公开(公告)号：JP2009227864A

公开(公告)日：2009-10-08

申请号：JP2008076638

申请日：2008-03-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: C09D1/00 ,  C09D5/24 ,  C09D185/00 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide a coating type composition for forming an aluminum film having excellent long-term preservation stability, and handleability under a rough inert atmosphere. SOLUTION: The composition for forming the aluminum film includes a specific complex represented by a complex represented by formula (1) (wherein, R 1 is 9-20C alkyl, 9-20C alkenyl, 9-20C alkynyl or 7-20C alicyclic; and R 2 and R 3 are each independently hydrogen, 1-20C alkyl, 1-20C alkenyl, 1-20C alkynyl or 3-20C alicyclic). COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有优异的长期保存稳定性和粗糙惰性气氛下的操作性的用于形成铝膜的涂料型组合物。 解决方案：用于形成铝膜的组合物包括由式（1）表示的络合物表示的特定络合物（其中，R 11为烷基，9-20C链烯基，9 -20C炔基或7-20C脂环族; R 2 SP 2和R 3 SP 3各自独立地为氢，1-20C烷基，1-20C烯基，1-20C炔基或3 -20C脂环族）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007251049A

公开(公告)日：2007-09-27

申请号：JP2006075361

申请日：2006-03-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO ,  SAKAI TATSUYA ,  TAMAKI KENTARO

IPC: H05K9/00 ,  G02B1/10 ,  G09F9/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for inexpensively and easily manufacturing an electromagnetic wave shielding film having improved electromagnetic wave shielding properties and transmission properties. SOLUTION: The manufacturing method of the electromagnetic wave shielding film 7 includes: a process for preparing a transfer base material 4 comprising a metal base material 1 and an insulating film 2 that covers the surface of the metal base material and has a lattice-like recess 3, and plating a metal conductive layer 5 in the recess 3 of the transfer base material 4; a process for applying a transparent resin solution to the formation surface of the metal conductive layer 5 in the transfer base material 4 to form a transparent resin film 6 after drying; and a process for separating the transfer base material 4 from the transparent base material 6 for transferring the metal conductive layer 5 onto the transparent resin film 6 and forming the former on the latter. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种廉价且容易地制造具有改善的电磁波屏蔽性和透射性的电磁波屏蔽膜的方法。 解决方案：电磁波屏蔽膜7的制造方法包括：制备转印基材4的方法，转印基材4包括金属基材1和覆盖金属基材的表面并具有晶格的绝缘膜2 并且在转印基材4的凹部3中镀覆金属导电层5; 将透明树脂溶液涂布到转印基材4中的金属导电层5的形成面上，干燥后形成透明树脂膜6的工序; 以及用于将转印基材4与透明基材6分离以将金属导电层5转印到透明树脂膜6上并在其上形成前者的方法。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006241557A

公开(公告)日：2006-09-14

申请号：JP2005061202

申请日：2005-03-04

Applicant: Jsr Corp ,  Jsr株式会社 ,  Tokyo Univ Of Agriculture & Technology ,  国立大学法人東京農工大学

Inventor： SAKAI TATSUYA ,  KOMIYA SANSHIRO

IPC: C23C16/18 ,  C07C49/92 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition material having excellent preservation stability and further capable of obtaining a ruthenium film of high quality, and to provide a simple method for forming a ruthenium film using the chemical vapor deposition material.
SOLUTION: The chemical vapor deposition material comprises a compound expressed by formula (1): RuL
2 Y; wherein, L is a group expressed by formula (2); R
1 , R
2 and R
3 are respectively independently a hydrogen atom, a fluorine atom, a trifluoromethyl radical, a 1 to 10C hydrocarbon radical or a 1 to 10C alkoxy group; and Y is 1,5-cyclooctadiene, 1,3-cyclooctadiene, 1,4-cyclohexadiene, 1.3-cyclohexadiene, cyclopentadienyl, 1-3-butadiene or 2,3-dimethyl-1,3-butadiene.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有优异的保存稳定性并且还能够获得高质量的钌膜的化学气相沉积材料，并提供使用该化学气相沉积材料形成钌膜的简单方法。 化学气相沉积材料包括由式（1）表示的化合物：RuL 2 Y; 其中，L为式（2）表示的基团。 R 1 ，R 2 和R 3 分别独立地为氢原子，氟原子，三氟甲基，1〜10个烃基 或1至10个烷氧基; Y是1,5-环辛二烯，1,3-环辛二烯，1,4-环己二烯，1,3-环己二烯，环戊二烯基，1,3-丁二烯或2,3-二甲基-1,3-丁二烯。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006037161A

