中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

176 records (took 0.033 seconds)

    32.
    发明专利
    未知

    公开(公告)号：DE69029255D1

    公开(公告)日：1997-01-09

    申请号：DE69029255

    申请日：1990-12-20

    Applicant: SONY CORP

    Inventor： ATA MASAFUMI ,  KAWASUMI KOICHI ,  YAKURA YUJI ,  WATANABE HARUO

    IPC: C08F220/28 ,  G03G9/087

    Abstract: A developer for electrostatic electrophotography which comprises a composition of colorant particles, an electric charge supplying agent and a resin binder dispersed in a dispersion medium. The resin binder is a copolymer which has a polyoxyethylene units at side chains thereof, so that the interaction with the electric charge supplying agent is improved. The resultant developer ensures good resolution, gradation and fixing property and is suitable for wet development to give high-quality images. When the copolymer used as the resin binder has styrene units therein, its solubility in the dispersion medium is improved. The developer is either liquid or solid depending on the type of dispersion medium.

    Electronic element and method for manufacturing same
    33.
    发明专利
    Electronic element and method for manufacturing same 审中-公开
    电子元件及其制造方法

    公开(公告)号：JP2005268724A

    公开(公告)日：2005-09-29

    申请号：JP2004083094

    申请日：2004-03-22

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MARUYAMA RYUICHIRO ,  GOSAIN DURHAM PAL ,  ATA MASAFUMI

    IPC: H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic element in which a junction between a semiconductor region and a conductor region can be manufactured within a same transparent oxide layer in a simple process.
    SOLUTION: A transparent conductive oxide layer 19 is set as an anode, and a probe 21 of an atomic force microscope is placed with a predetermined interval from a surface of the transparent conductive oxide layer 19, which is set as a cathode. The transparent conductive oxide layer 19 is scanned with the probe 21 to excite an electric field with being applied with negative bias in the air. Thus, oxygen is implanted into a portion where the electric field is excited, and thus electric conductivity of a partial region of the transparent conductive oxide layer 19 is decreased to make the region into semiconductor, and consequently a semiconductor region is formed adjacent to a conductor region. According to the method, a transparent transistor having a semiconductor channel region, and source and drain electrodes comprising the conductor region in one transparent oxide layer is realized.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题：提供一种电子元件的制造方法，其中可以在简单的工艺中在相同的透明氧化物层内制造半导体区域和导体区域之间的结。 解决方案：将透明导电氧化物层19设置为阳极，并将原子力显微镜的探针21从设置为阴极的透明导电氧化物层19的表面以预定间隔放置。 透明导电氧化物层19用探针21扫描，以在空气中施加负偏压来激发电场。 因此，将氧注入到电场被激发的部分，因此透明导电氧化物层19的部分区域的导电性降低，使得该区域成为半导体，因此形成与导体相邻的半导体区域 地区。 根据该方法，实现了具有半导体沟道区域的透明晶体管，并且实现了在一个透明氧化物层中包括导体区域的源极和漏极。 版权所有（C）2005，JPO＆NCIPI

    Method for producing cylindrical molecule, cylindrical molecular structure, display apparatus and electronic device
    34.
    发明专利
    Method for producing cylindrical molecule, cylindrical molecular structure, display apparatus and electronic device 有权
    生产环状分子，环状分子结构，显示装置和电子装置的方法

