公开(公告)号：JP2001168017A

公开(公告)日：2001-06-22

申请号：JP35348399

申请日：1999-12-13

Applicant: CANON KK

Inventor： MURAKI MASATO ,  YUI TAKASUMI

IPC: H01J37/305 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To expose a pattern on an object to be exposed by speedily performing a suitable proximate effect correction. SOLUTION: Concerning the charged corpuscular beam exposing device for exposing the pattern on the object to be exposed with charged corpuscular beams, this device is provided with memories 902-905 for storing plural kinds of control data for controlling the reference dose data of charged corpuscular beams corresponding to the incident position of charged corpuscular beams on the object to be exposed, a selector 907 for selecting any one kind of control data out of plural kinds of control data stored in these memories, and an exposure unit for exposing the pattern on the object to be exposed by controlling the reference dose data of charged corpuscular beams for each irradiating position on the basis of the control data selected by the selector.

公开(公告)号：JP2001168016A

公开(公告)日：2001-06-22

申请号：JP35348299

申请日：1999-12-13

Applicant: CANON KK

Inventor： MURAKI MASATO ,  YUI TAKASUMI

IPC: H01J37/147 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To exactly plot a fine pattern on a substrate while using charged corpuscular beams by more effectively excluding an adverse influence caused by a proximate effect while maintaining the throughput of exposing treatment. SOLUTION: An element exposure region (EF) having a size settled within a range with which an aberration caused by an electronic optical system becomes less than a prescribed quantity is divided into plural partial regions. On the basis of exposure information, in which the irradiation quantity of charged corpuscular beams is set for each of plural partial regions, the pattern is plotted on the substrate by electron beams. In this case, concerning each of partial regions, the entire correspondent region is continuously scanned and exposed with the irradiation quantity contained in the exposure information, and these scanning and exposure for each partial region are successively executed concerning all the partial regions in the relevant element exposure region.

公开(公告)号：JP2001076990A

公开(公告)日：2001-03-23

申请号：JP24672799

申请日：1999-08-31

Applicant: CANON KK

Inventor： YUI TAKASUMI ,  MURAKI MASATO

IPC: H01J37/302 ,  G01N23/20 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To reduce load at developing of exposure control data, in an electron beam exposure system. SOLUTION: Plural dot control data D(D(i, j, k), D(i+1, j, k), D(i, j+1, k), D(i+1, j+1, k)) for individually control of the irradiation of plural electron beams are connected and compressed, and compressed connection control data are generated. Then, the plural compressed connection control data are arranged, and exposure control data can be generated. In this electron beam exposure system, the exposure control data are developed to have the plural dot control data reproduced, and exposure can be executed by controlling a blanker, based on the reproduced dot control data.

公开(公告)号：JP2000277417A

公开(公告)日：2000-10-06

申请号：JP8144899

申请日：1999-03-25

Applicant: CANON KK

Inventor： YUI TAKASUMI ,  MURAKI MASATO

IPC: H01J37/305 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve producibility by arranging and storing an operation command for each deflection and an operation command for each sub-field on the same time series data. SOLUTION: A bit pattern of a clock as an operation command for each deflection and a bit pattern of a clock as an operation command for each sub- field are vritten in a clock pattern memory 459 in time series each. For example, a logic 1 is written at an interval equivalent to one deflection period as a bit pattern of a clock 391 supplied to an address counter 392 of a main deflector X. An address counter of a profiler of a driving element which sets driving data for each sub-field, that is, a focus coil address counter 419, a CLA address counter 368, an astigmatic coil address counter 431, a magnification coil address counter 439 and clocks 418, 367, 430, 438, 443 supplied to an MOL coil address counter 444 also write the logic 1 for each sub-field.

公开(公告)号：JP2000232053A

公开(公告)日：2000-08-22

申请号：JP3153299

申请日：1999-02-09

Applicant: CANON KK

Inventor： ONO HARUTO ,  MURAKI MASATO ,  YUI TAKASUMI

IPC: H01L21/027 ,  H01J37/317 ,  G03F7/20 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To make divided patterns on a mask link together on a wafer, with high accuracy. SOLUTION: A mask stage speed |Vm|, a wafer stage speed |Vw|, and the absolute value of a beam deflection amount |ΔS| are determined (step 101). Whether a stripe number is even, number is discriminated (step 108). Then on the basis of the discrimination result, the mask stage, the wafer stage and the deflecting direction of a wafer deflecting system are set (steps 109, 110). The wafer stage and the mask stage start continuous movement (step 113), and divided patterns are exposed to light (steps 115-119). Whether all the divided pattern have been exposed is discriminated (step 120). If not all the divided patterns are exposed, the deflection amount on a wafer which corresponds to the beam width on a mask is added (step 121), and the next divided pattern is exposed.

