公开(公告)号：AU2003235306A1

公开(公告)日：2003-12-12

申请号：AU2003235306

申请日：2003-05-14

Applicant: JSR CORP

Inventor： OHKITA KENZO ,  TSUBOUCHI TAKASHI ,  OSHIMA NOBORU ,  SAKAI TATSUYA

IPC: C08F8/04 ,  C08F232/08

Abstract: A cyclic olefin addition copolymer obtained by copolymerizing a cyclic olefin compound having a side chain substituent group with a ring structure, such as endo-tricycloÄ4.3.0.1 Üdeca-3,7-diene or endo-tricycloÄ4.3.0.1 Üdeca-3-ene, with another cyclic olefin compound such as bicycloÄ2.2.1Ühept-2-ene, and further with a cyclic olefin compound having a hydrolysable silyl group as needed, or hydrogenating after copolymerization; a composition for crosslinking in which a specific crosslinking agent is incorporated; a crosslinked product obtained by crosslinking the composition; an optical material containing the copolymer, the composition or the crosslinked product; and a method for producing the copolymer in which addition polymerization is conducted using a specific nickel catalyst.

公开(公告)号：AU2003272881A1

公开(公告)日：2004-06-23

申请号：AU2003272881

申请日：2003-09-17

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  OKADA SACHIKO ,  MATSUKI YASUO

IPC: C07C51/00 ,  C23C16/18 ,  C07C11/12 ,  C07C13/263 ,  C07C53/124 ,  C07C53/18

Abstract: A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition. The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example

公开(公告)号：EP1995347A4

公开(公告)日：2010-04-28

申请号：EP06782219

申请日：2006-07-27

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  KAWAGUCHI KAZUO

IPC: C23C16/18 ,  H01L21/285

CPC classification number: C23C16/16 ,  C23C16/4485 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

公开(公告)号：EP1538169A4

公开(公告)日：2007-03-07

申请号：EP03723377

申请日：2003-05-14

Applicant: JSR CORP

Inventor： OSHIMA NOBORU ,  SAKAI TATSUYA ,  OHKITA KENZO ,  TSUBOUCHI TAKASHI

IPC: C08F8/04 ,  C08F232/08

CPC classification number: C08F232/08 ,  C08F8/04 ,  Y10T428/31663 ,  Y10T428/31938

Abstract: A cycloolefin addition copolymer which is obtained by copolymerizing a cycloolefin compound having a side-chain substituent having a ring structure, such as endo-tricyclo[4.3.0.12,5]deca-3,7-diene or endo-tricyclo[4.3.0.12,5]deca-3-ene, with other cycloolefin compound such as bicyclo[2.2.1]hept-2-ene and optionally further with a cycloolefin compound having a hydrolyzable silyl group or by conducting the copolymerization and then hydrogenation; a crosslinkable composition comprising the copolymer and a specific crosslinking agent incorporated therein; a crosslinked object obtained by crosslinking the composition; an optical material comprising any of the copolymer, composition, and crosslinked object; and a process for producing the copolymer which comprises conducting addition polymerization using a specific nickel catalyst.

公开(公告)号：EP2226368A4

公开(公告)日：2014-10-08

申请号：EP08865378

申请日：2008-12-24

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  TOMINAGA TETSUO

IPC: C09D185/00 ,  B32B15/20 ,  C07C211/65 ,  C07F5/06 ,  C09D5/00 ,  C09D7/12 ,  C23C18/08 ,  C23C18/10 ,  C23C18/14

CPC classification number: C09D185/00 ,  B32B15/20 ,  C07C211/65 ,  C07F5/069 ,  C09D5/00 ,  C23C18/08 ,  C23C18/10 ,  C23C18/14

公开(公告)号：EP2065428A4

公开(公告)日：2011-11-02

申请号：EP07828866

申请日：2007-09-21

Applicant: JSR CORP

Inventor： IWASAWA HARUO ,  SAKAI TATSUYA ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: C08G77/12 ,  C04B41/81 ,  C09D183/05 ,  H01L21/316 ,  H01L21/76

CPC classification number: H01L21/3124 ,  C08G77/06 ,  C08G77/12 ,  C08G77/16 ,  C09D183/04 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/316 ,  H01L21/76224

公开(公告)号：JP2013181119A

公开(公告)日：2013-09-12

申请号：JP2012046577

申请日：2012-03-02

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAGAWA YASUSHI ,  SAKAI TATSUYA

IPC: C09D185/00 ,  C01F7/02 ,  C04B41/82 ,  C09D7/12 ,  C23C18/12

CPC classification number: C09D7/1233 ,  C04B35/111 ,  C04B35/581 ,  C04B35/62222 ,  C04B2235/48 ,  C09D7/00 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/1233 ,  C23C18/1241 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/14 ,  H01L21/02178 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02628

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an aluminum-containing thin film, which is high in reactivity, and capable of obtaining an aluminum oxide film or an aluminum nitride film of high purity more easily than by a conventional method.SOLUTION: A composition for forming an aluminum-containing film contains an organic aluminum compound having a structure represented by a general formula (1) and an organic solvent. (In the general formula (1), each of R-Rindependently denotes a hydrogen atom or a hydrocarbon group, and may be identical or different, and optionally Rs (where n denotes an integer of 1-6) may be linked to one another to form a hydrocarbon group having a cyclic structure.).