    公开(公告)号：JP2005162571A

    公开(公告)日：2005-06-23

    申请号：JP2003406759

    申请日：2003-12-05

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： GOSAIN DURHAM PAL ,  FUJINO TOSHIO ,  ATA MASAFUMI

    IPC: B82B3/00 ,  C01B31/02 ,  C30B29/66 ,  H01J1/304 ,  H01J31/12 ,  H01L29/06

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing cylindrical molecules to control directivity of cylindrical molecules comprising carbon or the like without applying an electric field. SOLUTION: A plurality of protruded ribs 13 are formed on a substrate 11 having an oxide film 12 formed on the surface. Then, for example, a master plate having projections on its surface is used to transfer a catalytic substance 30 from the master plate onto the protruded ribs 13 to dispose the catalytic substance 30 near the peaks of the protruded ribs 13. By heating the substrate as well as supplying a growth gas, the catalytic substance 30 develops directivity and as a result, carbon nanotubes 41 are grown in the direction shown as an arrow (A) perpendicular to the ridge lines 13A of the protruded ribs 13. Thereby, the growing direction of carbon nanotubes 41 can be controlled without applying an electric field and a carbon nanotube structure 40 having favorable orientation can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种制造圆柱形分子以控制包含碳等的圆柱形分子的方向性而不施加电场的方法。 解决方案：在具有形成在表面上的氧化膜12的基板11上形成多个突出的肋13。 然后，例如，在其表面上具有突起的母板用于将催化物质30从母板转移到突出的肋13上，以将催化物质30设置在突出肋13的峰附近。通过将基板加热 为了提供生长气体，催化物质30产生指向性，结果，碳纳米管41沿与突出肋13的脊线13A垂直的箭头（A）所示的方向生长。因此，生长方向 可以在不施加电场的情况下控制碳纳米管41，并且可以获得具有良好取向的碳纳米管结构40。 版权所有（C）2005，JPO＆NCIPI

    Substrate manufacturing method, and substrate
    36.
    发明专利
    Substrate manufacturing method, and substrate 审中-公开

    公开(公告)号：JP2004261876A

    公开(公告)日：2004-09-24

    申请号：JP2003003779

    申请日：2003-01-09

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： GOSAIN DURHAM PAL ,  KAJIURA HISASHI ,  MARUYAMA RYUICHIRO ,  SHIRAISHI SEIJI ,  KO KOKIN ,  SUMINO KOJI ,  WACHI SHIGEAKI ,  ATA MASAFUMI

    IPC: B82B3/00 ,  B82B1/00 ,  C01B31/02

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern-arranged substrate manufacturing method capable of forming a more fine pattern of the catalyst metal in comparison with the photo-lithographic technology.
    SOLUTION: Thermal distribution 11 corresponding to a desirable pattern is given to a raw material substrate 10, which is formed by adding a second material composed of a catalyst metal such as iron (Fe) in a first material formed of a semiconductor of silicon (Si) with radiation of the energy beam 12 using a diffraction grating 13 to melt a surface of the raw material substrate. Thereafter, radiation of the energy beam 12 is stopped, and the heat is radiated from the surface of the raw material substrate 10 to deposit iron at a position corresponding to the thermal pattern 11 to form a pattern of deposition range. The iron deposed in the deposition range is used to form a carbon nanotube or the like.
    COPYRIGHT: (C)2004,JPO&NCIPI

    Nonvolatile random access memory
    37.
    发明专利
    Nonvolatile random access memory 审中-公开

    公开(公告)号：JP2004146820A

    公开(公告)日：2004-05-20

    申请号：JP2003343947

    申请日：2003-10-02

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： SUMINO KOJI ,  ATA MASAFUMI

    IPC: G11C11/15 ,  H01F10/12 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

    CPC classification number: B82Y10/00

    Abstract: PROBLEM TO BE SOLVED: To provide a nonvolatile random access memory that can be put to practical use by obtaining a paramagnetic layer having a sufficient spin coherence length and a uniform spin field.
    SOLUTION: The paramagnetic layer 24 is, for example, an included thin fullerene film having a thickness of ≥0.5 nm and ≤5 μm. The fullerene of the thin film has a hollow section of 0.1-50 nm in size, and a paramagnetic material is included in the hollow section. In the thin fullerence film, a Fermi vector well overlaps the small-number spin bands or large-number spin bands of a ferromagnetic fixed layer 23 and a ferromagnetic free layer 25, and the spin orientation of the included paramagnetic material is made to become random. In addition, the electron spin in the fullerene is quantized in a pseudo zero-dimensional space. Consequently, the spin coherence length of the included thin fullerene film becomes longer and the scattering of spin-polarized conductive electrons disappears.
    COPYRIGHT: (C)2004,JPO

