公开(公告)号：WO2011119379A2

公开(公告)日：2011-09-29

申请号：PCT/US2011/028549

申请日：2011-03-15

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  TAO, Yi ,  ZHONG, Fan ,  SASAGAWA, Teruo

Inventor： TAO, Yi ,  ZHONG, Fan ,  SASAGAWA, Teruo

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/047 ,  G02B5/284 ,  G02B26/001 ,  G09G3/3466

Abstract: Mechanical layers and methods of shaping mechanical layers are disclosed. In one embodiment, a method includes depositing a support layer (85), a sacrificial layer (84) and a mechanical layer (34) over a substrate (20), and forming a support post (60) from the support layer. A kink (90) is formed adjacent to the support post in the mechanical layer. The kink comprises a rising edge (91) and a falling edge (92), and the kink is configured to control the shaping and curvature of the mechanical layer upon removal of the sacrificial layer.

Abstract translation: 公开了机械层和机械层成型方法。 在一个实施例中，一种方法包括在衬底（20）上沉积支撑层（85），牺牲层（84）和机械层（34），以及从支撑层形成支撑柱（60）。 在机械层中邻近支撑柱形成扭结（90）。 扭结包括上升沿（91）和下降缘（92），并且扭结构造成在去除牺牲层时控制机械层的成形和曲率。

公开(公告)号：WO2007041302A3

公开(公告)日：2007-04-12

申请号：PCT/US2006/038084

申请日：2006-09-29

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： LEWIS, Alan, G. ,  KOTHARI, Manish ,  BATEY, John ,  SASAGAWA, Teruo ,  TUNG, Ming-Hau ,  U'REN, Gregory, D. ,  ZEE, Stephen

IPC: B81B7/00 ,  G02B26/00

Abstract: A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode (16) and a movable layer (14) within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode (14) and a mechanical layer (92) of the device. In an embodiment, this conductive layer is a sacrificial layer (60) that is subsequently removed to form a cavity (19) between the electrode (16) and the movable layer (14). The sacrificial layer (60) is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer (14) that preferably comprises aluminum.