公开(公告)号：JP2002350259A

公开(公告)日：2002-12-04

申请号：JP2001157999

申请日：2001-05-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： EDA KAZUO ,  SAIJO TAKASHI ,  MIYAJIMA HISAKAZU ,  AOKI AKIRA

IPC: G01L9/04 ,  G01L9/00 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor and a manufacturing method for it capable of improving detection accuracy and temperature characteristics of the detection precision. SOLUTION: This semiconductor is provided with a SOI base board 1, in which a buried oxide film 3 formed of a silicon oxide film is formed in the middle of the thickness direction and a silicon active layer 2 is formed on the main surface side, a diaphragm part 6 formed by etching a supporting base board 4 from the back face of the SOI base board 1 and forming a pressure introduction port 4a reaching the buried oxide film 3, and a gauge resistor 5 formed on the main surface side of the active layer 2 for detecting deformation of the diaphragm part 6. The buried oxide film 3 is arranged over the whole surface on the back side of the active layer 2.

公开(公告)号：JP2002328136A

公开(公告)日：2002-11-15

申请号：JP2001133424

申请日：2001-04-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： AKAI SUMIO ,  YAMAMOTO MASAHIRO ,  KATAOKA KAZUSHI ,  SAIJO TAKASHI

IPC: G01P15/12 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To accurately detect acceleration. SOLUTION: This sensor is provided with a base body 1 having a fixed face 1a, an acceleration sensor chip 2 having thin-walled part 2b provided with a recessed part 2a from one side face to be thinned locally, a connection member 3 having a prescribed thickness dimension for connection-fixing the acceleration sensor chip 2 onto the fixed face 1a to oppose the other side face of the acceleration sensor chip 2 to the fixed face 1a with a facing space corresponding to the prescribed thickness dimension, and a lid body 4 for closing the recessed part 2a of the acceleration chip 2, and the acceleration is detected based on only deflection of the thin-walled part 2b when the acceleration is received.

公开(公告)号：JP2001337104A

公开(公告)日：2001-12-07

申请号：JP2000157336

申请日：2000-05-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： ISHIDA TAKUO ,  KAMI HIRONORI ,  SAITO HIROSHI ,  AKAI SUMIO ,  KATAOKA KAZUSHI ,  SAIJO TAKASHI ,  SAITO MAKOTO

IPC: G01P15/12 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To make a temperature characteristic relating to the detection of acceleration hard to deteriorate. SOLUTION: This semiconductor acceleration sensor includes an acceleration sensor chip 1 having a beam-shaped deflecting part 12 extended therefrom, with a weight part 13 supported against the end of the deflecting part 12 by integral molding, the weight part being displaced by acceleration; a first cap 2 joined to one face of the acceleration sensor chip 1 in such a manner as to face the weight part 12; and a second cap 3 having a joining face 32 joined to the other face of the acceleration sensor chip 1 in such a manner as to face the weight part 13 from the side opposite to the first cap 2, with the second cap being supported on a base. The second cap 3 is so formed that a recessed stress-relieving part 33 for relieving stress is provided on the joining face 32 thereof.

公开(公告)号：JP2001311740A

公开(公告)日：2001-11-09

申请号：JP2000129390

申请日：2000-04-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： ISHIDA TAKUO ,  KAMI HIRONORI ,  SAITO HIROSHI ,  AKAI SUMIO ,  KATAOKA KAZUSHI ,  SAIJO TAKASHI ,  SAITO MAKOTO

IPC: G01P15/12 ,  G01P15/125 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To prevent the reduction of temperature characteristic for acceleration detection. SOLUTION: In a semiconductor acceleration sensor provided with an acceleration sensor chip 1 extending a beamlike bending part 12 and supporting a weight part 13 displaced due to acceleration by forming it integrally on a tip side of the bending part 12, a first cap 2 joined on a face on one side of the acceleration sensor chip 1 to oppose to the weight part 13, and a second cap 3 joined on a face on the other side of the acceleration sensor chip 1 to oppose to the weight part 13 from the opposite side to the first cap 2, the first cap 2 is provided with a recessed stress reducing part 24 reducing stress on an opposing face 23 opposing to the weight part 13.

公开(公告)号：JP2001160626A

公开(公告)日：2001-06-12

申请号：JP34149199

申请日：1999-11-30

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAITO HIROSHI ,  AKAI SUMIO ,  KUZUHARA KAZUNARI ,  SAIJO TAKASHI ,  TAKAMI SHIGENARI

IPC: H01L41/08 ,  G01P15/12 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To provide a compact semiconductor acceleration sensor with high reliability for making it unnecessary to set any wire bonding process, and for easily forming protrusion for limiting the displacement of a weight part. SOLUTION: In this semiconductor acceleration sensor having stoppers 2 and 3 connected with a semiconductor acceleration sensor chip 1 for suppressing the excessive displacement of a weight part 5, a glass substrate with metallic wires having one or more metallic wires 19 whose edge parts are exposed to a first main surface and a second main surface in a direction orthogonally crossing the main surface is used for the stopper 2 or 3.

公开(公告)号：JP2000338125A

公开(公告)日：2000-12-08

申请号：JP14661599

申请日：1999-05-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： AKAI SUMIO ,  SAITO HIROSHI ,  ISHIDA TAKUO ,  KATAOKA KAZUSHI ,  KAMI HIRONORI ,  SAIJO TAKASHI ,  SAITO MAKOTO

IPC: G01P15/12 ,  G01P15/08 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To obtain the air damping effect by air and to prevent the impairing of yield in accompany with the damping by forming an air hole communicating the inside surrounded by a bonding layer with the external on one of the bonding layer and a stopper. SOLUTION: The main surface side of a single crystal silicon substrate 10 is flattened by spin coatingn an SOG film on the main surfaee side, and the clearance formed on a silicon nitride film on a diffused resistor wiring 15 is buried by the SOG film to flatten a metallic layer for bonding 17, whereby the generation of clearance with respect to an upper stopper is prevented. A single air hole A communicating the inside surrounded by the metallic layer for bonding 17 with the outside, is formed on the metallic layer for bonding 17. Air is filled inside of a sensor tip through the air hole A, whereby the air damping effect can be obtained. In addition, since there is formed only one air hole A, the intrusion of water and chips through the air hole A during dicing can be prevented by the air pressure inside the sensor chip.

