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    METHOD OF PRODUCING PHOSPHORUS-DOPED SILICON MONOCRYSTALS
    35.
    发明专利
    METHOD OF PRODUCING PHOSPHORUS-DOPED SILICON MONOCRYSTALS 未知

    公开(公告)号：CA1085703A

    公开(公告)日：1980-09-16

    申请号：CA263236

    申请日：1976-10-13

    Applicant: SIEMENS AG

    Inventor： KELLER WOLFGANG ,  KRAMER HERBERT ,  REUSCHEL KONRAD

    IPC: C30B13/12 ,  C30B13/06 ,  C30B29/06 ,  H01L21/18 ,  B01J17/40

    Abstract: A process is described for the production of phosphorus-doped silicon monocrystals with a peripheral depletion of the dopant directed in the radial direction, in which a silicon monocrystalline rod provided with a homogeneous phosphorus doping is subjected to a zone melting process, for depletion of the dopant in a vacuum and for an enrichment of the dopant in a doping gas atmosphere, the molten zone being annular and having a depth set in accordance with the desired peripheral depletion or enrichment zone to be less than the rod radius.

    36.
    发明专利
    未知

    公开(公告)号：DK138779B

    公开(公告)日：1978-10-30

    申请号：DK157067

    申请日：1967-03-28

    Applicant: SIEMENS AG

    Inventor： KELLER WOLFGANG ,  REUSCHEL KONRAD

    IPC: C30B13/28 ,  B01J17/10

    Abstract: 1,175,449. Floating zone-melting. SIEMENS A.G, 12 June, 1967 [15 June, 1966], No. 27106/67. Heading B1S. In the floating zone-melting of a silicon rod attached to a seed using an induction coil, the coil is eccentrically disposed with respect to the supply rod and the recrystallized rod for at least part of the operation. The coil may be reciprocated by rectilinear or circular movement of its axis at e.g. 9 alternations per minute between maximum and minimum eccentricity. The speed of passage of the molten zone may be 2 mm/min. The recrystallized rod may be rotated at 20 rpm. The cross-sectional area of the seed may be up to one tenth that of the supply rod. In steady operation, the diameter of both the supply and recrystallized rods may be larger than that of the coil. The supply and recrystallized rods may be on the same axis (Fig. 2) or may be offset (Fig. 5).

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