公开(公告)号：JPH06225064A

公开(公告)日：1994-08-12

申请号：JP2862593

申请日：1993-01-25

Applicant: CANON KK

Inventor： IKEDA ATSUSHI

IPC: H04N1/00

Abstract: PURPOSE:To easily acquire the transmission result even in a remote place by sending a false call signal to a telephone set connected to a facsimile equipment to sound it simultaneously with the end of transmission. CONSTITUTION:When the transmission processing is terminated, the transmission result report processing is started, and a telephone set preliminarily selected as the transmission result report destination is set to the on-hook state; and in the case of normal termination of transmission, a false call signal generating part 11 and a relay 13 are controlled to send the false call signal, and the selected telephone set is sounded. In the case of abnormal termination, the false call signal generating part 11 and the relay 13 are controlled to send another false call signal different from the false call signal for normal termination, and the telephone set is sounded. When off-hooking of the telephone set is detected or a certain time elapses, the facsimile equipment stops sending of the false call signal. Since the false call signal different between a failure and a success of transmission is sent to the telephone set in this manner, the transmission result is easily discriminated.

公开(公告)号：JPH05136374A

公开(公告)日：1993-06-01

申请号：JP12540292

申请日：1992-04-20

Applicant: CANON KK

Inventor： KIKUCHI SHIN ,  ICHIKAWA TAKESHI ,  OZU ITSUO ,  INOUE SHUNSUKE ,  KOUCHI TETSUNOBU ,  KADOMA GENZO ,  IKEDA ATSUSHI ,  MIYAWAKI MAMORU ,  NAKAMURA YOSHIO

IPC: H01L27/112 ,  H01L21/8246 ,  H01L27/10

Abstract: PURPOSE:To provide a semiconductor device, which is suitable for fine processing and has a memory means capable of high-speed operation with low power consumption and is miniaturized and integrated, and its manufacture. CONSTITUTION:The semiconductor device, which is equipped with an insulated gate type transistor which has the pillar-shaped semiconductor region provided on the main surface side of a semiconductor substrate, the gate electrode provided through a gate insulating film 5 on the side face of the pillar-shaped semiconductor region, and the main electrode regions provided above and below the pillar-shaped semiconductor region, and a memory 70, which is provided on the upper main electrode region and can be broken electrically, and its manufacture.

公开(公告)号：JPH04214868A

公开(公告)日：1992-08-05

申请号：JP2348791

申请日：1991-02-18

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI

IPC: C23C16/20 ,  C23C16/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: PURPOSE:To deposit and grow an Al alloy thin film of good quality on the surface of a substrate at high speed by a vapor phase reaction by feeding a reaction chamber placed with a substrate with an organic Al gas, an alloy atoms-contg. gas and a hydrogen gas and heating the substrate. CONSTITUTION:A substrate 109 constituted of a semiconductor or the like is supported by a holder 110 in a reaction chamber 101; the inside of the chamber is evacuated and after that, an organic Al gas 111A of alkyaluminum hydride or the like, a gas 115 contg. the atoms of elements for forming an Al alloy such as Si, Ti and Cu and an H2 gas 111 via a bubbler 105 are mixed by a mixer 104 and are fed into the reaction chamber 101 from an introducing port 106. At the same time, the top and back faces of the substrate 109 is heated to 260 to 440 deg.C by the regulation of a current controller 120 by heating means 100 constituted of a halogen lamp 102 and a reflecting mirror. An Al alloy thin film of high quality is uniformly formed on the top and back faces of the substrate 109 at high depositing speed.

公开(公告)号：JPH03111570A

公开(公告)日：1991-05-13

申请号：JP25001789

申请日：1989-09-26

Applicant: CANON KK

Inventor： OMI KAZUAKI ,  IKEDA ATSUSHI ,  MATSUMOTO SHIGEYUKI

IPC: C23C16/18 ,  H01L21/285

Abstract: PURPOSE:To obtain an Mo film high in step covering property on an LSI surface with good controllability and without damaging a substrate by supplying org. Mo compd. molecule and gaseous H2 on the electron-donative surface and keeping the surface at a specified temp. CONSTITUTION:For example, a reaction tube 2 for forming a deposited film forming space is evacuated by evacuating equipment 9, and an Si wafer 1 as the substrate is fixed to a holder 3 through a conveyance chamber 10. The surface of the wafer 1 is kept below the decomposition temp. of the org. Mo compd. and 800 deg.C by a heater 4. Subsequently, Mo(CO)6 is sublimed and supplied from a first gas line with H2 as the carrier gas, H2 is supplied from a second gas line, and the mixture is introduced into the reaction tube 2 through a mixer 5 to deposit an Mo film on the surface of the wafer 1. A semiconductor device highly integrated and made highly efficient in the semiconductor technical field is provided at a low cost by this method.

公开(公告)号：JPH03111569A

公开(公告)日：1991-05-13

申请号：JP25001589

申请日：1989-09-26

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI ,  OMI KAZUAKI

IPC: C30B25/00 ,  C23C16/18 ,  H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To obtain a flat W film excellent as a conductor with good controllability and without damaging a substrate by introducing gaseous hydrogen contg. a W atom contg. compd. and H2 into a deposited film forming space contg. the substrate having an electron-donative surface. CONSTITUTION:For example, a reaction tube 2 for forming the deposited film forming space is evacuated to a specified vacuum by evacuating equipment 9, and an Si wafer 1 as the substrate is fixed to a holder 3 through a conveyance chamber 10 and heated by a heater 4. W(CH3)6 and H2 as the carrier gas and H2 are supplied from first and second gas lines, heated and introduced into the reaction tube 2 through a mixer 5 to deposit W on the surface of the wafer 1. A semiconductor device highly integrated and made highly efficient in the semiconductor technical field is provided at a low cost by this method.

