DRIVE METHOD FOR OPTICAL DEVICE
    31.
    发明专利

    公开(公告)号:JPH077704A

    公开(公告)日:1995-01-10

    申请号:JP17231593

    申请日:1993-06-18

    Applicant: SONY CORP

    Abstract: PURPOSE:To attain low voltage drive and to improve the stability by repeating application of two positive pulses and two negative pulses succeeding to the positive pulses when an optical device having a liquid crystal cell is driven and selecting an absolute value of the 1st pulse larger than an absolute value of the 2nd pulse in the pulses of same polarity. CONSTITUTION:A display device 1 is composed of combination of a liquid crystal display element LCD 2, a ferroelectric liquid crystal display element LC 3 as a phase modulation optical element and a double refraction medium 4 comprising a crystal plate or the like. An output light 6 from the LCD 2 has a linearly polarized light and a wobbling element 7 comprising the FLC 3 and the medium 4 deviates picture elements. When the display device is driven, positive and negative pulses being the combination of a head pulse P of a high voltage and a low DC voltage are applied to the device repetitively. Thus, the pulse P contributes to high speed processing and the pulse DC is used for the adjustment of a cone angle, the device is driven at a low voltage and the electrochemical stability and the wobbling effect are improved.

    FERROELECTRIC LIQUID CRYSTAL DISPLAY ELEMENT

    公开(公告)号:JPH05181152A

    公开(公告)日:1993-07-23

    申请号:JP35978791

    申请日:1991-12-27

    Applicant: SONY CORP

    Abstract: PURPOSE:To reduce contact resistance and to attain good high-speed responsiveness by forming a metallic film at the part where a transparent electrode is joined with the external wiring board. CONSTITUTION:A transparent electrode layer 2 of ITO, etc., on the glass substrate 1 of a ferroelectric liq. crystal display element and the wiring layer 4 of a flexible wiring board 5 obtained by forming the wiring layer 4 of copper foil, etc., on a flexible resin sheet 3 are electrically joined through an anisotropic conductive adhesive 6. In this case, a metallic thin film 8 of aluminum, gold, etc., is laminated on the part 7 of the electrode layer 2 to be joined with the wiring board 4, and hence the contact resistance between the electrode layer 2 and metallic thin film 8 at the part 7 is reduced. Besides, since the adhesive layer 6 is kept out of contact with the electrode layer 2 and in contact with the metallic thin film 8 having higher conductivity than ITO, and the contact resistance between the adhesive layer 6 and the thin film 8 is also reduced.

    LIQUID CRYSTAL DISPLAY ELEMENT
    33.
    发明专利

    公开(公告)号:JPH0580339A

    公开(公告)日:1993-04-02

    申请号:JP27025091

    申请日:1991-09-21

    Applicant: SONY CORP

    Abstract: PURPOSE:To improve the memory characteristic of the liquid crystal display element for which a ferroelectric liquid crystal is used and to improve the uniformity of the orientation thereof without incorporating bubbles into a liquid crystal cell by approximating the apparent cone angle of the liquid crystal sufficiently to 45 deg. so that the max. contrast or the high contrast approximate thereto is obtainable when the liquid crystal display element is used by inserting the element between orthogonal polarizing plates. CONSTITUTION:A diagonally vapor deposited SiO film which is subjected to an annealing treatment to have

    PRODUCTION OF LIQUID CRYSTAL DISPLAY ELEMENT

    公开(公告)号:JPH0580336A

    公开(公告)日:1993-04-02

    申请号:JP27024991

    申请日:1991-09-21

    Applicant: SONY CORP

    Abstract: PURPOSE:To provide the process for production of the liquid crystal display element having a diagonally vapor deposited SiO film which allows liquid crystal orientation of excellent electrooptical characteristics, such as contrast ratio, memory characteristic and stability to impressed biases and more particularly the ferroelectric liquid crystal display element. CONSTITUTION:This process for production of liquid crystal display element consists in including a stage for depositing SiO by diagonal vapor deposition on a substrate, thereby forming the diagonally vapor deposited SiO film as a liquid crystal oriented film and more particularly a ferroelectric liquid crystal oriented film on the substrate. The temp. of the substrate is kept at 100 to 400 deg.C or the vapor deposition rate of the SiO is kept at 0.5 to 10 angstrom at the time of depositing the SiO by diagonal vapor deposition on the substrate. Particularly the control of these values to the specified value within the ranges of these numerical value is more preferable.

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