公开(公告)号：US20200006434A1

公开(公告)日：2020-01-02

申请号：US16455791

申请日：2019-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： HUI-JUNG KIM ,  KISEOK LEE ,  KEUNNAM KIM ,  YOOSANG HWANG

IPC: H01L27/24 ,  H01L45/00

Abstract: Disclosed is a variable resistance memory device including a first conductive line extending in a first direction parallel to a top surface of the substrate, memory cells spaced apart from each other in the first direction on a side of the first conductive line and connected to the first conductive line, and second conductive lines respectively connected to the memory cells. Each second conductive line is spaced apart in a second direction from the first conductive line. The second direction is parallel to the top surface of the substrate and intersects the first direction. The second conductive lines extend in a third direction perpendicular to the top surface of the substrate and are spaced apart from each other in the first direction. Each memory cell includes a variable resistance element and a select element that are positioned at a same level horizontally arranged in the second direction.