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公开(公告)号:DE69321814T2
公开(公告)日:1999-04-22
申请号:DE69321814
申请日:1993-12-13
Applicant: CANON KK
Inventor: TAKAHASHI KAZUHIRO , MURAKI MASATO
IPC: G02B17/08 , G02B27/28 , G03F7/20 , H01L21/027 , H01L21/30
Abstract: A catadioptric optical system includes a polarization beam splitter (3), a concave mirror (6), lens groups (2,5,8) and a quarter-wave plate (4), wherein an additional polarization-charging means (7) such as a quarter-wave plate, half-wave plate or electro-optic modulator is provided to transform the polarization of light from the polarization beam splitter.
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公开(公告)号:DE68924667T2
公开(公告)日:1996-03-28
申请号:DE68924667
申请日:1989-05-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA , SUZUKI AKIYOSHI , MURAKI MASATO
Abstract: A projection exposure apparatus including a mask stage (70) for supporting a mask (7), a wafer stage (10) for supporting a wafer (9), and a projection optical system (6,8) for projecting on the wafer an image of a circuit pattern of the mask is disclosed. There are provided a surface position detecting system (18) for detecting a position of a surface of the wafer with respect to a direction of an optical axis of the projection optical system, an adjusting device (20) for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, an outputting portion operable to direct a light beam to a reflection surface (17), provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system. Focus position detecting system operates to detect the focus position of the projection optical system, on the basis of the signal from the outputting portion, and a control system (19) operates to control the adjusting device on the basis of an output of the focus position detecting system and an output of the surface position detecting system.
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公开(公告)号:DE60233994D1
公开(公告)日:2009-11-26
申请号:DE60233994
申请日:2002-04-22
Applicant: CANON KK , HITACHI LTD , ADVANTEST CORP
Inventor: MURAKI MASATO , SOHDA YASUNARI , HASHIMOTO SHINICHI
IPC: G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027
Abstract: A high-precision multi-charged-particle-beam exposure apparatus is provided without increasing the performance of a reduction electron optical system. The multi-charged-particle-beam exposure apparatus includes a charged particle source (ES) for emitting a charged particle beam, an aperture array (AA) obtained by arranging a plurality of apertures that divide the charged particle beam from the charged particle source (ES) into a plurality of charged particle beams, a lens array (LA) obtained by arranging a plurality of electron lens for forming a plurality of intermediate images of the charged particle source (ES) on substantially one plane with the plurality of charged particle beams from the aperture array (AA), a blanker array (BA) located on the plane where the plurality of intermediate images are to be formed and having a plurality of blankers, and a reduction electron optical system for reducing and projecting the images of the charged particle source (ES) onto a substrate.
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公开(公告)号:DE68924667D1
公开(公告)日:1995-12-07
申请号:DE68924667
申请日:1989-05-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA , SUZUKI AKIYOSHI , MURAKI MASATO
Abstract: A projection exposure apparatus including a mask stage (70) for supporting a mask (7), a wafer stage (10) for supporting a wafer (9), and a projection optical system (6,8) for projecting on the wafer an image of a circuit pattern of the mask is disclosed. There are provided a surface position detecting system (18) for detecting a position of a surface of the wafer with respect to a direction of an optical axis of the projection optical system, an adjusting device (20) for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, an outputting portion operable to direct a light beam to a reflection surface (17), provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system. Focus position detecting system operates to detect the focus position of the projection optical system, on the basis of the signal from the outputting portion, and a control system (19) operates to control the adjusting device on the basis of an output of the focus position detecting system and an output of the surface position detecting system.
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公开(公告)号:DE602006020797D1
公开(公告)日:2011-05-05
申请号:DE602006020797
申请日:2006-01-26
Applicant: CANON KK , HITACHI HIGH TECH CORP
Inventor: MURAKI MASATO , OHTA HIROYA
IPC: H01J37/317 , H01J37/304
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公开(公告)号:DE602006020796D1
公开(公告)日:2011-05-05
申请号:DE602006020796
申请日:2006-01-26
Applicant: CANON KK , HITACHI HIGH TECH CORP
Inventor: MURAKI MASATO , OHTA HIROYA
IPC: H01J37/317 , H01J37/304
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公开(公告)号:DE69727112T2
公开(公告)日:2004-07-08
申请号:DE69727112
申请日:1997-10-23
Applicant: CANON KK
Inventor: TERASHIMA SHIGERU , MURAKI MASATO , OKUNUKI MASAHIKO , MIYAKE AKIRA , MATSUI SHIN
IPC: H01J37/317 , H01J37/30 , H01L21/30 , H01J37/302 , H01J37/304
Abstract: An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer (114) via a reduction electron optical system (108), irradiates collimated electron beams toward an aperture board (104) having an arcuated aperture (201) sandwiched between two arcs having, as the center, the axis of the reduction electron optical system (108), and exposes the wafer (114) with electron beams having an arcuated sectional shape that have been transmitted through the aperture (201).
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公开(公告)号:DE69326630D1
公开(公告)日:1999-11-11
申请号:DE69326630
申请日:1993-03-31
Applicant: CANON KK
Inventor: SHIOZAWA TAKAHISA , MURAKI MASATO , ISHII HIROYUKI , HAYATA SHIGERU
IPC: G03F7/20 , G03F7/207 , H01L21/027 , H01L21/30
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公开(公告)号:DE69738276T2
公开(公告)日:2008-04-03
申请号:DE69738276
申请日:1997-03-04
Applicant: CANON KK
Inventor: MURAKI MASATO , GOTOH SUSUMU
IPC: H01J37/153 , G03F7/20 , G21K5/10 , H01J37/145 , H01J37/302 , H01J37/317
Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.
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公开(公告)号:DE69738276D1
公开(公告)日:2007-12-27
申请号:DE69738276
申请日:1997-03-04
Applicant: CANON KK
Inventor: MURAKI MASATO , GOTOH SUSUMU
IPC: H01J37/153 , G03F7/20 , G21K5/10 , H01J37/145 , H01J37/302 , H01J37/317
Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.
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