公开(公告)号：JP2008184629A

公开(公告)日：2008-08-14

申请号：JP2007017074

申请日：2007-01-26

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： SHIRAI TAKEO ,  HAYAZAKI YOSHIKI ,  MATSUSHIMA CHOMEI ,  SI-BEI XIONG ,  YOSHIHARA TAKAAKI ,  YAMAUCHI NORIHIRO

IPC: C23C14/22 ,  C23C14/08 ,  C23C16/48 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/316 ,  H01L41/39 ,  H03H3/02 ,  H03H9/17 ,  H03H9/54

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a PZT thin film, by which a PZT thin film high in orientation can be easily manufactured, a low cost BAW resonator having the PZT thin film high in orientation as a piezoelectric thin film, and a filter for UWB using the resonator. SOLUTION: In the manufacturing of the PZT thin film 30a, the PZT thin film 30a is formed through crystal growth by a sputtering method comprising irradiating the outermost surface Sur being a growth surface on the main surface side of a substrate 1 for crystal growth with an electron beam emitted from an electron gun 2. Thereby, the PZT thin film 30a which is high in orientation and in which the direction of spontaneous polarization is made uniform can be formed through crystal growth by the interaction between the electric field caused by electrons 4 in the vicinity of the outermost surface Sur and the spontaneous polarization of PZT particles 3 sputtered toward the outermost surface Sur during crystal growth. If the method for manufacturing the PZT thin film 30a is utilized as a method for forming a piezoelectric thin film for the BAW resonator, the BAW resonator and the filter for UWB can be obtained at low cost. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种制造PZT薄膜的方法，通过该方法可以容易地制造取向度高的PZT薄膜，具有取向高的PZT薄膜作为压电薄膜的低成本BAW谐振器 薄膜和使用谐振器的UWB滤波器。 解决方案：在PZT薄膜30a的制造中，PZT薄膜30a通过溅射法通过晶体生长形成，包括：在基底1的主表面侧照射作为生长面的最外面Sur 由电子枪2发射的电子束生长。因此，取向高且自发极化方向均匀的PZT薄膜30a可以通过晶体生长通过由 在最外表面Sur附近的电子4和在晶体生长期间溅射到最外表面Sur的PZT颗粒3的自发极化。 如果将PZT薄膜30a的制造方法用作形成用于BAW谐振器的压电薄膜的方法，则可以以低成本获得BAW谐振器和UWB用滤波器。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007037007A

公开(公告)日：2007-02-08

申请号：JP2005221007

申请日：2005-07-29

Applicant: Matsushita Electric Works Ltd ,  Osaka Prefecture ,  Proassist:Kk ,  大阪府 ,  松下電工株式会社 ,  株式会社プロアシスト

Inventor： TANAKA TSUNEHISA ,  RI SHIYOUBOKU ,  KAWADA HIROSHI ,  SI-BEI XIONG ,  MATSUSHIMA CHOMEI

IPC: H04R17/02 ,  H01L41/08 ,  H01L41/187 ,  H04R17/00

Abstract: PROBLEM TO BE SOLVED: To provide a piezoelectric sound wave sensor more improved in sensing sensitivity than heretofore.
SOLUTION: It is considered that parts of a lower electrode 3, a piezoelectric film 4, an upper electrode 5, and an oxide film 6 existing on the surface of a diaphragm part 1 give the effect of the residual stress on the bent of the diaphragm part 1 and parts of the lower electrode 3, the piezoelectric film 4, the upper electrode 5, and the oxide film 6 give less effect thereon. Thus, provision of the upper electrode 5 and the piezoelectric film 4 on the surface of the diaphragm part 1 within a range narrower than the diaphragm part 1 reduces the effect of the residual stress of the upper electrode 5 and the piezoelectric film 4 given onto the diaphragm part 1 in comparison with prior arts wherein the upper electrode 5 and the piezoelectric film 4 are provided to the same area as that of the diaphragm part 1 or to an area broader than the diaphragm part 1 so that the diaphragm part 1 can easily be bent, resulting in that the sensing sensitivity of the piezoelectric sound wave sensor can be enhanced more than that of prior arts.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种比以前更加改进的感测灵敏度的压电声波传感器。 解决方案：认为存在于隔膜部件1的表面上的下电极3，压电膜4，上电极5和氧化物膜6的部分产生残余应力对弯曲的影响 隔膜部分1和下电极3，压电膜4，上电极5和氧化物膜6的部分的影响较小。 因此，在膜片部1的表面上设置上部电极5和压电膜4的范围比隔膜部1窄的范围，能够降低上部电极5和压电膜4的残留应力的影响 隔膜部分1与现有技术相比，其中上电极5和压电膜4设置在与隔膜部分1相同的区域上，或者设置在比膜片部分1更宽的区域上，使得隔膜部分1可以容易地 弯曲，导致压电声波传感器的感测灵敏度可以比现有技术更强大。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005134451A

公开(公告)日：2005-05-26

申请号：JP2003367346

申请日：2003-10-28

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： TERAUCHI RYOICHI ,  TANAKA KENICHIRO ,  KUBO MASAO ,  MATSUSHIMA CHOMEI