Abstract translation: 要解决的问题：提供一种形成含铝薄膜的组合物，其反应性高，并且能够比常规方法更容易地获得高纯度的氧化铝膜或氮化铝膜。解决方案： 用于形成含铝膜的组合物含有具有由通式（1）表示的结构的有机铝化合物和有机溶剂。 （通式（1）中，R 1 R 2独立地表示氢原子或烃基，可以相同也可以不同，并且任选地R 5（其中n表示1-6的整数）可以彼此连接 形成具有环状结构的烃基）。

公开(公告)号：JP2010080530A

公开(公告)日：2010-04-08

申请号：JP2008244683

申请日：2008-09-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: H01L21/28 ,  C07C53/18 ,  C07F15/00 ,  C23C16/06 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition material by which a ruthenium film of high quality with less residual impurities can be obtained, and to provide a simple method for forming the ruthenium film by using the chemical vapor deposition material. SOLUTION: The chemical vapor deposition material contains a ruthenium compound such as tetra(μ-trifluoroacetate)di(acetone)diruthenium, tetra(μ-pentafluoropropionate)di(acetone)diruthenium, and a solvent. The chemical vapor deposition method uses the chemical vapor deposition material. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种化学气相沉积材料，通过该化学气相沉积材料可以获得具有较少残留杂质的高质量钌膜，并提供使用化学气相沉积材料形成钌膜的简单方法。 化学气相沉积材料包含钌化合物如四（μ-三氟乙酸盐）二（丙酮）二钌，四（μ-五氟丙酸酯）二（丙酮）二钌和溶剂。 化学气相沉积法使用化学气相沉积材料。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010080529A

公开(公告)日：2010-04-08

申请号：JP2008244678

申请日：2008-09-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO

IPC: H01L21/285 ,  C23C16/18 ,  H01L21/28

Abstract: PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method by which a film is stably formed, and a ruthenium film of high quality can be obtained. SOLUTION: The chemical vapor deposition method includes: a process for vaporizing a ruthenium compound such as tetra(μ-trifluoroacetate)di(acetone)diruthenium, tetra(μ-pentafluoropropionate)di(acetone)diruthenium, supplying the vaporized ruthenium compound to a reaction chamber, and depositing on a base; a process for stopping supply of the vaporized ruthenium compound to the reaction chamber, and removing the vaporized ruthenium compound remaining in the reaction chamber; and a process for forming a ruthenium film by dissolving the deposited ruthenium compound on the base. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：为了提供稳定地形成膜的化学气相沉积方法，并且可以获得高质量的钌膜。 化学气相沉积方法包括：将钌化合物如四（μ-三氟乙酸盐）二（丙酮）二钌，四（μ-五氟丙酸酯）二（丙酮）二钌蒸发的方法，将蒸发的钌化合物 到反应室，并沉积在基底上; 停止将蒸发的钌化合物供应到反应室中的步骤，以及除去残留在反应室中的蒸发的钌化合物; 以及通过将沉积的钌化合物溶解在基材上形成钌膜的方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009019263A

公开(公告)日：2009-01-29

申请号：JP2008068102

申请日：2008-03-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAI TATSUYA ,  KOMIYA SANSHIRO ,  NOMURA TADASHI

IPC: C23C16/18 ,  C07C49/92 ,  C07C53/10 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/0053 ,  C23C16/18 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28556 ,  H01L21/76843 ,  H01L28/65

Abstract: PROBLEM TO BE SOLVED: To provide a simple method capable of obtaining a good quality ruthenium film superior in long-term preservation stability, furthermore, little in residual impurities, and also capable of forming ruthenium film by using the material for chemical vapor deposition. SOLUTION: The material for chemical vapor deposition includes a diruthenium complex such as tetra(μ-formato)diruthenium(II,II), and tetra(μ-formato)(dihydrate)diruthenium(II,II); and a ruthenium film is formed by the chemical vapor deposition using this material. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 待解决的问题：提供一种简单的方法，其能够获得长期保存稳定性优异的优质钌膜，此外，残留杂质少，并且还能够通过使用化学气体材料形成钌膜 沉积 用于化学气相沉积的材料包括二钌配合物，例如四（μ-格式）二钌（II，II）和四（μ-格式）（二水合物）二钌（II，II）; 并且通过使用该材料的化学气相沉积形成钌膜。 版权所有（C）2009，JPO＆INPIT