公开(公告)号：DE69934357D1

公开(公告)日：2007-01-25

申请号：DE69934357

申请日：1999-06-17

Applicant: SIEMENS AG ,  IBM

Inventor： GAMBINO JEFFREY P ,  GRUENING ULRIKE ,  MANDELMAN JACK A ,  RADENS CARL J

IPC: H01L21/8242 ,  H01L27/108

Abstract: Trench capacitors are fabricated utilizing a method which results in a refractory metal salicide as a component of the trench electrode in a lower region of the trench. The salicide-containing trench electrode exhibits reduced series resistance compared to conventional trench electrodes of similar dimensions, thereby enabling reduced ground rule memory cell leats and/or reduced cell access time. The trench capacitors of the invention are especially useful as components of DRAM memory cells.

公开(公告)号：DE10220542A1

公开(公告)日：2002-12-05

申请号：DE10220542

申请日：2002-05-08

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： RADENS CARL J ,  MANDELMAN JACK A ,  GRUENING ULRIKE

IPC: H01L21/8242 ,  H01L27/02 ,  H01L27/108 ,  H01L29/94

Abstract: A semiconductor device includes at least two active areas, each active area surrounding a corresponding trench in a substrate. The trenches each include a capacitor in a lower portion of the trench and a gate in an upper portion of the trench. A vertical transistor is formed adjacent to the trench in the upper portion for charging and discharging the capacitor. A body contact is formed between the at least two active areas. The body contact connects to the at least two active areas and to a diffusion well of the substrate for preventing floating body effects in the vertical transistor.

公开(公告)号：DE69934357T2

公开(公告)日：2007-09-20

申请号：DE69934357

申请日：1999-06-17

Applicant: SIEMENS AG ,  IBM

Inventor： GAMBINO JEFFREY P ,  GRUENING ULRIKE ,  MANDELMAN JACK A ,  RADENS CARL J

IPC: H01L21/8242 ,  H01L27/108

Abstract: Trench capacitors are fabricated utilizing a method which results in a refractory metal salicide as a component of the trench electrode in a lower region of the trench. The salicide-containing trench electrode exhibits reduced series resistance compared to conventional trench electrodes of similar dimensions, thereby enabling reduced ground rule memory cell leats and/or reduced cell access time. The trench capacitors of the invention are especially useful as components of DRAM memory cells.

公开(公告)号：HK1032292A1

公开(公告)日：2001-07-13

申请号：HK01102673

申请日：2001-04-17

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： GRUENING ULRIKE ,  RADENS CARL J ,  TOBBEN DIRK

IPC: H01L21/76 ,  H01L27/108 ,  H01L21/8242 ,  H01L

Abstract: A process for manufacturing a deep trench capacitor in a trench (10). The capacitor comprises a collar (18) in an upper region of the trench and a buried plate (26) in a lower region of the trench. The improvement comprises, before forming the collar in the trench upper region, filling the trench lower region with a non-photosensitive underfill material (16) such as spin-on-glass. The process may comprise the steps of (a) forming a deep trench in a substrate; (b) filling the trench lower region with an underfill material; (c) forming a collar in the trench upper region; (d) removing the underfill; and (e) forming a buried plate in the trench lower region.