公开(公告)号：JP2000133565A

公开(公告)日：2000-05-12

申请号：JP30220498

申请日：1998-10-23

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: H01J37/20 ,  G03F9/00 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To correct the positional fluctuation of charged particle beam by a method, wherein a reference position of the charged particle beam with respect to a stage is corrected in response to the movement of the stage. SOLUTION: A calibrating wafer is carried out from electron beam exposure system (S108), an exposing wafer is mounted on an electrostatic chuck of a wafer stage (S109), and the wafer is continuously moved by the wafer stage (S110). Next, based on the present stage position from a stage position detection part and a correction amount at an electron beams reference position in each stage position stored in a memory, the correction amount at a reference position of electron beam is acquired at the present stage position, and the correction amount corresponding to that at the reference position of the electron beam is corrected by a deflector by instructing an electronic optical system control part. Alternatively, only the correction amount at a position of an X stage is corrected, so as to position the electron beam at a designed reference position by instructing a wafer stage control part (S111).

公开(公告)号：JPH1126348A

公开(公告)日：1999-01-29

申请号：JP17692497

申请日：1997-07-02

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for multiple electron beam exposure wherein a larger throughput is attained. SOLUTION: A multiple electron beam exposure method with a continuous stage movement comprises a first decision stage, where it is decided that at least one sub field of at least one main field is exposed to a plurality of electron beams, after settlement at such a polarization position that at least one of plurality of electron beams is radiated, while the plurality of electron beams is polarized for exposure without settlement at such polarization position as the entire electron beam is cut off, a stage where exposure time for each main field is calculated, and a second decision stage wherein the moving speed of a stage is decided to be such speed at which a main field corresponding to within such exposure time as that calculated for each main field can be exposed.

公开(公告)号：JPH10214777A

公开(公告)日：1998-08-11

申请号：JP1877397

申请日：1997-01-31

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G03F7/20 ,  H01J37/147 ,  H01J37/153 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To convert an electron beam from an electron gun efficiently into an arcuate electron beam by introducing an electron beam from an electrooptical system for converging an electron beam projected from a light source, passing between two cylindrical face electrodes upon application of a field, to an object while deflecting. SOLUTION: An electron beam projected from an electron gun 1 while diverging is converged through an electrooptical system, i.e., an electron lens, to produce an electron beam substantially parallel with the optical axis AX of a demagnification electrooptical system. The substantially parallel electron beam is passed through a first deflector DEF 1 having two cylindrical face electrodes EP11, EP12 arranged around the optical axis AX of the demagnification electrooptical system and deflected in the radiation direction therefrom. It is then passed through a second deflector DEF 2 having two cylindrical face electrodes EP21, EP22 arranged around the optical axis AX of the demagnification electrooptical system and deflected in the opposite radiation direction.

公开(公告)号：JPH10199469A

公开(公告)日：1998-07-31

申请号：JP544097

申请日：1997-01-16

Applicant: CANON KK

Inventor： MURAKI MASATO

IPC: G21K5/04 ,  G03F7/20 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To uniformly illuminate a wide illumination region by irradiating an object with electron beams through an illumination electron optical system having a plurality of electron lenses, and adjusting at least two lenses of a plurality of electron lenses wit information relating to intensity distribution of the electron beams irradiating the object. SOLUTION: An element electron optical system array 3 is formed by arranging a plurality of element electron optical systems comprising a blanking electrode, an opening, and an electron lens in the direction perpendicularly crossing to an optical axis. Electron beams emitted from an electron gun 1 are converted into almost parallel electron beams with a condenser lens 2, and applied to the element electron optical system array 3. The condenser lens 2 consists of electron lenses 2a, 2b, 2c, and by adjusting the focal distance of at least two electron lenses, or the position in the optical axis direction of at least two electron lenses, the intensity distribution of electron beams applied to the element electron optical system array 3 can be adjusted.

公开(公告)号：JPH09330867A

公开(公告)日：1997-12-22

申请号：JP15098696

申请日：1996-06-12

Applicant: CANON KK

Inventor： MURAKI MASATO ,  GOTO SUSUMU

IPC: G03F7/20 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To match the coordinate system of an electron beam to a deflected coordinate system with high accuracy by finding the relational coefficient between both coordinate systems by using the actual deflected position of the beam to the reference position of the beam on a stage coordinate system and the designed position of the beam by using the method of least squares and deciding the correction factor of a deflection control circuit. SOLUTION: A control system finds a coefficient by using the actual beam position (Xs, Ys) of an electron beam at every elemental electrooptical system and the designed position (Xa, Ya) of the beam by using the method of least squares and decides the coordinate system (Xa, Ya) of the beam on a stage coordinate system (Xs, Ys). Then the control system finds the coefficient by using the actual deflected position (Xds, Yds) of the beam to the reference position of the beam on the stage coordinate system at all elemental electrooptical systems and the designed positions (Xd, Yd) of the beam and decides a deflected coordinate system (Xd, Yd) on the stage coordinate system. Moreover, the control system decides the relational coefficient between the coordinate system of the beam and the deflected coordinate system and obtains the correction factor of a deflection control circuit by using the coefficient.