controlled by a driver 25 in such a way that the wafer 6 is situated in the best image formation face of the projection optical system 23. Thereby, position information and inclination information on the direction of an optical axis on the surface of the wafer 6 are detected with high accuracy, and the wafer 6 can be situated in the image formation position of the projection optical system 23.

公开(公告)号：JPH07130636A

公开(公告)日：1995-05-19

申请号：JP28594193

申请日：1993-10-20

Applicant: CANON KK

Inventor： CHITOKU KOICHI ,  OSAWA MASARU ,  SAITO KENJI ,  HASEGAWA MASANORI

IPC: G03F9/00 ,  H01L21/027

Abstract: PURPOSE:To miniaturize and simplify the whole equipment, by detecting positional deviation in the lateral direction and the surface interval direction by using one equipment, when positional relations of a mask and a wafer in the interval direction and the surface interval are detected. CONSTITUTION:A position deviation detection alignment (AA) mark 41 and surface interval detection alignment (AF) marks 4, 4', 5, 5' are formed on a mask 2 surface. An AA mark 42 is formed on a wafer 3 surface. A photo detection means detects position data of luminous fluxes 51, 52 on a specified surface which fluxes are diffracted by the AF marks 4, 4', reflected by the wafer 3 surface, and diffracted by the AF marks 5, 5'. Further the photo detection means detects position data of luminous flux 53 on a specified surface which flux is diffracted by the AA mark 41 and the AA mark 42. The surface interval between the mask 2 and the wafer 3 and relative positional deviation are detected by using a signal from the position detection means. Thereby a position detector wherein the whole equipment is miniaturized and simplified can be realized.

公开(公告)号：JP2003233165A

公开(公告)日：2003-08-22

申请号：JP2002035644

申请日：2002-02-13

Applicant: CANON KK

Inventor： YAMAZOE KENJI ,  HASEGAWA MASANORI

IPC: G03F1/32 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide an exposure method which can expose patterns of contact hole arrays having fine hole diameters or the patterns intermingled with the isolated contact holes and the contact hole arrays with high resolution without exchanging a mask and an apparatus for the same. SOLUTION: The mask having the patterns to be transferred to a substrate have the first desired contact hole patterns, the first dummy contact hole patterns which are arrayed on the peripheries of the first desired contact hole patterns and have the hole diameters smaller than the hole diameters of the first desired contact hole patterns, the second desired contact hole patterns which are different in the hole diameters from the first desired contact hole patterns and the second dummy contact hole patterns which are arrayed on the peripheries of the second desired contact hole patterns and have the hole diameters smaller than the hole diameters of the second desired contact hole patterns. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002083761A

公开(公告)日：2002-03-22

申请号：JP2000273733

申请日：2000-09-08

Applicant: CANON KK

Inventor： HASEGAWA MASANORI

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To achieve resolution exceeding the resolution limit of existing aligners by means of an aligner, manufactured through the existing aligner manufacturing technique. SOLUTION: This aligner has scanning mechanisms 5 and 5', which scan a first mask 3 and a second mask 4 relatively, alignment/focus measuring devices 30 and 30' which are the position-detecting means for accurately detecting the relative positions of the first mask 3 and the second mask, and a control means which accurately controls the relative positions of that first mask 3 and the second mask 4, based on the output of the alignment/focus measuring devices 30 and 30', so as to form a fine pattern, using a resist having properties that it does not substantially leave irradiation history, and the scanning mechanisms 5 and 5' two-dimensionally scan the first mask 3 with respect to the second mask 4.

公开(公告)号：JP2000058427A

公开(公告)日：2000-02-25

申请号：JP22995398

申请日：1998-08-03

Applicant: CANON KK

Inventor： SATO TAKASHI ,  HASEGAWA MASANORI ,  INE HIDEKI ,  YOSHII MINORU

IPC: G03F7/22 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To enable an alignment operation of high accuracy to be carried out without being affected by uneven application of resist by a method wherein a rugged pattern of high symmetry is preferentially selected out of rugged patterns, and position data as to the rugged patterns are detected resting on a picture image obtained by picking up the rugged pattern. SOLUTION: The position (center position) of a mark is detected through an optical system. At this point, the mark which is judged excellent in symmetry resting on its cross sectional shape is preferentially selected out of marks (S4), and the picture image of the selected alignment mark of high symmetry is picked up by an image sensing means provided in a detection system, and position data on the alignment mark are detected resting on the picture image picked up by the image sensing means (S5). A circuit pattern on a reticule and a wafer are aligned with each other through the detected position data as to the alignment mark (S6), and a circuit pattern is transferred onto the wafer by exposure (S7). After an exposure operation that is carried out for all shots is finished, the wafer is taken out from a movable stage (S8), and processing is finished.

