公开(公告)号：DE602005002409D1

公开(公告)日：2007-10-25

申请号：DE602005002409

申请日：2005-07-13

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  NISHIMOTO KAZUO ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: C09G1/04 ,  B24B37/00 ,  H01L21/304

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 µm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

公开(公告)号：DE602005002409T2

公开(公告)日：2008-06-12

申请号：DE602005002409

申请日：2005-07-13

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  NISHIMOTO KAZUO ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: C09G1/04 ,  B24B37/00 ,  H01L21/304

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 µm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

公开(公告)号：EP1962334A4

公开(公告)日：2010-11-17

申请号：EP06823573

申请日：2006-12-04

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  UENO TOMIKAZU

IPC: H01L21/3105 ,  C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/31053

公开(公告)号：EP2325695A4

公开(公告)日：2012-04-04

申请号：EP09813111

申请日：2009-09-10

Applicant: JSR CORP

Inventor： EBATA TAKUMA ,  NAKAGAWA HIROKI ,  MATSUDA YASUHIKO ,  KASAHARA KAZUKI ,  HOSHIKO KENJI ,  NAKASHIMA HIROMITSU ,  IKEDA NORIHIKO ,  SAKAI KAORI ,  HARADA SAKI

IPC: G03F7/039 ,  C08F20/26 ,  C08F20/28 ,  G03F7/004

CPC classification number: C08F20/28 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0397 ,  G03F7/2041

Abstract: A radiation-sensitive resin composition includes (A) a polymer, (B) a photoacid generator, (C) an acid diffusion controller, and (D) a solvent, the polymer (A) including a repeating unit (a-1) shown by the following general formula (a-1), and the acid diffusion controller (C) including at least one base selected from (C-1) a base shown by the following general formula (C-1) and (C-2) a photodegradable base. wherein R 1 individually represent a hydrogen atom or the like, R represents a monovalent group shown by the above general formula (a'), R 19 represents a chain-like hydrocarbon group having 1 to 5 carbon atoms or the like, A represents a divalent chain-like hydrocarbon group having 1 to 30 carbon atoms or the like, m and n are integers from 0 to 3 (m+n=1 to 3), and R 2 and R 3 individually represent a monovalent chain-like hydrocarbon group having 1 to 20 carbon atoms or the like, provided that the two R 2 may bond to form a ring structure.

公开(公告)号：EP2623558A4

公开(公告)日：2014-02-26

申请号：EP11829238

申请日：2011-09-28

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  NAKAMURA SHIN-ICHI

IPC: C08L33/04 ,  C08F22/18 ,  C08F22/28 ,  C08F220/18 ,  C08F224/00 ,  C08L37/00 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0397 ,  C08F220/18 ,  C08F224/00 ,  C08L2312/06 ,  C09D133/04 ,  G03F7/004 ,  G03F7/2041

公开(公告)号：JP2013205837A

公开(公告)日：2013-10-07

申请号：JP2012078436

申请日：2012-03-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SERIZAWA RYUICHI ,  IKEDA NORIHIKO

IPC: G03F7/039 ,  C08F220/10 ,  C08F224/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in LWR (line width roughness) performance, MEEF (mask error enhancement factor) performance and DOF (depth of focus) performance.SOLUTION: The photoresist composition comprises [A] a polymer having a structural unit (I) expressed by a formula (1) and a structural unit (II) expressed by a formula (2), and [B] an acid generator.

Abstract translation: 要解决的问题：提供LWR（线宽粗糙度）性能，MEEF（掩模误差增强因子）性能和DOF（深度聚焦）性能优异的光致抗蚀剂组合物。解决方案：光致抗蚀剂组合物包含[A]具有 由式（1）表示的结构单元（I）和由式（2）表示的结构单元（II），和[B]酸产生剂。

公开(公告)号：JP2013075964A

公开(公告)日：2013-04-25

申请号：JP2011215754

申请日：2011-09-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SATO MITSUHISA ,  TANAKA KIKA ,  IKEDA NORIHIKO

IPC: C08F24/00 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide: a novel compound which exhibits excellent drainability of a resist film surface in exposure in a liquid immersion exposure process and suppresses the generation of development defects; a polymer having a structural unit originated from the compound; and a photoresist composition containing the polymer.SOLUTION: The polymer has a structural unit originated from a compound represented by formula (1). The photoresist contains (A) a polymer having an acid-dissociative group, (B) the polymer, (C) an acid generator, and (D) a solvent. In formula (1), Rand Rare each independently a hydrogen atom or a 1-20C monovalent organic group; at least one of Rand Rhas a fluorine atom; and n is an integer of 1 to 4.