公开(公告)日：2006-02-09

申请号：JP2004218311

申请日：2004-07-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  HASHIMOTO SACHIKO ,  MATSUKI YASUO

IPC: C23C16/18 ,  C07C257/14 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285

CPC classification number: C23C16/18 ,  C07F15/0053

Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition material with which a good-quality ruthenium film can be obtained even if the ruthenium film of an extremely thin-film is formed and a simple method of forming the ruthenium film by using the chemical vapor deposition material. SOLUTION: The chemical vapor deposition material is a ruthenium compound having a ligand expressed by general formula (2). In the formula R 1 , R 2 and R 3 are each independently hydrogen atoms, fluorine atoms, trifluoromethyl groups or 1-10C hydrocarbons. The above ruthenium compound is used in the chemical vapor deposition method. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供即使形成极薄膜的钌膜也可以获得优质钌膜的化学气相沉积材料，并且通过使用简单的方法形成钌膜 化学气相沉积材料。 化学气相沉积材料是具有由通式（2）表示的配体的钌化合物。 在式R 1 SP 3中，R 2和R 3各自独立地为氢原子，氟原子，三氟甲基或1-10C烃。 上述钌化合物用于化学气相沉积法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2001010982A

公开(公告)日：2001-01-16

申请号：JP17894699

申请日：1999-06-24

Applicant: JSR CORP

Inventor： SAKAI TATSUYA

IPC: B01J31/20 ,  C07B61/00 ,  C07C2/40 ,  C07C11/12 ,  C07C15/44

Abstract: PROBLEM TO BE SOLVED: To produce a 1,4-diene compound useful for the production of an unsaturated ethylenic copolymer having high vulcanization rate in high selectivity by reacting ethylene with a 1,3-diene compound in the presence of an iron compound and a specific catalyst under a specific condition. SOLUTION: The objective compound of formula II is produced by reacting ethylene with a 1,3-diene compound of formula I [R1 to R3 are each H, a halogen, a 1-20C (halogenated)hydrocarbon group or an alkylsilyl] (e.g. isoprene) in the presence of a catalyst containing an iron compound [e.g. iron (III) acetylacetonate] and an organic aluminum compound of formula R4nAlZn-3 (R4 is a 1-20C univalent hydrocarbon group; Z is H, an alkoxyl or a halogen; 0 =3 MPa, preferably 3-50 MPa for 3 min to 2 hr.

公开(公告)号：JP2013021068A

公开(公告)日：2013-01-31

申请号：JP2011152005

申请日：2011-07-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  NISHIMURA HIDEKI ,  YAMAMOTO MASAHIRO ,  SAITO RYUICHI ,  NAKAGAWA YASUSHI ,  AOKI HIDEYUKI

IPC: H01L21/288 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate including an aluminum body capable of forming a film-like aluminum body having excellent film-forming characteristics (degree of reflection and adhesion) on the substrate.SOLUTION: A manufacturing method of a substrate including an aluminum body comprises: a plasma processing step of plasma-processing a substrate; a coating step of forming a coating layer composed of a composition for aluminum body formation containing a complex of an amine compound and an aluminum hydride and an organic solvent on the plasma-processed substrate by coating the composition on the substrate; and an aluminum film formation step of forming a film-like aluminum body by at least heating the coating layer or irradiating the coating layer with light.

Abstract translation: 要解决的问题：提供一种基板的制造方法，该基板包括能够在基板上形成具有优异的成膜特性（反射和粘合度）的膜状铝体的铝体。 解决方案：包括铝体的基板的制造方法包括：等离子体处理步骤，等离子体处理基板; 在基板上涂布组合物，在等离子体处理基板上形成由含有胺化合物和氢化铝和有机溶剂的配合物的铝体形成用组合物构成的涂层的涂布工序; 以及通过至少加热涂层或用光照射涂层来形成膜状铝体的铝膜形成步骤。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012216570A

公开(公告)日：2012-11-08

申请号：JP2011079059

申请日：2011-03-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA

IPC: H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device using a hard mask that can be formed in a simple manner and that is less likely to cause charge-up.SOLUTION: A method of manufacturing a semiconductor device includes: a step of coating an aluminum film formation material containing a complex of an amine compound and aluminum hydride on a processed film formed on a semiconductor substrate to form a coating film; a step of performing at least one kind of processing chosen from heating processing and light irradiation processing to the coating film to form an aluminum film; a step of etching the aluminum film to form a hard mask; and a step of etching the processed film using the hard mask as a mask.

