公开(公告)号：SG44397A1

公开(公告)日：1997-12-19

申请号：SG1996000143

申请日：1992-08-21

Applicant: IBM

Inventor： DIENY AMERICA BERNARD ,  GURNEY BRUCE ALVIN ,  PARKIN STUART STEPHEN PAPWORTH ,  SANDERS IAN LEWIS ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

IPC: G11B5/39 ,  G01R33/09 ,  G01R33/06 ,  H01F10/10 ,  H01F10/08

Abstract: A magnetoresistive sensor comprising a layered structure having at least one bilayer comprising a first thin film of ferromagnetic material in interfacial contact with a second thin film of nonferromagnetic metallic material, characterised by the bilayer comprising a third thin film of material within said first thin film of ferromagnetic material, said third thin film having a thickness of between a fraction of a monolayer and several monolayers and being located at a predetermined distance x from the interface between said first and said second thin film layers.

公开(公告)号：SG42845A1

公开(公告)日：1997-10-17

申请号：SG1996000076

申请日：1993-11-01

Applicant: IBM

Inventor： BAUMGART PETER MICHAEL ,  DIENY BERNARD ,  GURNEY BRUCE ALVIN ,  NOZIERES JEAN-PIERRE ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

IPC: G11B5/39 ,  H01L43/08

Abstract: A magnetoresistive read sensor 30 based on the spin valve effect incorporates a multilayered, dual spin valve structure. The sensor read element includes first 31, second 35 and third 39 layers of ferromagnetic material separated from each other by layers of non-magnetic metallic material. The first and third layers of ferromagnetic material, i.e., the outer layers of the structure, have their magnetization orientation fixed, while the second, intermediate ferromagnetic layer is magnetically soft and has its magnetization oriented perpendicular to that of both the outer ferromagnetic layers in the absence of an applied magnetic field. In one preferred embodiment, the two outer ferromagnetic layers have their magnetizations fixed parallel to each other by exchange coupling with adjacent antiferromagnetic layers. In a second preferred embodiment, the directions or magnetization in the first and third layers of ferromagnetic material are aligned in an antiparallel orientation.

公开(公告)号：SG42342A1

公开(公告)日：1997-08-15

申请号：SG1996001706

申请日：1992-02-07

Applicant: IBM

Inventor： DIENY BERNARD ,  GURNEY BRUCE ALVIN ,  METIN SERHAT ,  PARKIN STUART STEPHEN PAPWORTH ,  SPERIOSU VIRGIL SIMON

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/16 ,  H01F10/32 ,  H01L43/10

Abstract: A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate (11) includes a first (12) and a second (16) thin film layer (14) of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.