公开(公告)号：JPH027577A

公开(公告)日：1990-01-11

申请号：JP15846488

申请日：1988-06-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMONARI SHIGEAKI ,  SAKAI ATSUSHI

IPC: H01L31/04

Abstract: PURPOSE:To obtain a multi-layer laminated type photoelectric converting device with a greater flexibility for the film thickness without changing materials forming each photoelectric converting layer by changing absorption coefficient of each photoelectric converting layer. CONSTITUTION:The film thickness of each photoelectric conversion layer is maintained to be 6600Angstrom and the absorption coefficient of each photoelectric conversion layer is changed by varying the formation temperature of the film, where a photo absorption rate of each layer is expressed by an equation and alpha1, alpha2, alpha3 and may be determined so that these values are the same. W indicates 6600Angstrom , alpha1, alpha2 and alpha3 do absorption coefficients of the first, second and third cells, and W1, W2 and W3 do the film thickness. When alpha1, alpha2 and alpha3 are determined, the following is obtained, namely alpha1=5X10 (cm ), alpha2=1.24X10 (cm ) and alpha3=2.77X10 (cm ). Formation temperature may be changed to achieve these absorption coefficients. Also, since the absorption coefficient becomes larger as the formation temperature becomes higher, the lowest layer, namely the layer formed initially becomes the hottest in terms of formation temperature. Thus, it does not produce any problem in terms of process to be realized.

公开(公告)号：JPH01235282A

公开(公告)日：1989-09-20

申请号：JP6234988

申请日：1988-03-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMONARI SHIGEAKI ,  SAKAI ATSUSHI

IPC: H01L27/15 ,  H01L27/04 ,  H01L29/78 ,  H01L31/12

Abstract: PURPOSE:To obtain a semiconductor device having constitution of high productivity and being proper even to miniaturization by laminating and forming a photo-detector onto an insulating film shaped onto the surface of a semiconductor substrate with a semiconductor switching element and laminating a light-emitting device onto said photo-detector through a transparent insulating layer. CONSTITUTION:A photovoltaic element array L2 in which a plurality of solar cells 12 are connected in series is laminated and shaped onto an insulating film 11 formed onto the surface of a semiconductor substrate 1 with a semiconductor switching element T1. Consequently, an electrical wiring process can be incorporated into a forming process for a photo-detector. Since a wiring forming method by a micro processing technique for the electrical wiring of a normal semiconductor element can be used for the electrical wiring process, soldering electrical wiring is unnecessitated, thus resulting in sufficient correspondence even to miniaturization. A thin-film light-emitting device L1 is laminated and shaped onto a transparent insulating film 20 formed onto the surface of the photovoltaic element array. That is, the photo-detector and the light-emitting device may be stacked gradually toward the upper section of the semiconductor substrate, and a process in which elements are formed onto the surface of an insulating substrate and the insulating substrate is turned upside down and other elements are shaped onto the rear and labor hours are required is unnecessitated.

公开(公告)号：JPH01137824A

公开(公告)日：1989-05-30

申请号：JP29632487

申请日：1987-11-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMONARI SHIGEAKI ,  SAKAI ATSUSHI

IPC: H03K17/78

Abstract: PURPOSE:To decrease the input power consumption without losing the switching characteristic by dividing currents flowing to a light emitting element into two stages, a current to turn on the switching element and a current holding the on-state to apply the switching. CONSTITUTION:The input current to the light emitting element L1 is divided into two stages, a current at the on-stage of a transistor(TR) T2 and a current at the holding-stage of the turning on of the TR T2 (stage II). The current at the stage I is selected larger than the current at the stage II to increase the gate current Ig when the TR T2 is turned on, thereby attaining high speed switching. Even when the input current is made small in the stage II, the decrease in the gate voltage is less and a gate voltage over a threshold voltage of the TR T2 is obtained with less input current. Thus, the power consumption at the input side is decreased.

公开(公告)号：JPH01137675A

公开(公告)日：1989-05-30

申请号：JP29632587

申请日：1987-11-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  TOMONARI SHIGEAKI

IPC: H01L31/04

Abstract: PURPOSE:To manufacture a photoelectric converter having a high efficiency in simple steps by composing a lower electrode of an aluminum film having unevenness on its surface. CONSTITUTION:A lower electrode 11 made of an aluminum film is formed by sputtering or a vacuum depositing method, etc., under the conditions of 200 deg.C or higher of substrate temperature, 1.0X10 -10 Torr of arriving vacuum degree, 100Angstrom /sec. or less of film growing velocity on an insulating substrate 10. After the above conditions are satisfied, suitable conditions are selected. Then, the aluminum film which has an uneven surface can be formed. An Al-Si diffusion preventing Ti film 12, a photoelectric conversion layer 13 and an upper transparent electrode 14 are sequentially formed on the electrode 11 formed in this manner. Thus, an uneven structure for enhancing its efficiency can be formed without necessity of complicate steps.

