Chemically amplified resist for radiation-sensitive resin composition and polymers
    31.
    发明专利
    Chemically amplified resist for radiation-sensitive resin composition and polymers 审中-公开
    用于化学放大电阻和聚合物的辐射敏感性树脂组合物

    公开(公告)号:JP2011075750A

    公开(公告)日:2011-04-14

    申请号:JP2009226078

    申请日:2009-09-30

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having not only excellent sensitivity and resolution but also large depth of focus and excellent pattern peel-off resistance even on a substrate with high reflectivity. SOLUTION: The radiation sensitive resin composition for a chemically amplified resist is provided, which contains (A) a polymer having a repeating unit derived from a compound having a plurality of hydroxyl groups, such as glycerol monomethacrylate and (D) a solvent. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种不仅具有优异的灵敏度和分辨率,而且即使在具有高反射率的基板上也具有高焦深度和优异的图案剥离电阻的辐射敏感性树脂组合物。 解决方案:提供了一种用于化学增幅抗蚀剂的辐射敏感性树脂组合物,其包含(A)具有衍生自具有多个羟基的化合物的重复单元的聚合物,例如单甲基丙烯酸甘油酯和(D)溶剂 。 版权所有(C)2011,JPO&INPIT

    Aquatic dispersion element for chemical mechanical polishing, its manufacturing method, and chemical mechanical polishing method
    32.
    发明专利
    Aquatic dispersion element for chemical mechanical polishing, its manufacturing method, and chemical mechanical polishing method 有权
    用于化学机械抛光的水性分散元件及其制造方法和化学机械抛光方法

    公开(公告)号:JP2008085133A

    公开(公告)日:2008-04-10

    申请号:JP2006264461

    申请日:2006-09-28

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an aquatic dispersion element for chemical mechanical polishing, capable of quickly polishing without substantially damaging a surface to be polished, especially in a chemical mechanical polishing process of STI. SOLUTION: The method for manufacturing the aquatic dispersion element for chemical mechanical polishing includes a process for successively adding (B): 0.05 to 5 w/t parts of polyorganosiloxane, (C): 5-100 w/t parts of cationic organic polymeric particles, and (D): 5-100 w/t parts of anionic water-soluble compound, to (A): aquatic dispersion element containing 100 w/t parts of inorganic particles containing ceria. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于化学机械抛光的水性分散元件的制造方法,能够快速抛光,而不会基本上损坏待抛光的表面,特别是在STI的化学机械抛光工艺中。 解决方案:用于化学机械抛光的水性分散体的制造方法包括:(B):0.05〜5w / t份的聚有机硅氧烷,(C):5〜100w / t份的阳离子 有机聚合物颗粒和(D):5-100w / t份阴离子水溶性化合物,(A):含有100w / t份含有二氧化铈的无机颗粒的水分散体。 版权所有(C)2008,JPO&INPIT

    Coating solution for forming ferroelectric thin film and ferroelectric thin film
    33.
    发明专利
    Coating solution for forming ferroelectric thin film and ferroelectric thin film 审中-公开
    用于形成薄膜和薄膜的涂层解决方案

    公开(公告)号:JP2003068729A

    公开(公告)日:2003-03-07

    申请号:JP2001256560

    申请日:2001-08-27

    Abstract: PROBLEM TO BE SOLVED: To obtain a compound for forming a ferroelectric thin film capable of forming a ferroelectric thin film where good hysteresis characteristics and saturation characteristics are obtained, on a substrate such as platinum, iridium, and iridium oxide.
    SOLUTION: Coating solution for forming the ferroelectric thin film, which contains (A) organic solvent expressed in the following general formula (1) and (B) organo-metallic compound, in which content of propylene glycol is 10,000 ppm or less. R
    1 O(CHCH
    3 CH
    2 O)
    n R
    2 ...(1) (where R
    1 and R
    2 independently show monovalent organic group selected from hydrogen atom, alkyl group having 1 to 4 of carbon number, or CH
    3 CO, at least one of R
    1 and R
    2 is a group other than hydrogen atom, and n expresses integer of 1 to 2).
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题:为了获得能够形成具有良好滞后特性和饱和特性的铁电薄膜的铁电薄膜的化合物,在诸如铂,铱和氧化铱的基板上。 解决方案:含有(A)下述通式(1)表示的有机溶剂和(B)丙二醇含量为10,000ppm以下的有机金属化合物的铁电体薄膜形成用涂布液。 R 1 O(CHCH 3 CH 2 O)n R 2 ...(1)(其中R 1和R 2独立地表示选自氢原子,具有1-4个碳原子的烷基的一价有机基团 数或CH 3 CO,R 1和R 2中的至少一个是除氢原子以外的基团,n表示1〜2的整数)。

    EMBROCATION FOR FORMING FERROELECTRIC THIN FILM AND FERROELECTRIC THIN FILM PRODUCED BY USING THE SAME

    公开(公告)号:JP2002100626A

    公开(公告)日:2002-04-05

    申请号:JP2000289023

    申请日:2000-09-22

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide an embrocation for forming a ferroelectric thin film producing a smooth ferroelectric thin film. SOLUTION: The embrocation for forming the ferroelectric thin film includes an organic compound expressed by a formula HOOC-R1-X and an organic metal compound. In the formula, R1 is a bivalent organic group; X is one of any functional groups selected from a group comprising -CONR, 2R3, -OR2,-NR2R3,- NR2COR3, or expressed by formula I, formula II, formula III, -C≡N, -N≡N, -N≡C,-CR2=N-R3, -COR2 and -COCH2COOR2. However, R2 and R3 are a hydrogen atom, or a saturated or an unsaturated carbon hydride group independently.