IPC: G02B6/122 ,  G02B6/12

Abstract: PROBLEM TO BE SOLVED: To reduce optical propagation loss in the optical path along the substrate thickness direction of an optic/electric mixed mounting substrate. SOLUTION: An optic/electric mixed mounting substrate 1 is provided with an electric wiring 3 which is formed on the surface of a substrate 2, an optical wiring (a waveguide core) 4 which is formed inside the substrate 2, a vertical direction waveguide 5 which guides optical signals along the thickness direction of the substrate 2 and an optical path changing structure 6 which is used to optically couple the optical wiring 4 and the vertical direction waveguide 5. The vertical direction waveguide 5 is formed by conducting partial material reform at a point P where laser light beams LB are irradiated using the electric wiring 3 as a reference for positioning. The optical path changing structure 6 is formed in a similar manner as in the case of the vertical direction waveguide 5. The vertical direction waveguide 5 is formed without conducting a mechanical elimination process and a material filling process. Therefore, the optic/electric mixed mounting substrate, in which conventional optical propagation loss caused by bubble generation due to resin filling and resin hardening deformation or the like is reduced, is obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了减小光/电混合安装基板沿着基板厚度方向的光路中的光传播损耗。 解决方案：光/电混合安装基板1设置有形成在基板2的表面上的电布线3，形成在基板2内的光布线（波导芯）4，垂直 沿着基板2的厚度方向引导光信号的方向波导5和用于光耦合光配线4和垂直方向波导5的光路改变结构6.垂直方向波导5通过导电部分材料 在使用电线3照射激光束LB的点P处进行重新定位。 光路改变结构6以与垂直方向波导5的情况相似的方式形成。垂直方向波导5形成为不进行机械消除处理和材料填充处理。 因此，获得由于树脂填充和树脂硬化变形等引起的由气泡产生引起的常规光传播损耗的光/电混合安装基板的光学/电混合安装基板。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005099521A

公开(公告)日：2005-04-14

申请号：JP2003334220

申请日：2003-09-25

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： KASAI YUKI ,  MATSUSHITA YUKIO ,  NEMOTO TOMOAKI ,  KURAI HIROYUKI ,  KODERA KOHEI ,  MATSUSHIMA CHOMEI ,  HASHIMOTO SHINJI ,  YAGYU HIROYUKI ,  NAKASHIBA TORU

IPC: G02B6/30 ,  G02B6/122 ,  H04B10/25 ,  H04B10/2507 ,  H04B10/2581 ,  H04B10/02 ,  H04B10/12 ,  H04B10/13 ,  H04B10/135 ,  H04B10/14 ,  H04B10/18

Abstract: PROBLEM TO BE SOLVED: To provide a bidirectional optical transmission device that transmits and receives optical signals in two directions by using a single core optical fiber as a transmission medium, the optical transmission device being capable of suppressing interference and crosstalk between an optical signal transmitted to the outside through the optical fiber and an optical signal transmitted from the optical fiber. SOLUTION: The optical fiber has in a clad 4 a light-reception-side core 3b where the optical signal incident from the optical fiber 11 is guided and a light-emission-side core 3a where the optical signal incident on the optical fiber 11 is guided. The light-reception-side core 3b is separated from the light-emission-side core 3a. Thus, the structure of separating the light-reception-side core 3b from light-emission-side core 3a can prevent the transmit and receive signals from interfering with each other. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种通过使用单芯光纤作为传输介质在两个方向上发送和接收光信号的双向光传输装置，该光传输装置能够抑制光信号之间的干扰和串扰 通过光纤传输到外部的信号和从光纤传输的光信号。 解决方案：光纤在包层4中具有从光纤11入射的光信号被引导的光接收侧芯3b和光信号入射到光发射侧芯3a上的发光侧芯3a 纤维11被引导。 光接收侧芯3b与发光侧芯3a分离。 因此，将光接收侧芯3b与发光侧芯3a分离的结构可以防止发送和接收信号彼此干扰。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH11237279A

公开(公告)日：1999-08-31

申请号：JP3778198

申请日：1998-02-19

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TANIGUCHI MAKOTO ,  IGARI MOTOO ,  MATSUSHIMA CHOMEI ,  YAGYU HIROYUKI ,  MATSUMURA YOSHIHIRO

IPC: G01J1/02 ,  G01J5/02 ,  G01J5/34

Abstract: PROBLEM TO BE SOLVED: To reduce a popcorn noise being generated by thermal stress and stress concentration without increasing cost. SOLUTION: A pyroelectric chip 1 is nearly octagonal, and electrodes 40a, 40b, 41a, and 41b are formed on front and reverse surfaces along two opposing sides, thus reducing the contact area between a circuit side substrate and a support part and decreasing the occurrence of thermal stress on the pyroelectric chip. Also, by forming a corner part 1a at both sides that do not include the two sides in a circular shape, the occurrence of chipping and microcrack that frequently is generated at the corner part la on cutting from the pyroelectric wafer is prevented.

