Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having not only excellent sensitivity and resolution but also large depth of focus and excellent pattern peel-off resistance even on a substrate with high reflectivity. SOLUTION: The radiation sensitive resin composition for a chemically amplified resist is provided, which contains (A) a polymer having a repeating unit derived from a compound having a plurality of hydroxyl groups, such as glycerol monomethacrylate and (D) a solvent. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing an aquatic dispersion element for chemical mechanical polishing, capable of quickly polishing without substantially damaging a surface to be polished, especially in a chemical mechanical polishing process of STI. SOLUTION: The method for manufacturing the aquatic dispersion element for chemical mechanical polishing includes a process for successively adding (B): 0.05 to 5 w/t parts of polyorganosiloxane, (C): 5-100 w/t parts of cationic organic polymeric particles, and (D): 5-100 w/t parts of anionic water-soluble compound, to (A): aquatic dispersion element containing 100 w/t parts of inorganic particles containing ceria. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a compound for forming a ferroelectric thin film capable of forming a ferroelectric thin film where good hysteresis characteristics and saturation characteristics are obtained, on a substrate such as platinum, iridium, and iridium oxide. SOLUTION: Coating solution for forming the ferroelectric thin film, which contains (A) organic solvent expressed in the following general formula (1) and (B) organo-metallic compound, in which content of propylene glycol is 10,000 ppm or less. R 1 O(CHCH 3 CH 2 O) n R 2 ...(1) (where R 1 and R 2 independently show monovalent organic group selected from hydrogen atom, alkyl group having 1 to 4 of carbon number, or CH 3 CO, at least one of R 1 and R 2 is a group other than hydrogen atom, and n expresses integer of 1 to 2). COPYRIGHT: (C)2003,JPO
Abstract translation:要解决的问题:为了获得能够形成具有良好滞后特性和饱和特性的铁电薄膜的铁电薄膜的化合物,在诸如铂,铱和氧化铱的基板上。 解决方案:含有(A)下述通式(1)表示的有机溶剂和(B)丙二醇含量为10,000ppm以下的有机金属化合物的铁电体薄膜形成用涂布液。 R 1 O(CHCH 3 CH 2 O)n R 2 ...(1)(其中R 1和R 2独立地表示选自氢原子,具有1-4个碳原子的烷基的一价有机基团 数或CH 3 CO,R 1和R 2中的至少一个是除氢原子以外的基团,n表示1〜2的整数)。
Abstract:
PROBLEM TO BE SOLVED: To provide an embrocation for forming a ferroelectric thin film producing a smooth ferroelectric thin film. SOLUTION: The embrocation for forming the ferroelectric thin film includes an organic compound expressed by a formula HOOC-R1-X and an organic metal compound. In the formula, R1 is a bivalent organic group; X is one of any functional groups selected from a group comprising -CONR, 2R3, -OR2,-NR2R3,- NR2COR3, or expressed by formula I, formula II, formula III, -C≡N, -N≡N, -N≡C,-CR2=N-R3, -COR2 and -COCH2COOR2. However, R2 and R3 are a hydrogen atom, or a saturated or an unsaturated carbon hydride group independently.
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in focal depth and defect suppressing property.SOLUTION: The photoresist composition comprises a first polymer having a first structural unit expressed by formula (1), and an acid generator. In formula (1), Rrepresents a divalent alicyclic hydrocarbon group having 3 to 20 carbon atoms; in Rand R, Rrepresents a monovalent hydrocarbon group having 1 to 20 carbon atoms and Rrepresents a divalent connecting group having 1 to 20 carbon atoms, or Rand Rare coupled to represent a cyclic structure having 3 to 20 members constituted together with a carbon atom to which both groups are bonded.
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming an immersion overlay film, from which an immersion overlay film showing high water repellency can be formed and with which generation of development defects such as a bridge defect and a blob defect in a resist pattern can be suppressed.SOLUTION: The composition for forming an immersion overlay film comprises [A] a polymer having a structural unit (I) expressed by formula (1) and [B] a solvent. In formula (1), Rrepresents a hydrogen atom or a methyl group; Rand Reach independently represent a hydrogen atom, a fluorine atom, a hydroxyl group or an alkyl group having 1 to 6 carbon atoms; Rand Reach independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n represents an integer of 1 to 4.
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition allowing formation of a resist film, where a resist film surface exhibits excellent water drainability by showing a large dynamic contact angle during exposure in a liquid immersion exposure process and the resist film can be suppressed the occurrence of a development defect due to large reduction of the dynamic contact angle during development.SOLUTION: The present invention is a photoresist composition containing: [A] a polymer having an acid-dissociable group; [B] a polymer having a structural unit (I) represented by the following formula (1) and comprising a fluorine atom; [C] an acid generator; and [D] a solvent. Rand Rare each independently a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, with the proviso that Rand Rmay be linked with each other to form a ring structure having 3 to 20 carbon atoms, together with carbon atoms to which Rand Rare bonded.
Abstract translation:要解决的问题:提供允许形成抗蚀剂膜的光致抗蚀剂组合物,其中通过在液浸曝光工艺中曝光期间显示出大的动态接触角,抗蚀剂膜表面显示出优异的排水性,并且抗蚀剂膜可以 抑制由于显影期间的动态接触角的大幅降低而导致的显影缺陷的发生。 解决方案:本发明是一种光致抗蚀剂组合物,其含有:[A]具有酸解离基团的聚合物; [B]具有由下式(1)表示的含氟原子的结构单元(I)的聚合物; [C]酸产生器; 和[D]溶剂。 R 4 SP>和R 5 SP>各自独立地为氢原子或具有1至20个碳原子的一价有机基团,条件是 R 4 SP>和R 5 SP>可以彼此连接以形成具有3至20个碳原子的环结构,连同 R 4 SP>和R 5 SP>的碳原子键合。 版权所有(C)2013,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition not only having sufficient basic characteristics such as sensitivity and resolution but having sufficient DOF performance.SOLUTION: The radiation-sensitive resin composition contains: (A) a compound having an alicyclic hydrocarbon skeleton having 6 to 25 carbon atoms, the alicyclic hydrocarbon skeleton having two or more carbonyl groups; and (B) a resin which is protected with an acid-dissociable group, is insoluble or hardly soluble with an alkali, and is changed into alkali-soluble when the acid-dissociable group is dissociated.
Abstract:
PROBLEM TO BE SOLVED: To provide a water disperse form for a chemical mechanical polishing capable of decreasing polishing damages without reducing any polishing speed, and to provide a chemical mechanical polishing method using the water disperse form for the polishing, capable of removing excess insulating films in a refined element isolation process. SOLUTION: The water disperse form for the chemical mechanical polishing contains abrasive grains A including ceria, an anion nature soluble polymer B, and a cation nature surfactant C. It is characterized in that a content of the anion nature soluble polymer B is 60 to 600 parts by weight per the abrasive grains A of 100 parts by weight including the ceria, and a content of the cation nature surfactant C is 0.1 to 100ppm to the whole water disperse form for the chemical mechanical polishing. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a material for forming an interlayer insulation film for a semiconductor device or the like which has a low dielectric property and enables the formation of a coating film by short-time baking if being used on a base material (or substrate), with the coating film having superior heat resistance, crack resistance, and CMP resistance. SOLUTION: The composition for forming an interlayer film for a semiconductor device includes (A) a silicon-contained polymeric compound having a repeated, unit which contains a carbon-carbon triple bond and -Si-, and (B) an organic solvent. COPYRIGHT: (C)2004,JPO