公开(公告)号：DE69333753D1

公开(公告)日：2005-03-10

申请号：DE69333753

申请日：1993-02-26

Applicant: CANON KK

Inventor： SONO KOICHI ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO ,  SUGAWA SHIGETOSHI ,  KONDO SHIGEKI

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A liquid crystal display device comprises, at least, in a part of a close periphery of the display area of a pixel electrode substrate, a step substantially same as that of the display area.

公开(公告)号：DE69922730D1

公开(公告)日：2005-01-27

申请号：DE69922730

申请日：1999-04-21

Applicant: CANON KK

Inventor： HIYAMA HIROKI ,  SUGAWA SHIGETOSHI ,  UENO ISAMU ,  KOIZUMI TORU ,  KOCHI TETSUNOBU ,  SAKURAI KATSUHITO

IPC: H04N5/365 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/15

Abstract: In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.

公开(公告)号：DE69333192D1

公开(公告)日：2003-10-09

申请号：DE69333192

申请日：1993-02-26

Applicant: CANON KK

Inventor： SONO KOICHI ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO ,  SUGAWA SHIGETOSHI ,  KONDO SHIGEKI

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A liquid crystal display device comprises, at least, in a part of a close periphery of the display area of a pixel electrode substrate, a step substantially same as that of the display area.

公开(公告)号：DE69331767D1

公开(公告)日：2002-05-02

申请号：DE69331767

申请日：1993-12-30

Applicant: CANON KK

Inventor： OHZU HAYAO ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L27/148 ,  H04N1/00 ,  H04N1/48 ,  H04N5/33 ,  H04N5/372 ,  H04N9/04

Abstract: An image sensor in which a plurality of filters are stacked on a light-receiving portion, and which photoelectrically converts an optical signal into an electrical signal, wherein a plurality of sensor arrays each including a plurality of photoelectric conversion elements for converting an optical signal in a visible light range into an electrical signal by color-separating the optical signal, and a sensor array including a plurality of photoelectric conversion elements for converting an optical signal in an invisible light range into an electrical signal are arranged parallel to each other.

公开(公告)号：DE69330542D1

公开(公告)日：2001-09-13

申请号：DE69330542

申请日：1993-09-14

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  SUGAWA SHIGETOSHI ,  KOIZUMI TORU

IPC: H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/07 ,  H01L29/10 ,  H01L29/73 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

Abstract: A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

公开(公告)号：DE69033657T2

公开(公告)日：2001-05-03

申请号：DE69033657

申请日：1990-08-03

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  GOFUKU IHACHIRO ,  OHMI KAZUAKI ,  OSADA YOSHIYUKI ,  YAMANOBE MASATO

IPC: H01L27/146 ,  H01L31/107

公开(公告)号：DE69328911T2

公开(公告)日：2000-12-07

申请号：DE69328911

申请日：1993-01-27

Applicant: CANON KK

Inventor： INOUE SHUNSUKE ,  KOIZUMI TORU ,  MIYAWAKI MAMORU ,  SUGAWA SHIGETOSHI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/208 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE69132239D1

公开(公告)日：2000-07-06

申请号：DE69132239

申请日：1991-11-26

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  HASHIMOTO SEIJI ,  SUGAWA SHIGETOSHI ,  OHZU HAYAO

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/349 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

Abstract: A photoelectric converting device provided with a control electrode area of a semiconductor of a first conductive type and at least two main electrode areas of a semiconductor of a second conductive type different from the first conductive type, and capable of accumulating photo-generated carriers in the control electrode area. The control electrode area becomes substantially depleted at the resetting operation.

公开(公告)号：DE69327130D1

公开(公告)日：2000-01-05

申请号：DE69327130

申请日：1993-05-25

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/0376 ,  H01L31/107 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745

Abstract: A photoelectric conversion device wherein, in order to realize a photoelectric conversion device with high multiplication factors and excellent response speeds even under the application of low voltage by eliminating spike and notch in the hetero junction, a light absorbing layer (404) and a carrier multiplication layer (403) are made of non-single crystalline materials, said carrier multiplication layer (403) being comprised of a plurality of layers (411 to 414) with the forbidden band width changed continuously, and wherein the difference between the Fermi level and the vacuum energy level of said carrier multiplication layer (403) in the neighborhood of hetero junction is made substantially constant.

公开(公告)号：AT187278T

公开(公告)日：1999-12-15

申请号：AT93108415

申请日：1993-05-25

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/0376 ,  H01L31/107 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745

Abstract: A photoelectric conversion device wherein, in order to realize a photoelectric conversion device with high multiplication factors and excellent response speeds even under the application of low voltage by eliminating spike and notch in the hetero junction, a light absorbing layer (404) and a carrier multiplication layer (403) are made of non-single crystalline materials, said carrier multiplication layer (403) being comprised of a plurality of layers (411 to 414) with the forbidden band width changed continuously, and wherein the difference between the Fermi level and the vacuum energy level of said carrier multiplication layer (403) in the neighborhood of hetero junction is made substantially constant.