Abstract translation: 要解决的问题：提供一种使用可以简单形成并且不太可能引起充电的硬掩模制造半导体器件的方法。 解决方案：一种制造半导体器件的方法包括：在形成在半导体衬底上的加工膜上涂覆含有胺化合物和氢化铝的复合物的铝成膜材料以形成涂膜的步骤; 执行从加热处理和光照射处理中选择的至少一种处理到涂膜以形成铝膜的步骤; 蚀刻铝膜以形成硬掩模的步骤; 以及使用硬掩模作为掩模蚀刻处理膜的步骤。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2008187133A

公开(公告)日：2008-08-14

申请号：JP2007021508

申请日：2007-01-31

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: H01L21/288 ,  C23C18/02 ,  G02F1/1343

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a copper thin film, which has excellent conductivity and allows a copper thin film to be formed by an application method to be used for many electronic devices easily and inexpensively; and a method of forming a copper thin film by using the material. SOLUTION: A material for forming a copper thin film contains a compound expressed by a formula shown below and a solvent. In the formula, each of R 1 through R 5 represents any of a hydrogen atom, a halogen atom, a hydrocarbon group having a carbon number of 1 to 15, a halogenated hydrocarbon group having a carbon number of 1 to 10, and an ether group having a carbon number of 1 to 10. R 1 through R 5 may be the same or different from each other. COPYRIGHT: (C)2008,JPO&INPIT

公开(公告)号：JP2008101206A

公开(公告)日：2008-05-01

申请号：JP2007244607

申请日：2007-09-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TAMAKI KENTARO ,  SAKAI TATSUYA ,  IWAZAWA HARUO ,  MATSUKI YASUO

IPC: C08G77/12 ,  C01B33/12 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful to form a silicon dioxide film of high purity without containing an organic component.
SOLUTION: This silicon dioxide precursor is represented by following rational formula (1): (H
2 SiO)
n (HSiO
1.5 )
m (SiO
2 )
k (1) (wherein n, m and k are numbers respectively, and when n+m+k=1, n is ≥0.5, m is >0 and ≤0.3, and k is 0 to 0.2), and is a silicone resin of a solid state at 120°C. The silicon dioxide precursor composition comprises the silicone resin and an organic solvent.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供二氧化硅前体和二氧化硅前体组合物，其用于形成高纯度的二氧化硅膜而不含有机组分。 解决方案：该二氧化硅前体由以下合理的式（1）表示：（H 2 SiO）（HSiO 1.5 ） （1）（其中n，m和k分别是数字，当n + m + k = 1时， ，n≥0.5，m> 0且≤0.3，k为0〜0.2），是120℃下的固态硅酮树脂。 二氧化硅前体组合物包含有机硅树脂和有机溶剂。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007210816A

公开(公告)日：2007-08-23

申请号：JP2006030638

申请日：2006-02-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: C03C25/42 ,  B05D7/22 ,  C23C18/10 ,  C23C18/14 ,  G02B6/00 ,  G02B6/02 ,  G02B6/032

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an aluminum film, which method exhibits good film formation capability even when an aluminum film is formed on the inside surface of a fiber having a fine hollow structure and is simple, low-cost, and performing continuous film formation. SOLUTION: The method for forming an aluminum film on the inside surface of a tube comprises applying a composition containing an amine compound/aluminum hydride complex and an organic solvent to the inside surface of the tube and subjecting the applied composition to heating and/or light irradiation. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种形成铝膜的方法，即使在具有细小中空结构的纤维的内表面上形成铝膜，该方法也具有良好的成膜能力，并且简单， 成本和连续成膜。 解决方案：在管的内表面上形成铝膜的方法包括将含有胺化合物/氢化铝配合物和有机溶剂的组合物施加到管的内表面，并对所施加的组合物进行加热和 /或光照射。 版权所有（C）2007，JPO＆INPIT