公开(公告)号：JP2000208783A

公开(公告)日：2000-07-28

申请号：JP853299

申请日：1999-01-14

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： EDA KAZUO ,  SAIJO TAKASHI ,  MIYAJIMA HISAKAZU

IPC: G01L9/04 ,  G01L9/00 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which can be miniaturized and improved in sensitivity and accuracy, and a method of its manufacturing. SOLUTION: A pressure guide hole 6, whose aperture area becomes smaller between from one to the other surface in the thickness direction of a single- crystalline silicon wafer 1 is formed on a sensor chip A. A thin film made of a thermal oxide film 5 is formed as a diaphragm part 20, with is pressed by closing an aperture surface of the pressure guide hole 6 on one surface of the single-crystalline silicon wafer 1. Since the opening area of the pressure guide hole 6 formed on the sensor chip A is smaller than the area of the diaphragm part 20, the sensor chip A can be miniaturized. Since the diaphragm part 20 comprises the thin film made of the thermal oxide film 5, the diaphragm part 20 can be thinner in thickness. Moreover, the uniformity of the thickness of the diaphragm part 20 in the inside surface of the diaphragm 20 or the inside of the wafer can be improved. Thereby, the sensitivity and the accuracy can be improved.

公开(公告)号：JPH11311577A

公开(公告)日：1999-11-09

申请号：JP11769798

申请日：1998-04-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： EDA KAZUO ,  SAIJO TAKASHI

IPC: G01L9/04 ,  G01L9/00 ,  H01L21/301 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor pressure sensor base whereby a groove part can be formed easily on the glass base for easing the stress. SOLUTION: A flat substrate 1 having a plurality of pressure introduction holes 1a formed therein and a substrate 2 comprising a cylindrical part 2b with pressure introduction holes 2a, thin parts 2c a frame 2d are prepared. The substrates 1 and 2 are united to connect the pressure introduction holes 1a, 2a. The united substrates 1, 2 are dipped in an acid solution to be etched entirely until the thin parts 2c are eliminated. A flat substrate 3 having pressure introduction holes 3a is united to a face of the substrate 2 opposite to a face at the side where the substrate 2 is united with the substrate 1, to connect the pressure introduction holes 2a, 3a. A glass base 4 having hollow parts 4a is thus formed. A semiconductor pressure sensor wafer 5 having a diaphragm 5a is united to a face of the substrate 3 opposite to a unite face of the substrate 3 to the substrate 2. Finally, the semiconductor pressure sensor wafer 5 and glass base 4 are diced to open the hollow parts 4a and divided to every chip. A semiconductor pressure sensor with groove parts 4b formed at an outer peripheral side face of the glass base 4 is obtained in this manner.

公开(公告)号：JPH10239194A

公开(公告)日：1998-09-11

申请号：JP4514197

申请日：1997-02-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： EDA KAZUO ,  YAMAGUCHI SHUICHIRO ,  SAIJO TAKASHI

IPC: G01L9/04 ,  G01L9/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor, of which the resistance of a piezoelectric resistor can be regulated easily. SOLUTION: A plurality of piezoelectric resistor elements 1 are formed on a diaphragm formed on a semiconductor substrate and a contact hole 2 is made at the end part of each piezoelectric resistor element 1 using photolithography process and etching process. When interconnection of a semiconductor pressure sensor is carried out by a metallization 3 of aluminum Al, or the like, the piezoelectric resistor elements 1 are connected electrically in parallel by a conductor layer, i.e., the metallization 3, through the contact holes 2. Subsequently, the metallization 3 connecting the piezoelectric resistor elements 1 in parallel is subjected to laser trimming at desired part so that the piezoelectric resistor element has a resistance bound from the rated driving voltage and current and a desired output voltage.

公开(公告)号：JPH10185720A

公开(公告)日：1998-07-14

申请号：JP34477996

申请日：1996-12-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： ISHIGAMI ATSUSHI ,  HORI MASAMI ,  SAIJO TAKASHI ,  YAMAGUCHI SHUICHIRO ,  KATAOKA KAZUSHI

IPC: G01L9/04 ,  G01L9/00 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor pressure sensor for protecting the pressure reception surface of a diaphragm part by a protection film that is formed with a high density without any gap. SOLUTION: A manufacturing method consists of a piezoresistance formation process where piezoresistance 15 for converting a resistance change due to a pressure is converted into an electrical signal is formed at the side of one surface 11 of a silicon substrate 1, a diaphragm formation process where an etching resistance film 16 that is formed at the silicon substrate 1 is eliminated at the corresponding position of the piezoresistance 15 at the side of the other surface 12, anisotropic etching is performed and a recess 17 whose section is in trapezoid shape is formed, and a diaphragm part 2 with a pressure reception surface 21 for receiving the pressure of a fluid to be measured is formed, a protection film formation process where a protection film 18 that is heat-treated at a specific temperature and protects the pressure reception surface 21 is formed on the pressure reception surface 21 and the other surface 12 of a silicon substrate 1, and a metal wiring part formation process where a metal wiring part 3 that is made of a metal and is electrically connected to the piezoresistance 15 is formed at the side of one surface 11 of the silicon substrate 1.