公开(公告)号：JPS63160211A

公开(公告)日：1988-07-04

申请号：JP30985186

申请日：1986-12-23

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： MATSUSHIMA CHOMEI ,  FUJIWARA TORU ,  SAKAI ATSUSHI ,  TAWARA RYOICHI

IPC: H01F1/08 ,  B22F1/00 ,  H01F1/057

Abstract: PURPOSE:To improve the strong coercive force of a permanent magnet by adding binder of predetermined volumetric ratio of magnetic alloy powder which contains as main ingredient predetermined atomic % of Nd, Dy, Tb, Fe and B, as main phase tetragonal compound of predetermined composition formula in a single crystal state of main phase with predetermined mean particle size. CONSTITUTION:This magnet contains 12-20 atomic % Nd, Dy and Tb (3-7% totally), 65-81% Fe and 6-15% B as main ingredients. Its composition formula is represented by R2Fe14 (where R is a rate earth element) of tegragonal compound as main phase. Its mean particle size is 1-50mum, and the magnet contains as main phase magnetic alloy fine powder of single crystal state and 50vol. % or less binder.

公开(公告)号：JPS6383201A

公开(公告)日：1988-04-13

申请号：JP22722886

申请日：1986-09-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： FUJIWARA TORU ,  MATSUSHIMA CHOMEI ,  SAKAI ATSUSHI ,  TAWARA RYOICHI

IPC: B22F1/00 ,  B22F9/04

Abstract: PURPOSE:To obtain a permanent magnet having excellent magnetic performance at a low cost by pulverizing a thin body obtd. by quick cooling of a molten metal consisting of a rare earth metal-iron-boron compsn. contg. a binder so as to have a prescribed average particle size or above. CONSTITUTION:The molten metal 1 formed by melting Nd, Fe and B contg. the binder for bonding magnetic powder at desired ratios is injected from a nozzle 2 onto a roll 3 under rotation in an arrow R direction in the case of using Nd as the above-mentioned rare earth metal (Fig.a). The molten metal 1 is quickly cooled on the surface of the roll 3 and is delivered in the form of the thin body in the arrow 6 direction. The permanent magnet is manufactured by using the powder formed by pulverizing such thin body with a ball mill to >=5mum average particle diameter. Plural rolls 4, 4 (Fig.b) or disk 5 (Fig.c) may be used in place of the above-mentioned single roll 3.

公开(公告)号：JPS6249360B2

公开(公告)日：1987-10-19

申请号：JP17484781

申请日：1981-10-30

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KONDO YUKIHIRO ,  OZAWA SUNAO ,  SAKAI ATSUSHI

IPC: H01H11/04 ,  C25D15/02

公开(公告)号：JPS6126205A

公开(公告)日：1986-02-05

申请号：JP14664484

申请日：1984-07-13

Applicant: Matsushita Electric Works Ltd

Inventor： SAKAI ATSUSHI

IPC: H01F41/02

CPC classification number: H01F41/0253

Abstract: PURPOSE:To prevent a variability of magnetic characteristics by filling a magnetic material including rare earth elements in a mold under a magnetic field which is parallel to a pressing direction to remove gaps among the powders and subsequently processing and shaping the material under the magnetic field parallel to the pressing direction. CONSTITUTION:The powder of the material of a magnet is put in a feeder 1 and it is enclosed air-tightly. A reticular filter 4 is arranged on a lower plane of the feeder to send the air for pressing. The feeder is driven into an outer frame 2 of a mold and is stopped above a punch 3 while a magnetic field is applied in parallel to the pressing direction. The air is injected into the feeder and the pressure is increased to spout the powder from holes of the filter 4. The feeder 1 is raised gradually to fill the powder to the regulated thickness. At this time, because the powder is orientated by the magnetic field till it reach the punch, the powder is spouted uniformly and a distribution of density also becomes uniform. After filling the powder, the feeder is removed and compression molding is done followed by sintering. At that time, a magnetic field in the pressing direction is not always necessary. By this constitution, the rare earth magnet having the uniform density of a molded body and magnetic characteristics can be obtained.

