公开(公告)号：GB2397597B

公开(公告)日：2006-08-09

申请号：GB0329066

申请日：2003-12-16

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART

IPC: E21B10/46 ,  C04B35/5831 ,  C22C26/00 ,  E21B10/56 ,  E21B10/567

公开(公告)号：GB2422394A

公开(公告)日：2006-07-26

申请号：GB0601440

申请日：2006-01-25

Applicant: SMITH INTERNATIONAL

Inventor： BELNAP JOHN DANIEL ,  MIDDLEMISS STEWART

IPC: E21B10/56 ,  C22C26/00 ,  E21B10/46 ,  E21B10/52

Abstract: A cutting element includes an upper most layer 32, having an outer region 34 which is free from catalyst material. Said upper most region 34 being formed from diamond, cubic boron nitride or mixtures thereof. An intermediate layer 38, consisting bonded crystals of ultrahard material is also present which has a wear resistance less than the upper most layer 32. In an alternative embodiment, said outer region 34 may have increased thermal stability and be formed from diamond grains greater than 20 micrometers.

公开(公告)号：IE20030901A1

公开(公告)日：2005-06-15

申请号：IE20030901

申请日：2003-12-03

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART

IPC: C04B35/5831 ,  E21B10/56 ,  E21B10/567 ,  C22C26/00 ,  C22C29/00 ,  E21B10/46

Abstract: A cutting element and bit incorporating the cutting element is provided, as well as a method for forming the same. The cutting element includes an ultra hard material layer including chromium and carbon and exhibiting increased abrasion resistance without sacrificing toughness. The method for manufacturing the cutting element includes providing a layer of ultra hard material particles and chromium carbide over the substrate, and then sintering to form the cutting element.

公开(公告)号：GB2408735A

公开(公告)日：2005-06-08

申请号：GB0426586

申请日：2004-12-03

Applicant: SMITH INTERNATIONAL

Inventor： BELNAP JOHN DANIEL ,  MIDDLEMISS STEWART ,  GRIFFO ANTHONY ,  OLDHAM THOMAS W ,  KEMBAIYAN KUMAR THIPPAIYAGOWDE

IPC: B01J3/06 ,  B22F7/06 ,  B24D3/00 ,  B24D11/00 ,  C01B31/06 ,  C04B35/52 ,  C04B35/645 ,  C22C26/00 ,  E21B10/00 ,  E21B10/56 ,  E21B10/567 ,  E21B10/573

Abstract: A polycrystalline diamond material comprises a first phase 12 of bonded together diamond crystals and a second phase 14 of a reaction product between a binder/catalyst material used to facilitate diamond bonding and a material that reacts with the binder/catalyst material. The reaction product occurs at interstitial regions between diamond crystals and has a coefficient of thermal expansion that is closer to that of the bonded diamond crystals that the CTE for the binder/catalyst material alone. The binder/catalyst may be a group VIII element such as cobalt and the reacting material may be silicon, silicon carbide, aluminium, boron, beryllium, molybdenum, niobium, tantalum, titanium, vanadium or zirconium. The PCD material can be attached to a carbide, nitride, carbonitride or cermet substrate and can be used to make cutting inserts and shear cutters in subterranean drill bits.

公开(公告)号：GB2403967B

公开(公告)日：2005-03-16

申请号：GB0415203

申请日：2001-11-21

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART ,  EYRE RONALD K

IPC: E21B10/56 ,  E21B10/567 ,  E21B10/573 ,  E21B10/46

公开(公告)号：GB2403967A

公开(公告)日：2005-01-19

申请号：GB0415203

申请日：2001-11-21

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART ,  EYRE RONALD K

IPC: E21B10/56 ,  E21B10/567 ,  E21B10/573 ,  E21B10/46

Abstract: A cutting element comprises a substrate 2 having an interface surface 3, and an ultra hard material layer 4 coupled to the interface surface 3 and having an exposed surface 5. A main depression 12 is formed on the exposed surface 5 of the ultra hard material 4, and is extending radially outward to the periphery of the ultra hard material layer 4. A plurality of secondary depressions 38 are formed on the ultra hard material layer 4 and are abutting and surrounding the main depression 12, and each secondary depression 38 is abutting another. The main depression 12 has a maximum depth, and each secondary depression 38 has a maximum depth shallower than the maximum depth of the main depression 12.

公开(公告)号：ZA200301565B

公开(公告)日：2003-09-16

申请号：ZA200301565

申请日：2003-02-26

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART

IPC: B23B51/00 ,  B22F3/10 ,  B22F7/06 ,  B23B27/14 ,  B23B27/20 ,  B23P15/28 ,  C04B35/52 ,  C23C24/08 ,  C23C30/00 ,  E21B

Abstract: An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

公开(公告)号：CA2357476A1

公开(公告)日：2002-06-07

申请号：CA2357476

申请日：2001-09-19

Applicant: SMITH INTERNATIONAL

Inventor： MIDDLEMISS STEWART ,  EYRE RONALD K

IPC: B23C5/20 ,  C04B37/02 ,  E21B10/56 ,  E21B10/567 ,  E21B10/573 ,  E21B10/46

Abstract: A cutting layer is provided having a radially extending depression formed on the exposed surface of the cutting element's cutting layer. A corresponding depression m ay be formed on the substrate end surface below the depression formed on the cutting layer. Furthermore, secondary shallower depressions may be formed on the cutting layer. The cutting elemen t is typically mounted in a drag bit such that the cutting layer radially extending depression makes contact with the earth formations.

公开(公告)号：CA2340382A1

公开(公告)日：2001-09-09

申请号：CA2340382

申请日：2001-03-09

Applicant: SMITH INTERNATIONAL

Inventor： EYRE RONALD K ,  MIDDLEMISS STEWART ,  WHITE BRIAN A ,  FANG ZHIGANG ,  GRIFFO ANTHONY

IPC: C09K3/14 ,  C22C26/00 ,  E21B10/52 ,  E21B10/56 ,  E21B10/567 ,  B24D3/10 ,  E21B10/46

Abstract: Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystalline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material. In an example embodiment, the granules are polycrystalline diamond and the cermet material is cemented tungsten carbide. PCD carbide composites of this invention display improved properties of fracture toughness and chipping resistance, without substantially compromising wear resistance, when compared to conventional pure PCD materials.