公开(公告)号：JPH11265847A

公开(公告)日：1999-09-28

申请号：JP26394798

申请日：1998-09-02

Applicant: CANON KK

Inventor： HASEGAWA MASANORI ,  INE HIDEKI

IPC: G01B11/00 ,  G03F7/207 ,  G03F7/22 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To remove a refraction effect in the surface of a resist on a mark in the observation of a bright-field image and to make it possible to perform a high-accuracy alignment of a detection object with the mark, by a method wherein reflected light obtained by illuminating the mark with light from the oblique direction is again returned vertically to the mark to reilluminate the mark and information on the detection object is detected by a detecting optical system. SOLUTION: An alignment mark 8 on the surface of a wafer 3 is illuminated with light from a light source, comprising an He-Ne laser or a semiconductor laser, from the oblique direction at a prescribed angle (θ) via a collimator lens 5, a slit plate 6 and a lens 7. A wave surface reflected on the surface of a resist on the mark 8 is distributed by a mirror 10, a lens 9, a half mirror 11 and a polarization beam splitter(PBS) 13 and the same mark 8 is illuminated with the wave surface from over the mark 8 via a λ/4 plate 12 and a lens 14. A bright-field image reflected on the mark 8 is returned to the former optical path, is transmitted the splitter (PBS) 13 and is observed by a two-dimensional sensor 16, such as a CCD camera, through a lens 14'.

公开(公告)号：JPH0936037A

公开(公告)日：1997-02-07

申请号：JP13961096

申请日：1996-05-09

Applicant: CANON KK

Inventor： YOSHII MINORU ,  TAKEUCHI SEIJI ,  HASEGAWA MASANORI ,  MIYAZAKI KYOICHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To determine an optimum exposure condition to expose a mass of wafers under this condition by irradiating a photosensitive pattern with an incident light beam, detecting the change of this beam, using signals from light receiving means to obtain the forming condition of the photosensitive pattern. SOLUTION: A beam 305 emitted from an optical source 301 reflects on the surface of a resist formed on a wafer 103 and the surface of the wafer. Combined beam thereof changes such that the phase difference between P- and S-polarizations and amplitude ratio thereof vary according to the birefringences n1 and n2 of the resist on the wafer 103. The beam is detected by a detector 3021 after passing through a rotating quarter wavelength plate 3024 and analyzer 3022. Thus, processing means 3022 obtains sinusoidal electric signals responding to the phase difference Δ and amplitude ratio Ψ and computes the phase difference Δ and amplitude ratio Ψ from the phase information of sine waves having amplitudes and d-c components corresponding thereto.

公开(公告)号：JPH07211629A

公开(公告)日：1995-08-11

申请号：JP2339394

申请日：1994-01-24

Applicant: CANON KK

Inventor： NOSE TETSUSHI ,  CHITOKU KOICHI ,  SAITO KENJI ,  HASEGAWA MASANORI ,  OSAWA MASARU

IPC: G02B7/28 ,  G03F9/00 ,  H01L21/027

Abstract: PURPOSE:To detect the positional shift and the planar interval between first and second objects accurately by selecting information based on a light spot, appearing on a predetermined plane depending on the interval between the first and second objects, or information based on the quantity of light and subjecting the selected information to signal processing. CONSTITUTION:First and second objects M, W are disposed oppositely through an interval (g). A plane wave luminous flux 1, subjected to condensation and ditvergence through alignment marks 2, 3, forms a light spot at a point 11 on a sensor 8 when the positional shift DELTA between the first and second objects M, W is zero. Similarly, a plane wave luminous flux, subjected to condensation and divergence through alignment marks 4, 5, forms a light spot at a point 12 on the sensor 8 and forms spots at points 11a, 12a on the surface of the sensor 8 when the positional shift is DELTA. Positional information of the spot on the surface of the sensor 8 or in a spot waveform file is then subjected to signal processing thus obtaining the information of relative positional shift between the first and second objects M and W.

公开(公告)号：JPH07130641A

公开(公告)日：1995-05-19

申请号：JP29391493

申请日：1993-10-29

Applicant: CANON KK

Inventor： HASEGAWA MASANORI ,  SAITO KENJI

IPC: G01B11/00 ,  G01D5/347 ,  G03F9/00 ,  H01L21/027 ,  H01L21/68

Abstract: PURPOSE:To detect the relative positions of a mask and a wafer with high precision, by using a plurality of different order luminous fluxes which are generated from alignment marks, adjusting the position of luminous flux from a light casting means, and detecting incident position data of the luminous flux on a specified surface. CONSTITUTION:A mask M and a wafer W on which an alignment mark MM and an alignment mark WM are formed, repectively, are arranged so as to face each other. Luminous flux from a light casting means wherein the projection direction is capable of displacement is made to pass the alignment marks MM, WM formed on the mask M and the wafer W, and then guided on a specified surface. By detecting the incident position data of the luminous flux on a specified surface with a detection means, the relative positions of the mask M and the wafer W are detected. In this case, the projection position of the luminous flux from the light casting means is adjusted by using a plurality of different order luminous fluxes generated from the alignment marks. Hence the incident position data on a specified surface are detected with high precision. Thereby a semiconductor element of high integration degree can be easily manufactured.