    Electrochemical hydrogen-flow control device
    38.
    发明专利
    Electrochemical hydrogen-flow control device 有权
    电化学氢流控制装置

    公开(公告)号：JP2003313691A

    公开(公告)日：2003-11-06

    申请号：JP2002118745

    申请日：2002-04-22

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MARUYAMA RYUICHIRO ,  ATA MASAFUMI ,  OKANE MAKOTO

    IPC: C01B31/02 ,  C25B1/02 ,  C25B13/04 ,  H01M4/88 ,  H01M4/92 ,  H01M8/04 ,  H01M8/06 ,  H01M8/10

    CPC classification number: B82Y15/00 ,  H01M4/8807 ,  H01M4/92 ,  H01M4/923 ,  H01M8/04089 ,  H01M8/0656 ,  H01M8/1007 ,  H01M8/1023 ,  H01M8/1039 ,  H01M8/1048

    Abstract: PROBLEM TO BE SOLVED: To provide an electrochemical hydrogen-flow control device which can be operated in a non-humidified atmosphere at room temperature, and reduces the weight and the size. SOLUTION: The electrochemical hydrogen-flow control device has an electrochemical cell consisting of a first pole for generating proton (H + ), and a second pole for converting the above proton generated in the above first pole to a hydrogen gas, and a proton-conducting solid electrolyte membrane which is sandwiched between these poles; and a hydrogen-flow control section for making a predetermined amount of the hydrogen gas evolve in the second pole side; wherein the above proton-conducting solid electrolyte membrane is made of a derivative of fullerene formed by means of introducing a proton-dissociative group into carbon atoms composing a fullerene molecule. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：提供可在室温下在非加湿气氛中操作并且减轻重量和尺寸的电化学氢流控制装置。 解决方案：电化学氢流控制装置具有由用于产生质子的第一极（H + ）组成的电化学电池，以及用于转换上述第一个中产生的上述质子的第二极 氢和氢夹持的质子传导固体电解质膜; 以及用于使预定量的氢气在第二极侧放出的氢流控制部; 其中上述质子传导固体电解质膜由通过将质子解离基引入构成富勒烯分子的碳原子形成的富勒烯的衍生物制成。 版权所有（C）2004，JPO

    PRODUCTION OF CARBON NANOTUBE
    40.
    发明专利
    PRODUCTION OF CARBON NANOTUBE 失效

    公开(公告)号：JP2001058805A

    公开(公告)日：2001-03-06

    申请号：JP23112099

    申请日：1999-08-18

    Applicant: SONY CORP

    Inventor： SHIRAISHI SEIJI ,  ATA MASAFUMI

    IPC: C01B31/02 ,  B82B1/00

    Abstract: PROBLEM TO BE SOLVED: To easily produce a large amount of carbon nanotube in high yield by mixing a transition metal element or its alloy to the same kind of fullerene molecules or a mixture of different kinds of fullerene molecules and heating the obtained mixture. SOLUTION: The carbon number of the fullerene molecule is preferably >=60 and a higher-order fullerene molecule is more preferable. The transition metal element is preferably rare earth elements, iron-group elements, Pd, Rh, Pt, Co or Ni. The heating is carried out preferably in an inert gas atmosphere or an atmosphere containing an inert gas. He, Ar or nitrogen can be used as the inert gas. As an alternative, the heating may be carried out in an atmosphere having reduced pressure or an atmosphere containing hydrogen, carbon or oxygen in addition to the inert gas. The heating temperature is preferably higher than the temperature to form an alloy of the transition metal element or its alloy with carbon, usually >=500 deg.C.

Patent Agency Ranking