Abstract:
PROBLEM TO BE SOLVED: To provide an electro-optical device in which a light emitting element is not denaturalized by moisture existing in the display, and an electronic equipment. SOLUTION: A reduction layer 17 is provided so as to surround the surroundings of pixel electrodes 16 on a second interlayer insulating layer 12B in a light emitting panel 2. Further, a sealing layer 22 is constituted of silicon nitride (SiNx) formed by using a high density plasma film-forming method. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an organic EL device having a long life without causing deterioration of functional layers such as a light emitting layer and an electron injecting layer, and also to provide a manufacturing method thereof. SOLUTION: The organic EL device of this invention is of a top-emission type in which a pixel electrode 111, a functional layer 110 having at least a light emitting layer made of an organic material, and a cathode 12 are disposed in this order on a substrate 2, and the cathode 12 has a light transmitting property. The organic EL device is characterized in that the cathode 12 includes at least a titanium nitride layer. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an organic EL device composed by adhering the side of a negative electrode formed of an inorganic material to the side of a luminescent layer formed of an organic material, thereby preventing the deterioration of the luminescent layer due to oxygen or moisture to improve durability; to provide its manufacturing method and an electronic apparatus equipped with it. SOLUTION: This organic EL device is composed by arranging, on a substrate, a first electrode 23, a function layer formed of an organic material and having at least a luminescent layer 60, and a second electrode 50 in that order. The luminescent layer 60 is formed in pixel regions surrounded by barrier ribs 221 formed of an organic material. A closely-attached layer 65 formed of an organic silicon compound or an organic titanium compound is formed on the surface(s) of barrier ribs 221 and/or the function layer. The second electrode 50 formed of an inorganic material is formed on the surface of the adhered layer 65. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an organic EL device, as well as its manufacturing method and an electronic apparatus, with improved contrast, preventing the degradation of display quality due to fluctuation in sizes of ribs, and thereby heightening the display quality. SOLUTION: The organic EL device is provided with a pixel electrode 23 and an opposed electrode 50 opposed to it on a base body, between which a luminous layer is formed. The luminous layer 60 is arranged at a pixel area surrounded by the ribs 221. The rib 221 is formed by the patterning of a black color layer of a black-color sensitive film having the black color layer. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To increase the visibility in the open air. SOLUTION: At least one of the surfaces of a display panel is made a display surface, and the surface is provided with at least a first reflection layer 3 and a second reflection layer 4 on a substrate 1. The layer 3 is formed to match every pixel and is made of titanium (Ti), titanium nitride or titanium-tungsten alloy. The layer 4 is deposited on the layer 3 by using indium tin oxide (ITO), indium zinc oxide or gallium zinc oxide as raw material. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To solve a problem of the components of an ink jet recorder that the nozzle hole of a nozzle plate or the through hole of a semiconductor device can not be bored stably. SOLUTION: Etching resistant films, i.e., silicon nitride films 13 and 14, are formed by a CVD system on a 200 micron thick (100) face orientation n-type single crystal silicon substrate 1 becoming a nozzle plate. The silicon nitride film 14 is then removed by dry etching and the silicon nitride film 13 is subjected to photoetching at the parts 12 corresponding to nozzle holes. Subsequently, the parts 12 corresponding to nozzle holes are bored by anodizing thus completing a nozzle plate. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an etching method which is capable of forming micro-size patterns with high perpendicularity and high accuracy. SOLUTION: A workpiece 2 formed with resist patterns is etched while high- pressure gas and an aqueous ferric chloride solution are mixed and sprayed. At this time, the workpiece is etched under the conditions under which (1) a distance of spraying is =0.3 MPa, (3) the temperature on the surface of the workpiece 2 at the time of spraying of the aqueous ferric chloride solution is >=30 deg. and (4) the concentration of the aqueous ferric chloride solution is >=40 deg. Baume., by which the etching with the excellent dimensional accuracy and perpendicularity of a cross-sectional shape is made possible.
Abstract:
PURPOSE:To reduce production cost for a bump electrode by forming an intermediate metallic layer through an electroless plating process, covering the area other than that for an electrode with a photosensitive resin, and forming a contact metallic layer, at the time of manufacturing through plating a bump electrode to be used for minute mounting of a semiconductor element. CONSTITUTION:A conductive layer 3 composed of aluminum, an intermediate metallic layer 5, a gold layer 6, and a contact metallic layer 7 are laminated successively on a silicon substrate 1 forming a circuit.
Abstract:
PURPOSE:To realize the prevention of damage to a substrate at the time of connection by inserting copper in the bump electrode of a semiconductor element, and to reduce the dispersion of the height of the bump electrode by plating the upper section of copper with solder. CONSTITUTION:A nickel-phosphorus layer 4 and a copper layer 5 are laminated on an aluminum layer 2 on a silicon substrate 1, thus forming a bump electrode.
Abstract:
PURPOSE:To enhance sensitivity and to extend a life by effecting an electrolysis in an aq. micell soln. to break the micell and to deposit enzyme. CONSTITUTION:A nickel film 2 and an indium oxide film 3 are formed by sputtering vapor deposition method on a sapphire substrate 1 which is an insulating substrate and after an epoxy resin 4 is formed thereon, a lamination pattern is formed by a photolithographic method to form an electrode. An enzyme immobilized layer 5 is formed on the electrode surface to form the glucose enzyme sensor. The film 2 is a coated conductor and the film 3 has an oxidation reduction function. The immobilized layer 5 is fixed with coated enzyme. The electrolysis is, therefore, effected by the aq. micell soln. prepd. by insolubilizing the enzyme subjected to a water insolubilization treatment in the aq. micell of a surfactant to be charged by electrolysis. The immobilized layer 5 is formed by a method of breaking the micell by the electrolytic oxidation and depositing the enzyme. The concn. of a special chemical material is converted to the corresponding concn. of hydrogen ions by this immobilized layer 5 and the concn. of the hydrogen ions is converted by the film 3 to the corresponding potential.