公开(公告)号：US07439606B2

公开(公告)日：2008-10-21

申请号：US11830577

申请日：2007-07-30

Applicant: Lianjun Liu ,  Qiang Li ,  Melvy F. Miller ,  Sergio P. Pacheco

Inventor： Lianjun Liu ,  Qiang Li ,  Melvy F. Miller ,  Sergio P. Pacheco

IPC: H01L29/00

CPC classification number: H01L25/16 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03H7/38 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

Abstract translation: 阻抗匹配网络集成在第一裸片上并耦合到第二裸片，第一和第二裸片安装在导电背板上。 阻抗匹配网络包括桥接在第一和第二管芯之间的第一电感器，耦合到第一电感器并且设置在第一管芯上的第二电感器和设置在第一管芯上的金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器具有耦合到第二电感器的第一金属层和接地到导电背板的第二金属层。 一种用于制造集成阻抗匹配网络的方法包括以下步骤：在管芯上形成电感器，在管芯上形成电容器，将电容器耦合到电感器，将管芯底表面和电容器耦合到导电板上， 电感器到另一个电感器，其在管芯和另一个管芯之间桥接。

公开(公告)号：US07414316B2

公开(公告)日：2008-08-19

申请号：US11366928

申请日：2006-03-01

Applicant: Lianjun Liu ,  Marie E. Borucki

Inventor： Lianjun Liu ,  Marie E. Borucki

IPC: H01L23/48

CPC classification number: H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure (100) includes a first substrate (110) having a first semiconductor device (112) formed therein, a second substrate (120) having a second device (122) formed therein and vertically-integrated above the first substrate (110), and a thermal isolation gap (130) disposed between the first device (112) and the second device (122). The thermal isolation gap (130) may be formed, for example, using an etched dielectric layer formed on first substrate (110), using an etched cavity in the second substrate (120), or by including a bonding layer (140) that has a gap or void incorporated therein.

Abstract translation: 半导体结构（100）包括具有形成在其中的第一半导体器件（112）的第一衬底（110），具有形成在其中并垂直集成在第一衬底（110）上方的第二器件（122）的第二衬底（120） 以及设置在第一装置（112）和第二装置（122）之间的热隔离间隙（130）。 热隔离间隙（130）可以例如使用在第一基板（110）上形成的蚀刻介电层，使用第二基板（120）中的蚀刻空腔，或者通过包括具有 其中包含间隙或空隙。

公开(公告)号：US20080122560A1

公开(公告)日：2008-05-29

申请号：US11593896

申请日：2006-11-07

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H01P1/00 ,  H01L21/50

CPC classification number: B81B7/0077 ,  B81B2207/092

Abstract: An integrated passive device (20) includes a first wafer (22), a first integrated device (28) formed on a first surface (24) of the wafer (22), and a second integrated device (30) formed on a second surface (26) of the wafer (22), the second surface (26) opposing the first surface (24). A microelectromechanical (MEMS) device (72) includes a second wafer (74) having a MEMS component (76) formed thereon. The integrated passive device (20) and the MEMS device (72) are coupled to form an IPD/MEMS stacked device (70) in accordance with a fabrication process (90). The fabrication process (90) calls for forming (94) the second integrated device (30) on the second surface (26) of the wafer (22), constructing (100) the MEMS component (76) on the wafer (74), coupling (104) the wafers (22, 74), then creating the first integrated device (28) on the first surface (24) of the first wafer (22).

Abstract translation: 集成无源器件（20）包括第一晶片（22），形成在晶片（22）的第一表面（24）上的第一集成器件（28）和形成在晶片（22）的第二表面 （22）的第二表面（26），与第一表面（24）相对的第二表面（26）。 微机电（MEMS）装置（72）包括其上形成有MEMS部件（76）的第二晶片（74）。 集成无源器件（20）和MEMS器件（72）根据制造工艺（90）耦合以形成IPD / MEMS堆叠器件（70）。 制造工艺（90）要求在晶片（22）的第二表面（26）上形成（94）第二集成器件（30），在晶片（74）上构造（100）MEMS部件（76） 耦合（104）晶片（22,74），然后在第一晶片（22）的第一表面（24）上产生第一集成器件（28）。

公开(公告)号：US07276420B2

公开(公告)日：2007-10-02

申请号：US11179685

申请日：2005-07-11

Applicant: Lianjun Liu ,  Qiang Li ,  Melvy F. Miller ,  Sergio P. Pacheco

Inventor： Lianjun Liu ,  Qiang Li ,  Melvy F. Miller ,  Sergio P. Pacheco

IPC: H01L21/338 ,  H01L21/337 ,  H01L21/8222 ,  H01L21/20

CPC classification number: H01L25/16 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03H7/38 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

Abstract translation: 阻抗匹配网络集成在第一裸片上并耦合到第二裸片，第一和第二裸片安装在导电背板上。 阻抗匹配网络包括桥接在第一和第二管芯之间的第一电感器，耦合到第一电感器并且设置在第一管芯上的第二电感器和设置在第一管芯上的金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器具有耦合到第二电感器的第一金属层和接地到导电背板的第二金属层。 一种用于制造集成阻抗匹配网络的方法包括以下步骤：在管芯上形成电感器，在管芯上形成电容器，将电容器耦合到电感器，将管芯底表面和电容器耦合到导电板上， 电感器到另一个电感器，其在管芯和另一个管芯之间桥接。

公开(公告)号：US07018553B2

公开(公告)日：2006-03-28

申请号：US10418041

申请日：2003-04-18

Applicant: Lianjun Liu ,  Wayne L. Johnson

Inventor： Lianjun Liu ,  Wayne L. Johnson

IPC: H01L21/00 ,  G01R31/00

CPC classification number: H01J37/32082 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32532 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H05H1/0037

Abstract: A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value. Another aspect of the invention includes altering the flow of gas to different regions of the plasma in response to differences in the integrated power spectra detected by the fiber optic sensors. Several types of novel electrode assemblies suitable for carrying out the method of the invention are also disclosed.