公开(公告)号：JPH03110842A

公开(公告)日：1991-05-10

申请号：JP25002089

申请日：1989-09-26

Applicant: CANON KK

Inventor： MATSUMOTO SHIGEYUKI ,  IKEDA ATSUSHI ,  OMI KAZUAKI

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/16 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205

Abstract: PURPOSE:To make it possible to deposit selectively a low-resistance, dense and flat Cu film on a substrate by a method wherein coppercontaining compound gas and hydrogen gas are introduced in a space, in which the substrate having an electron donative surface and a nonelectron donative surface are arranged, and the copper film is formed on the electron donative surface. CONSTITUTION:There is a thin film 91 consisting of a non-electron donative material on a substrate 90 consisting of an electron donative material. When mixed gas containing Cu(AcAc)2 gas, which is used as raw gas, and H2 gas, which is used as reaction gas, is fed on the substrate heated at the decomposition temperature or higher of Cu(AcAc)2 and within the range of a prescribed temperature, Cu is separated out on the substrate 90 and a continuous Cu film 92 is formed. Moreover, when deposition of Cu is continued on prescribed conditions, the film 92 is grown to the level of the uppermost part of the film 91. Moreover, when the film 92 is grown on the same conditions as the above conditions, the film 92 can be grown to a prescribed film thickness while scarcely growing in the lateral directions. Thereby, a falt and dense Cu film having low resistance and is superior migration resistance, can be selectively deposited on the substrate.

公开(公告)号：JP2013254517A

公开(公告)日：2013-12-19

申请号：JP2013176251

申请日：2013-08-28

Applicant: CANON KK

Inventor： IKEDA ATSUSHI ,  AMANO HIROYUKI

IPC: G06F21/41 ,  G06F3/12 ,  H04N1/00

Abstract: PROBLEM TO BE SOLVED: To provide an image transmitting device allowing taking over of authentication, confirmation of authentication, or existence or nonexistence of input screen display to be set according to an operational content.SOLUTION: An image transmitting device performs functional authentication for use of transmission function of the image transmitting device, and necessary authentication for transmitting image data to an image transmission destination. The image transmitting device stores authentication information used in authenticating a user during the functional authentication, and determines whether the stored authentication information is used when performing authentication which is performed according to the destination when the image is transmitted, on the basis of a setting method of the destination for transmitting means to transmit the image data to the destination.

公开(公告)号：JP2000358124A

公开(公告)日：2000-12-26

申请号：JP2000127754

申请日：2000-04-27

Applicant: CANON KK

Inventor： OKAMURA KOJI ,  IMAI TAKASHI ,  IKEDA ATSUSHI ,  HIRAI NOBUYUKI ,  UENO YASUHIDE

IPC: B41J29/38 ,  H04N1/00

Abstract: PROBLEM TO BE SOLVED: To allow a facsimile control section or a printer control section of a facsimile terminal to which an external information processing terminal is connectable to properly process information from the external processing terminal. SOLUTION: In a printer mode where data from an information processing terminal 109 are printed, an information processing terminal 109 and a printer section 2 are connected and a switch 120 is switched so that a command from the information processing terminal 109 is directly transferred to the printer section 2, and in a facsimile mode where other processing than that above is conducted, the switch 120 is switched so that the command from the information processing terminal 109 is transferred to a facsimile MPU 101.

公开(公告)号：JP2000295334A

公开(公告)日：2000-10-20

申请号：JP9744499

申请日：1999-04-05

Applicant: CANON KK

Inventor： IKEDA ATSUSHI

IPC: H04N1/00 ,  H04M1/57 ,  H04M11/00 ,  H04N1/32

Abstract: PROBLEM TO BE SOLVED: To provide facsimile equipment capable of easily switching announcing/non-announcing of a caller's number in accordance with a calling method. SOLUTION: Caller's number notice decision processing discriminates whether a calling method is automatic or manual (S21). When the calling method is discriminated as automatic and a set value about caller's number notice stored in an SRAM is 'announce' a caller's number, the 'announcement' of the caller's number is instructed to a transmission information generation processing program (S23). On the other hand, when the calling method is manual or the set value is 'does not announce' the caller's number, the 'non-announcement' of the caller's number is instructed to the transmission information generation processing program (S24). The transmission information generation processing program is started when a user operates an operating part to perform the automatic calling or the manual calling.

公开(公告)号：JPH11205490A

公开(公告)日：1999-07-30

申请号：JP181698

申请日：1998-01-07

Applicant: CANON KK

Inventor： IKEDA ATSUSHI ,  WATANABE NAOYA ,  FUJISE SHUNICHI

IPC: H04N1/00 ,  H04N1/21 ,  H04N1/411

Abstract: PROBLEM TO BE SOLVED: To provide an communication system and the processing method capable of performing high-speed data transfer without increasing a memory capacity by changing the form of data transferred between an image processor and an additional communication equipment corresponding to a transmission method and an image read method. SOLUTION: When a specified transmission method is memory transmission, MMR data for read image data are stored in an image pool 2011. In the case the transmission method is original transmission, MMR data are stored in the image pool 2011 when a read mode in starting the read of the original of a first page is binary read generally selected in the character original, RAW data are stored in the image pool 2011 when it is halftone read generally selected in the photograph original, the stored data are transferred through an i/f cable to an additional communication unit A1101 and facsimile transmission is performed.