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    VERFAHREN ZUR HERSTELLUNG EINER LEUCHTDIODE
    31.
    发明公开
    VERFAHREN ZUR HERSTELLUNG EINER LEUCHTDIODE 有权

    公开(公告)号：EP2483914A1

    公开(公告)日：2012-08-08

    申请号：EP10763346.3

    申请日：2010-09-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： STAUSS, Peter ,  DRECHSEL, Philipp

    IPC: H01L21/02 ,  H01L33/00

    CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639

    Abstract: A method is provided for producing a light-emitting diode with the following steps: providing a carrier substrate (1), which has a silicon surface (1a), - depositing a series of layers (100) on the silicon surface (1a) in a direction of growth (R), and - depositing a light-emitting diode structure (16) on the series of layers (100), wherein - the series of layers (100) includes a GaN layer (5), which is formed with gallium nitride, - the series of layers includes a masking layer (12), which is formed with silicon nitride, and - the masking layer (12) follows at least part of the GaN layer (5) in the direction of growth (R).

    Abstract translation: 提供一种用于制造发光二极管的方法，其具有以下步骤：提供具有硅表面（1a）的载体衬底（1）;在硅表面（1a）上沉积一系列层（100） 生长方向（R），以及 - 在所述一系列层（100）上沉积发光二极管结构（16），其中 - 所述一系列层（100）包括GaN层（5），所述GaN层 氮化镓， - 所述一系列层包括用氮化硅形成的掩模层（12），并且 - 所述掩模层（12）在生长方向（R）上跟随所述GaN层（5）的至少一部分， 。

    OPTOELEKTRONISCHER HALBLEITERCHIP MIT EINER MEHRFACHQUANTENTOPFSTRUKTUR
    32.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERCHIP MIT EINER MEHRFACHQUANTENTOPFSTRUKTUR 有权
    具有更多量子阱结构的光电子半导体芯片

    公开(公告)号：EP2208240A1

    公开(公告)日：2010-07-21

    申请号：EP08801326.3

    申请日：2008-09-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： STAUSS, Peter ,  PETER, Matthias ,  WALTER, Alexander

    IPC: H01L33/00 ,  H01S5/343

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3086 ,  H01S5/34 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic semiconductor chip having an active zone (20), comprising a multiple quantum well structure provided for the production of electromagnetic radiation, having a plurality of sequential quantum well layers (210, 220, 230). The multiple quantum well structure comprises at least one first quantum well layer (210) that is doped in an n-conductive fashion and disposed between two barrier layers (250) doped in an n-conductive fashion and adjacent to the first quantum well layer. Said quantum well structure comprises a second quantum well layer (220) that is undoped and is disposed between two barrier layers (250, 260) adjacent to the second quantum well layer, one of said layers being doped and the other being undoped. In addition, the multiple quantum well structure comprises at least one third quantum well layer (230) that is undoped and disposed between two undoped barrier layers (260) adjacent to the third quantum well layer.

    STRAHLUNGSDETEKTOR MIT EINSTELLBARER SPEKTRALER EMPFINDLICHKEIT
    34.
    发明公开
    STRAHLUNGSDETEKTOR MIT EINSTELLBARER SPEKTRALER EMPFINDLICHKEIT 审中-公开
    具有可调光谱灵敏度辐射检测器

    公开(公告)号：EP2054705A1

    公开(公告)日：2009-05-06

    申请号：EP07847523.3

    申请日：2007-11-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： JAEGER, Arndt ,  STAUSS, Peter ,  STREUBEL, Klaus ,  KUHLMANN, Werner

    IPC: G01J1/42 ,  G01J3/36

    CPC classification number: G01J1/4228 ,  G01J1/0488 ,  G01J3/36 ,  G01J3/46 ,  G01J3/465 ,  G01J3/50 ,  G01J3/51 ,  G01J3/513 ,  G01J2003/507 ,  H01L31/105

    Abstract: The invention specifies a radiation detector (1) having a detector arrangement (2), which has a plurality of detector elements (4, 5, 6) which are used to obtain a detector signal (DS) during operation of the radiation detector, and having a control apparatus (3), wherein the detector elements each have a spectral sensitivity distribution (400, 500, 600) and are suitable for generating signals (S4, S5, S6), at least one detector element contains a compound semiconductor material and this detector element is designed to detect radiation in the visible spectral range, the radiation detector is designed in such a manner that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels (420, 520, 620) of the radiation detector, a channel signal (K4, K5, K6) which is assigned to the respective sensitivity channel can be generated in the sensitivity channels using the detector elements, and the control apparatus is designed in such a manner that the contributions of different channel signals to the detector signal of the radiation detector are controlled differently.

    HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
    37.
    发明公开
    HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS 有权

    公开(公告)号：EP2609632A1

    公开(公告)日：2013-07-03

    申请号：EP11748340.4

    申请日：2011-08-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： STAUSS, Peter ,  DRECHSEL, Philipp ,  HERTKORN, Joachim

    IPC: H01L33/00 ,  H01L33/12

    Abstract: The invention relates to a semiconductor component having a semiconductor layer sequence (2) made of a nitridic composite semiconductor material on a substrate, wherein the substrate (1) comprises a silicon surface facing the semiconductor layer sequence (2), and the semiconductor layer sequence (2) comprises an active region (21) and at least one intermediate layer (3) made of an oxygen-doped AlN composite semiconductor material between the substrate (1) and the active region (21). The invention further relates to a method for producing a semiconductor component.

    Abstract translation: 本发明涉及在衬底上具有由氮化物复合半导体材料制成的半导体层序列（2）的半导体部件，其中衬底（1）包括面对半导体层序列（2）的硅表面，并且半导体层序列 （2）包括有源区（21）和在衬底（1）和有源区（21）之间由氧掺杂AlN复合半导体材料制成的至少一个中间层（3）。 本发明还涉及用于制造半导体部件的方法。

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