Abstract translation: 要解决的问题：提供：在液浸曝光工序中曝光时表现出优异的抗蚀剂膜表面的排水性的新型化合物，抑制显影缺陷的产生; 具有来自该化合物的结构单元的聚合物; 和含有聚合物的光致抗蚀剂组合物。 解决方案：聚合物具有源自由式（1）表示的化合物的结构单元。 光致抗蚀剂含有（A）具有酸解离基团的聚合物，（B）聚合物，（C）酸产生剂和（D）溶剂。 在式（1）中，R 1和R 2各自独立地为氢原子或1-20C的一价有机基团; R 4 和R 5 中的至少一个具有氟原子; n为1〜4的整数。版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010276624A

公开(公告)日：2010-12-09

申请号：JP2009115613

申请日：2009-05-12

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HARADA SAKI ,  IKEDA NORIHIKO ,  UKO TOMOHIRO ,  NAKAJIMA HIROMITSU

IPC: G03F7/039 ,  C08F220/26 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition, having a large depth of focus and superior pattern peel-off resistance. SOLUTION: The radiation-sensitive resin composition includes (A) a polymer component, which at least includes a repeating unit expressed by general formula (1) and a repeating unit expressed by general formula (2), wherein the percentage of the repeating unit expressed by general formula (2) in the entire repeating units is 1 mol%-10 mol%; and (B) a radiation-sensitive acid-generating agent. In general formula (1), R 1 indicates a hydrogen atom, a methyl group or a trifluoromethyl group, and R 2 indicates a 1-4C straight chain or branching alkyl group or a 4-20C univalent alicyclic hydrocarbon group. R 3 s indicate a 1-4C straight chain or branching alkyl group or a 4-20C univalent alicyclic hydrocarbon group independently of each other, alternatively two R 3 s bond together to form a 4-20C bivalent alicyclic hydrocarbon group with carbon atoms bonded to each other. In general formula (2), R 1 indicates a hydrogen atom, a methyl group or a trifluoromethyl group, A indicates a 1-30C bivalent chain hydrocarbon group, a 3-30C bivalent alicyclic hydrocarbon group or a 6-30C bivalent aromatic hydrocarbon group, and X indicates a univalent group having a structure expressed by general formula (i). In the general formula (i), R 4 s indicate hydrogen atoms or 1-5C chain hydrocarbon groups, independently of each other, m indicates 1 or 2, and n indicates 1 or 2. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有大的聚焦深度和优异的图案剥离性的辐射敏感性树脂组合物。 解决方案：辐射敏感性树脂组合物包括（A）至少包含由通式（1）表示的重复单元和由通式（2）表示的重复单元）的聚合物组分，其中， 在整个重复单元中由通式（2）表示的重复单元为1摩尔％-10摩尔％ 和（B）辐射敏感的酸产生剂。 在通式（1）中，R 1 表示氢原子，甲基或三氟甲基，R“SP”2表示1-4C的直链或支链烷基 或4-20C一价脂环族烃基。 R“3”表示1-4C的直链或支链烷基或4-20C一价脂环族烃基彼此独立地，或者两个R 3共3个 形成具有彼此键合的碳原子的4-20C二价脂环族烃基。 在通式（2）中，R 1 表示氢原子，甲基或三氟甲基，A表示1-30C二价链烃基，3-30C二价脂环族烃基或 6-30C二价芳香族烃基，X表示具有通式（i）表示的结构的一价基团。 在通式（ⅰ）中，R“S”表示氢原子或1-5C链烃基，彼此独立地表示m表示1或2，n表示1或2。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006032611A

公开(公告)日：2006-02-02

申请号：JP2004208609

申请日：2004-07-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IKEDA NORIHIKO ,  NISHIMOTO KAZUO ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: H01L21/304 ,  B24B37/00

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical machinery polishing in which the generation of polishing damage is suppressed without decelerating a polishing speed, and to provide a method of chemical machinery polishing having a step of removing an excess insulating film in a miniaturized element separating step by using the aqueous dispersing element.
SOLUTION: The aqueous dispersing element for the chemical machinery polishing contains an abrasive grain containing a ceria by a concentration of 1.5 mass% or less, wherein the mean dispersion particle size of the abrasive grain is 1.0 μm or more. The method of chemical machinery polishing has a step of polishing the insulating film by using the aqueous dispersing element for the chemical machinery polishing.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水分散元件，其中在不减速抛光速度的情况下抑制抛光损伤的产生，并且提供一种化学机械抛光方法，其具有除去过量绝缘 膜通过使用水分散元件在小型化元件分离步骤中。 解决方案：用于化学机械抛光的水性分散元件含有浓度为1.5质量％以下的二氧化铈的磨粒，其中磨粒的平均分散粒径为1.0μm以上。 化学机械抛光的方法是通过使用用于化学机械抛光的水分散元件来抛光绝缘膜的步骤。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003113256A

公开(公告)日：2003-04-18

申请号：JP2001307279

申请日：2001-10-03

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOHIKO ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: C08J5/18 ,  C08K5/56 ,  C08L83/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a coating solution capable of forming a bismuth strontium tantalate (SBT) thin film used for semiconductor memory, particularly a ferroelectric thin film for forming a uniform Bi-based ferroelectric thin film free from uneven coating on a substrate and to provide a method for forming the ferroelectric thin film. SOLUTION: This coating liquid for formation of the ferroelectric thin film comprises an organometallic compound and a polyether-modified silicone oil.