公开(公告)号：US20050088261A1

公开(公告)日：2005-04-28

申请号：US10692548

申请日：2003-10-24

Applicant: Lianjun Liu ,  Steven Smith

Inventor： Lianjun Liu ,  Steven Smith

IPC: B81B3/00 ,  H01H51/22

CPC classification number: B81C1/00142 ,  B81B2201/016

Abstract: A method of making a micromechanical device including forming a dielectric layer over a sacrificial layer, wherein the dielectric layer includes silicon, oxygen and nitrogen. In on embodiment, the dielectric layer is silicon oxynitride formed using plasma enhanced chemical vapor deposition (PECVD). Silicon oxynitride can easily be formed as a low stress material, unlike silicon dioxide, and does not have a large charge trap density like silicon nitride.

Abstract translation: 一种制造微机械装置的方法，包括在牺牲层上形成电介质层，其中介电层包括硅，氧和氮。 在实施例中，电介质层是使用等离子体增强化学气相沉积（PECVD）形成的氮氧化硅。 氮氧化硅可以容易地形成为低应力材料，与二氧化硅不同，并且不具有诸如氮化硅的大的电荷陷阱密度。

公开(公告)号：US06794101B2

公开(公告)日：2004-09-21

申请号：US10159909

申请日：2002-05-31

Applicant: Lianjun Liu ,  Jenn-Hwa Huang ,  Lei Mercado ,  Shun-Meen Kuo

Inventor： Lianjun Liu ,  Jenn-Hwa Huang ,  Lei Mercado ,  Shun-Meen Kuo

IPC: G03G1304

CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H2001/0084

Abstract: A micro-electro-mechanical device (10) including a shorting bar (40) having a first portion (42) electrically coupled to a first input/output signal line (34) and a second portion (43) electrically uncoupled to a second input/output signal line (36). Shorting bar (40) is coupled to a moveable end (49) of a cantilever structure (44). Thus, preferably only the second portion (43) of shorting bar (40) needs to be actuated to be electrically coupled to the second input/output signal line (36).

Abstract translation: 一种微电子机械装置（10），包括具有电耦合到第一输入/输出信号线（34）的第一部分（42）的短路棒（40）和与第二输入端 /输出信号线（36）。 短杆（40）联接到悬臂结构（44）的可移动端（49）。 因此，优选仅需要致动短路棒（40）的第二部分（43）以电耦合到第二输入/输出信号线（36）。

公开(公告)号：US09674619B2

公开(公告)日：2017-06-06

申请号：US14004822

申请日：2012-02-22

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H04R25/00 ,  H04R23/00 ,  H04R1/04 ,  H04R31/00

CPC classification number: H04R23/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H04R1/04 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/029 ,  H01L2924/00014

Abstract: A micro-electro-mechanical system (MEMS) microphone and a forming method therefore. The MEMS microphone comprises: a first substrate, the first substrate is provided with a first bonding face, the first substrate comprises an MEMS microphone component and a first conductive bonding structure arranged on the first bonding face, a second substrate, the second substrate is provided with a second bonding face, the second bonding substrate comprises a circuit and a second conductive bonding structure arranged on the second bonding face; the first substrate and the second substrate are oppositely fitted together via the first conductive bonding structure and the second conductive bonding structure. Embodiments of the present invention have a simple packaging technique and a compact size; the MEMS microphone packaging structure formed has a great performance on signal-to-noise ratio, and a great anti-interference capability.

公开(公告)号：US20140210018A1

公开(公告)日：2014-07-31

申请号：US13753034

申请日：2013-01-29

Applicant: Chad S. Dawson ,  Dubravka Bilic ,  Lianjun Liu ,  Andrew C. McNeil

Inventor： Chad S. Dawson ,  Dubravka Bilic ,  Lianjun Liu ,  Andrew C. McNeil

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81B3/0072 ,  B81B2203/0127 ,  B81C1/00015

Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

Abstract translation: 提供了制造抗电微机电（MEMS）器件的方法，以及根据这些方法制造的MEMS器件。 在一个实施例中，该方法包括在衬底上形成牺牲体，在衬底上产生多层膜结构，以及去除牺牲体的至少一部分以在多层膜结构内形成内腔。 多层膜结构通过首先在牺牲体上方和周围形成基膜层使得基膜层具有非平面的上表面来制造。 然后去除预定厚度的基膜层，以使基膜层具有平坦的上表面。 在基膜层的平面上表面上形成盖膜层。 盖膜层由具有基本上平行的晶粒取向的材料构成。

公开(公告)号：US20140001581A1

公开(公告)日：2014-01-02

申请号：US14004575

申请日：2012-02-22

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81C1/00158 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: A micro-electro-mechanical system (MEMS) microphone may include a sensitive diaphragm and a fixed electrode corresponding to the sensitive diaphragm; at least one sensitive diaphragm support located on the surface of the sensitive diaphragm corresponding to the fixed electrode; and a sensitive diaphragm support arm coupled to the sensitive diaphragm support.

Abstract translation: 微机电系统（MEMS）麦克风可以包括敏感隔膜和对应于敏感隔膜的固定电极; 至少一个敏感隔膜支架，位于与固定电极相对应的敏感隔膜的表面上; 以及耦合到敏感隔膜支撑件的敏感隔膜支撑臂。