    Photoresist composition, method for forming resist pattern, polymer and compound
    35.
    发明专利
    Photoresist composition, method for forming resist pattern, polymer and compound 有权
    光刻胶组合物,形成耐蚀图案的方法,聚合物和化合物

    公开(公告)号:JP2014081633A

    公开(公告)日:2014-05-08

    申请号:JP2013202404

    申请日:2013-09-27

    Inventor: IKEDA NORIHIKO

    Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in focal depth and defect suppressing property.SOLUTION: The photoresist composition comprises a first polymer having a first structural unit expressed by formula (1), and an acid generator. In formula (1), Rrepresents a divalent alicyclic hydrocarbon group having 3 to 20 carbon atoms; in Rand R, Rrepresents a monovalent hydrocarbon group having 1 to 20 carbon atoms and Rrepresents a divalent connecting group having 1 to 20 carbon atoms, or Rand Rare coupled to represent a cyclic structure having 3 to 20 members constituted together with a carbon atom to which both groups are bonded.

    Abstract translation: 要解决的问题:提供焦深和缺陷抑制性能优异的光致抗蚀剂组合物。解决方案:光致抗蚀剂组合物包含具有由式(1)表示的第一结构单元的第一聚合物和酸产生剂。 式(1)中,R表示碳原子数3〜20的二价脂环式烃基, 在Rand R中,R表示具有1至20个碳原子的单价烃基,R表示具有1至20个碳原子的二价连接基团,或者Rare Rare偶联以表示与其中碳原子一起构成的具有3至20个成员的环状结构, 两组都有粘结。

    Composition for forming immersion overlay film and method for forming resist pattern
    36.
    发明专利
    Composition for forming immersion overlay film and method for forming resist pattern 有权
    用于形成浸渍膜的组合物和形成耐蚀图案的方法

    公开(公告)号:JP2013174669A

    公开(公告)日:2013-09-05

    申请号:JP2012038007

    申请日:2012-02-23

    Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an immersion overlay film, from which an immersion overlay film showing high water repellency can be formed and with which generation of development defects such as a bridge defect and a blob defect in a resist pattern can be suppressed.SOLUTION: The composition for forming an immersion overlay film comprises [A] a polymer having a structural unit (I) expressed by formula (1) and [B] a solvent. In formula (1), Rrepresents a hydrogen atom or a methyl group; Rand Reach independently represent a hydrogen atom, a fluorine atom, a hydroxyl group or an alkyl group having 1 to 6 carbon atoms; Rand Reach independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n represents an integer of 1 to 4.

    Abstract translation: 要解决的问题:为了提供一种用于形成浸渍覆膜的组合物,可以从其形成显示出高斥水性的浸渍覆盖膜,并且在抗蚀剂图案中可产生诸如桥缺陷和斑点缺陷的显影缺陷 抑制。溶液:用于形成浸渍覆盖膜的组合物包含[A]具有由式(1)表示的结构单元(I)和[B]溶剂的聚合物。 在式(1)中,R表示氢原子或甲基; Rand Reach独立地表示氢原子,氟原子,羟基或具有1至6个碳原子的烷基; Rand Reach独立地表示氢原子或具有1至20个碳原子的一价有机基团; n表示1〜4的整数。

    Photoresist composition
    37.
    发明专利
    Photoresist composition 有权
    光电组合物

    公开(公告)号:JP2013076789A

    公开(公告)日:2013-04-25

    申请号:JP2011215755

    申请日:2011-09-29

    Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition allowing formation of a resist film, where a resist film surface exhibits excellent water drainability by showing a large dynamic contact angle during exposure in a liquid immersion exposure process and the resist film can be suppressed the occurrence of a development defect due to large reduction of the dynamic contact angle during development.SOLUTION: The present invention is a photoresist composition containing: [A] a polymer having an acid-dissociable group; [B] a polymer having a structural unit (I) represented by the following formula (1) and comprising a fluorine atom; [C] an acid generator; and [D] a solvent. Rand Rare each independently a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, with the proviso that Rand Rmay be linked with each other to form a ring structure having 3 to 20 carbon atoms, together with carbon atoms to which Rand Rare bonded.