Abstract translation: 目的：为了防止磁特性的变化，通过在平行于挤压方向的磁场下将包含稀土元素的磁性材料填充在模具中，以除去粉末之间的间隙，随后在磁场平行处理和成形材料 按压方向。 构成：将磁铁的材料粉末放入进料器1中，气密封闭。 网状过滤器4布置在供料器的下平面上以送出空气进行压制。 进给器被驱动到模具的外框架2中，并且在按压方向平行地施加磁场的同时停止在冲头3的上方。 将空气注入进料器，并且增加压力以从过滤器4的孔喷出粉末。进料器1逐渐升高以将粉末填充至调节的厚度。 此时，由于粉末通过磁场定向直到冲头，所以粉末均匀地喷出并且密度分布也变得均匀。 填充粉末后，取出进料器，进行压缩成型，然后进行烧结。 此时，不一定需要按压方向的磁场。 通过这种结构，可以获得具有均匀的成型体密度和磁特性的稀土磁体。

公开(公告)号：JPS59182995A

公开(公告)日：1984-10-17

申请号：JP5717383

申请日：1983-03-31

Applicant: Matsushita Electric Works Ltd

Inventor： SAKAI ATSUSHI

IPC: C25D15/02 ,  C25D15/00

Abstract: PURPOSE: To increase the deposition rate of non-electrolytic particles by giving the flow moving circularly in a specified direction to a composite plating soln. in a plating cell formed in a ring, and placing a plating substrate so as to face the flow.
CONSTITUTION: A plating cell 3 is formed of an inside ring 1 and an outside ring 2 into a ring 4, and the flow moving circularly in a specified direction is given to the composite plating soln. consisting of a plating soln. forming a metallic matrix along the ring 4 and the particles suspended therein. The flow is given by blowing out air in a horizontal direction through a blow port 5 provided on, for example, the base of the cell 3. A plating substrate 6 is immersed in the composite plating soln. in the direction facing the flow. Then the non-electrolytic particles move circularly together with the above-described flow and therefore the particles collide perpendicularly against the substrate 6 and deposit thereon as the metallic matrix deposits. The number of the particles colliding against the substrate 6 is thus increased as compared to the random movement of the particles by agitating with a pump, etc.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：通过使流动沿指定方向循环移动到复合电镀溶液中来增加非电解质颗粒的沉积速率。 在形成在环中的电镀单元中，并且将电镀基板放置成面对流动。 构成：电镀槽3由内环1和外环2形成为环4，向复合电镀溶液赋予向规定方向圆周移动的流动。 由电镀溶液组成。 沿着环4形成金属基体并且悬浮在其中的颗粒。 通过在例如电池3的基体上设置的吹出口5沿水平方向吹出空气来给出流动。将电镀基板6浸渍在复合电镀溶液中。 在面向流动的方向。 然后，非电解颗粒与上述流动一起循环移动，因此颗粒垂直于衬底6碰撞并沉积在金属基体上。 因此与通过用泵等搅拌的颗粒的随机移动相比，与基板6碰撞的颗粒的数量增加。

公开(公告)号：JPS5925999A

公开(公告)日：1984-02-10

申请号：JP13497682

申请日：1982-07-31

Applicant: Matsushita Electric Works Ltd

Inventor： SAKAI ATSUSHI

IPC: H01H11/04 ,  C25D15/02 ,  H01B1/02 ,  H01H1/02 ,  H01H1/023

Abstract: PURPOSE: To manufacture a Pd-base electrical contact material with reduced or no catalytic activity, by embedding palladium oxide in a simple substance of Pd forming a matrix.
CONSTITUTION: Granular palladium oxide is added to a plating soln. contg. Pd ions. By applying a voltage between an anode and a cathode immersed in the plating bath. Pd ions are deposited in the form of a metallic simple substance, and simultaneously palladium oxide is precipitated in the simple substance of Pd. The palladium oxide precipitated in the simple substance reduces the amount of the simple substance forming the surface of a contact, so the catalytic activity of the contact surface can be reduced or eliminated.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：通过在形成基质的Pd的单一物质中包埋氧化钯来制造具有降低或不具有催化活性的Pd基电接触材料。 构成：将颗粒状氧化钯加入镀液中。 contg。 Pd离子。 通过在浸入电镀槽中的阳极和阴极之间施加电压。 Pd离子以金属单质的形式沉积，同时Pd的单质也沉淀出氧化钯。 在单体中析出的氧化钯减少形成接触面的单体的量，可以降低或消除接触面的催化活性。