公开(公告)号：JPH08297141A

公开(公告)日：1996-11-12

申请号：JP10390395

申请日：1995-04-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： YOSHIDA KEIICHI ,  MATSUSHIMA CHOMEI

IPC: G01P15/125 ,  H01L29/84

Abstract: PURPOSE: To provide an acceleration sensor having a simple structure, easy to manufacture, having an improved yield, and capable of mass-produced. CONSTITUTION: A ferroelectric substance 5 movable in the plane direction of electrodes is arranged between a pair of flat plate-like upper electrode 1 and lower electrode 2 faced to each other. The prescribed voltage is applied between the upper electrode 1 and the lower electrode 2. The change of the electrostatic capacity between the upper electrode 1 and the lower electrode 2 is captured to detect acceleration when the ferroelectric substance 5 jumps out to the outside from the gap between the upper electrode 1 and the lower electrode 2.

公开(公告)号：JPH08233850A

公开(公告)日：1996-09-13

申请号：JP3813495

申请日：1995-02-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： YOSHIDA KEIICHI ,  MATSUSHIMA CHOMEI

IPC: G01P15/02 ,  G01P15/08 ,  G01P15/12

Abstract: PURPOSE: To obtain a semiconductor acceleration sensor which can be used in a high-temperature region by using a thermistor instead of a piezo resistor and in which the temperature compensation is not required by always maintaining the surrounding temperature of a cantilever constant. CONSTITUTION: The semiconductor acceleration sensor comprises a cantilever 6 formed on a silicon wafer, and a pair of heaters (an upper heater 4 and a lower heater 5) made of a thermistor 7 formed on the cantilever 6, so disposed as to sandwich the cantilever 6 therebetween, disposed as to oppose via a predetermined distance and formed with a predetermined temperature gradient.

公开(公告)号：JPH0894594A

公开(公告)日：1996-04-12

申请号：JP23357194

申请日：1994-09-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： ICHIHARA TSUTOMU ,  MATSUSHIMA CHOMEI ,  SAKAI ATSUSHI ,  AIZAWA KOICHI ,  YOSHIDA KEIICHI

IPC: G01N29/00 ,  G01N29/20

Abstract: PURPOSE: To provide a structure of a small humidity sensor which eliminates the need for maintenance work such as thermal refreshing and has high measuring accuracy and short response time. CONSTITUTION: This ultrasonic humidity sensor has a plurality of vibrators 11a to 11e differing in resonance frequency, uses the vibrators 11 a to 11e in transmitting and receiving ultrasonic waves, and uses a signal processing circuit portion 14 to perform signal processing such as amplification and then measure the damping rates of the ultrasonic waves of different frequencies, thereby measuring the humidity of gas. Also, the sensor measures the temperature of the gas by measuring the propagation time of the ultrasonic waves. The use of the plural ultrasonic waves of different frequencies eliminates the need for maintenance work such as thermal refreshing and results in enhanced measuring accuracy and reduced response time.

公开(公告)号：JPH07298394A

公开(公告)日：1995-11-10

申请号：JP8492794

申请日：1994-04-22

Applicant: JAPAN RES DEV CORP ,  MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  MATSUSHIMA CHOMEI ,  AIZAWA KOICHI ,  KUNUGIHARA TSUTOMU ,  YOSHIDA KEIICHI

IPC: G01H11/08 ,  H01L41/09 ,  H01L41/22 ,  H04R17/00

Abstract: PURPOSE:To obtain the vibration detection device which can be made high in sensitivity without causing the curvature of a cantilever and the peeling of a lower electrode and the manufacturing method which shortens the manufacture time and reduces the cost. CONSTITUTION:An intermediate insulating film 5 is formed completely covering a piezoelectric thin film 4 and the lower electrode 3 and also eliminating the exposed part of the piezoelectric thin film 3 and lower electrode 3, and an opening 5a which electrically connects an upper electrode 6 and the piezoelectric thin film 4 together is formed. The upper electrode 6 is formed entirely from the base to the tip part of the cantilever 13.

公开(公告)号：JPS6442501A

公开(公告)日：1989-02-14

申请号：JP19744087

申请日：1987-08-07

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： FUJIWARA TORU ,  MATSUSHIMA CHOMEI ,  TAWARA RYOICHI

IPC: B22F1/00 ,  C21D6/00 ,  H01F41/02

Abstract: PURPOSE:To obtain a permanent magnet having excellent magnetic characteristics with good workability at a low cost by bonding magnetic alloy powder or rear earths-iron-boron having high coercive force and large orientation degree of magnetic fields by a binder. CONSTITUTION:A thin strip of 50-60mum thickness is produced from an R-Fe-B (R is rear earths) alloy(for example, Nd13Fe82B5). This thin strip is roughly ground to 50mum average grain size and is further pulverized to, for example, 3mum average grain size by a ball mill. The fine powder obtd. in such a manner is heat-treated together with a reducing agent consisting of metal, for example, Ca at 600-800 deg.C. The magnetic powder obtd. by separating the Ca after this heat treatment is pressed in a magnetic field and is bonded by a binder consisting of an epoxy resin, etc. The high-performance bonded magnet having larger orientation degree than heretofore is thereby obtd.