    Abstract translation: 要解决的问题:提供允许形成抗蚀剂膜的光致抗蚀剂组合物,其中通过在液浸曝光工艺中曝光期间显示出大的动态接触角,抗蚀剂膜表面显示出优异的排水性,并且抗蚀剂膜可以 抑制由于显影期间的动态接触角的大幅降低而导致的显影缺陷的发生。 解决方案:本发明是一种光致抗蚀剂组合物,其含有:[A]具有酸解离基团的聚合物; [B]具有由下式(1)表示的含氟原子的结构单元(I)的聚合物; [C]酸产生器; 和[D]溶剂。 R 4 和R 5 各自独立地为氢原子或具有1至20个碳原子的一价有机基团,条件是 R 4 和R 5 可以彼此连接以形成具有3至20个碳原子的环结构,连同 R 4 和R 5 的碳原子键合。 版权所有(C)2013,JPO&INPIT

    Radiation-sensitive resin composition
    38.
    发明专利
    Radiation-sensitive resin composition 有权
    辐射敏感性树脂组合物

    公开(公告)号:JP2012078505A

    公开(公告)日:2012-04-19

    申请号:JP2010222675

    申请日:2010-09-30

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition not only having sufficient basic characteristics such as sensitivity and resolution but having sufficient DOF performance.SOLUTION: The radiation-sensitive resin composition contains: (A) a compound having an alicyclic hydrocarbon skeleton having 6 to 25 carbon atoms, the alicyclic hydrocarbon skeleton having two or more carbonyl groups; and (B) a resin which is protected with an acid-dissociable group, is insoluble or hardly soluble with an alkali, and is changed into alkali-soluble when the acid-dissociable group is dissociated.

    Abstract translation: 要解决的问题:提供不仅具有足够的基本特性如灵敏度和分辨率但具有足够的DOF性能的辐射敏感性树脂组合物。 解决方案:辐射敏感性树脂组合物包含:(A)具有6至25个碳原子的脂环烃骨架的化合物,具有两个或更多个羰基的脂环族骨架; 和(B)用酸解离基团保护的树脂,与碱不溶或难溶,当酸解离基解离时,其变为碱溶性。 版权所有(C)2012,JPO&INPIT

    Water disperse form for chemical mechanical polishing and chemical mechanical polishing method
    39.
    发明专利
    Water disperse form for chemical mechanical polishing and chemical mechanical polishing method 审中-公开
    化学机械抛光和化学机械抛光方法的水分散形式

    公开(公告)号:JP2005236275A

    公开(公告)日:2005-09-02

    申请号:JP2005013148

    申请日:2005-01-20

    Abstract: PROBLEM TO BE SOLVED: To provide a water disperse form for a chemical mechanical polishing capable of decreasing polishing damages without reducing any polishing speed, and to provide a chemical mechanical polishing method using the water disperse form for the polishing, capable of removing excess insulating films in a refined element isolation process. SOLUTION: The water disperse form for the chemical mechanical polishing contains abrasive grains A including ceria, an anion nature soluble polymer B, and a cation nature surfactant C. It is characterized in that a content of the anion nature soluble polymer B is 60 to 600 parts by weight per the abrasive grains A of 100 parts by weight including the ceria, and a content of the cation nature surfactant C is 0.1 to 100ppm to the whole water disperse form for the chemical mechanical polishing. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种用于化学机械抛光的水分散形式,其能够降低抛光损伤而不降低抛光速度,并且提供使用水分散体形式进行抛光的化学机械抛光方法,能够去除 多余的绝缘膜在精细的元件隔离过程中。 解决方案:用于化学机械抛光的水分散形式包含包含二氧化铈,阴离子性质可溶性聚合物B和阳离子性表面活性剂C的磨料颗粒A.其特征在于阴离子性质可溶性聚合物B的含量为 相对于100重量份的磨料颗粒A为60〜600重量份,包括二氧化铈,阳离子性表面活性剂C的含量相对于用于化学机械抛光的全部水分散体的含量为0.1〜100ppm。 版权所有(C)2005,JPO&NCIPI

    Composition for forming interlayer film for semiconductor device, and interlayer film for semiconductor device
    40.
    发明专利
    Composition for forming interlayer film for semiconductor device, and interlayer film for semiconductor device 审中-公开
    用于形成半导体器件的层间膜的组合物和用于半导体器件的层间膜

    公开(公告)号:JP2003297820A

    公开(公告)日:2003-10-17

    申请号:JP2002095497

    申请日:2002-03-29

    Abstract: PROBLEM TO BE SOLVED: To provide a material for forming an interlayer insulation film for a semiconductor device or the like which has a low dielectric property and enables the formation of a coating film by short-time baking if being used on a base material (or substrate), with the coating film having superior heat resistance, crack resistance, and CMP resistance. SOLUTION: The composition for forming an interlayer film for a semiconductor device includes (A) a silicon-contained polymeric compound having a repeated, unit which contains a carbon-carbon triple bond and -Si-, and (B) an organic solvent. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题:提供一种用于形成半导体器件等的层间绝缘膜的材料,其具有低介电性能,并且如果用于基底上则能够通过短时间烘烤形成涂膜 材料(或基材),涂膜具有优异的耐热性,抗裂纹性和耐CMP性。 解决方案:用于形成半导体器件用中间膜的组合物包括(A)具有重复单元的含硅聚合物,其含有碳 - 碳三键和-Si-,和(B)有机 溶剂。 版权所有(C)2004,JPO

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