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公开(公告)号：JPH0730003A
公开(公告)日：1995-01-31
申请号：JP19785193
申请日：1993-07-14
Applicant: SONY CORP
Inventor： MAARI KOUICHI
IPC: G11C11/401 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PURPOSE:To provide the driving method for a semiconductor memory with which a bit-unit movement can be performed, to improve the integration of the semiconductor memory storage, and to obtain high functional efficiency. CONSTITUTION:A plurality of gate wires 101,... on which a plurality of cells 11, 12,... consisting of a non-volatile memory element 1 with a floating gate 20 are connected, are arranged on a substrate, a pair of source wires 201... and drain wires 301... are provided in such a manner that they are orthogonally intersecting with the gate wires 101.... Besides, a circuit is constituted by arranging a cell 11 between the paired source wires 201... and the drain wires 301... in the title driving method for a semiconductor device. When electrons are implanted into a selective cell 22, plus voltage is applied to a gate wire 102, minus voltage is applied to a drain wire 302, the voltage of same potential as the drain wire 302 is applied to the substrate, and the other wires are earthed. As a result, electrons are selectively implanted to the selective cell 22 only.
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公开(公告)号：JPH06151350A
公开(公告)日：1994-05-31
申请号：JP32888792
申请日：1992-11-13
Applicant: SONY CORP
Inventor： MAARI KOUICHI
IPC: H01L21/265 , H01L21/266 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/78 , H01L29/784
Abstract: PURPOSE:To accurately perform an ion implantation operation without influencing other regions by a method wherein, when ions are implanted especially into an extremely fine region, a special process is not added, a special resist is not used and the patterning of a resist is devised. CONSTITUTION:A manufacturing method of a semiconductor device is provided at least with a process wherein a LOCOS film 22 is formed on the surface of a semiconductor substrate 20 and with a process wherein a resist film 28 is formed on the surface of the semiconductor substrate 20 and an opening part 30 for ion implantation use is formed in the resist film 28. When the opening part 30 for ion implantation use is formed in the resist film 28, a dummy opening region 32 used to isolate the resist film 28, in which the opening part 30 for ion implantation use has been formed, from other resist film 28 is formed on the LOCOS film 22 around the opening part 30 for ion implantation use.
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公开(公告)号：JPH0621472A
公开(公告)日：1994-01-28
申请号：JP17814592
申请日：1992-07-06
Applicant: SONY CORP
Inventor： MAARI KOUICHI
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PURPOSE:To provide a semiconductor memory and a method of fabrication thereof wherein a channel length is unchanged, and a cell size is not larger than a stacked gate, and further there is ensured an excess erasing measure with respect to a structure. CONSTITUTION:In a stacked semiconductor memory which is yielded by laminating a floating gate and a control gate putting an insulating layer therebetween, control gates 3 are disposed up and down mediating a connection portion and putting an insulating layer 4 therebetween, and a lower portion of a control gate 5 is disposed adjoining to the floating gate 3 putting a second insulating layer.
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公开(公告)号：JP2006216025A
公开(公告)日：2006-08-17
申请号：JP2006006537
申请日：2006-01-13
Inventor： MAARI KOUICHI
Abstract: PROBLEM TO BE SOLVED: To simply constitute a home network while reducing costs. SOLUTION: A short-distance radio communications interface 23 performs short-distance radio communications with other electronic apparatuses which compose radio network. A non-contact IC device 21 performs mutual certification processing between other electronic apparatus having a similar non-contact IC device when a non-contact IC device is brought close. Profile information such as proper ID and URL to access are recorded in each electronic apparatus. The mutual certification processing is performed through the non-contact IC devices by exchanging and recording peaces of unique profile information on both the electronic apparatuses. Communication becomes possible through the short-distance radio communications interface 23 by performing mutual certification processing. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：简单地构成家庭网络，同时降低成本。 解决方案：短距离无线电通信接口23与构成无线电网络的其他电子设备进行短距离无线电通信。 非接触IC器件21在非接触式IC器件接近的情况下，在具有类似的非接触式IC器件的其他电子设备之间进行相互认证处理。 诸如适当的ID和要访问的URL的简档信息被记录在每个电子设备中。 通过在两个电子设备上交换和记录独特的简档信息的同时，通过非接触式IC器件执行相互认证处理。 通过进行相互认证处理，可以通过短距离无线通信接口23进行通信。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2003178272A
公开(公告)日：2003-06-27
申请号：JP2001377668
申请日：2001-12-11
Applicant: SONY CORP
Inventor： MAARI KOUICHI
Abstract: PROBLEM TO BE SOLVED: To easily and surely execute authentication processing by a network in a home. SOLUTION: A short distance radiocommunication interface 68 executes short distance radiocommunication with the other electronic equipment for constituting a radio network. A noncontact IC device 14 executes mutual authentication processing when mutual noncontact IC devices are approached between the other electronic equipment provided in a similar noncontact IC device. The respective electronic equipment is record with profile information such as proper ID and accessing URL. The mutual authentication processing is executed by replacing and recording the profile information inherent in the mutual electronic equipment via the noncontact IC device. Communication can be executed via the short distance radiocommunication interface 68 by executing the mutual authentication processing. COPYRIGHT: (C)2003,JPO
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Patent Agency Ranking36.发明专利
公开(公告)号：JP2002279284A
公开(公告)日：2002-09-27
申请号：JP2001074905
申请日：2001-03-15
Applicant: SONY CORP
Inventor： OWA TAKAYUKI , MAARI KOUICHI
Abstract: PROBLEM TO BE SOLVED: To charge a value, corresponding to the use situation, to a charged user while absorbing many users regardless of free of charge and with charge to maintain activity a community. SOLUTION: A charging server 27 is provided for automatically carrying out charging processing to the printing of contents information of a static image, a dynamic image, a document image, music, or the like in a virtual space which gives a privilege to a user in community service without charging log-in itself to a community system.
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37.发明专利
公开(公告)号：JP2002109301A
公开(公告)日：2002-04-12
申请号：JP2000294863
申请日：2000-09-27
Applicant: SONY CORP
Inventor： MAARI KOUICHI , KAGAWA TAKAAKI
Abstract: PROBLEM TO BE SOLVED: To facilitate ordering of a customized article, to allow an orderer to more accurately grasp the image of the customized article and also to simplify work, in the case a plurality of users customizing an article in cooperation. SOLUTION: A user who orders the customized merchandise uses a user PC 101a and accesses a merchandise order receipt management center 102 via the Internet 100. The user designates merchandise and also transmits image information, such as a photograph to be transferred to the merchandise to the center 102. The center 102 constructs a virtual reality space, where the image picture of the customized merchandise obtained by transferring the photograph, etc., corresponding to the image information into the designated merchandise is displayed with three-dimensional graphics and provides the user PC 101a with the image picture via the Internet 100.
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公开(公告)号：JPH0935488A
公开(公告)日：1997-02-07
申请号：JP18307595
申请日：1995-07-19
Applicant: SONY CORP
Inventor： MAARI KOUICHI , TANAKA AKIRA
Abstract: PROBLEM TO BE SOLVED: To realize a highly reliable high capacity nonvolastile memory in which corruption of data due to transition with time of threshold voltage of a memory cell can be avoided. SOLUTION: The memory 10 comprises more than one, e.g. six, memory chips 11-16, a refresh function block 17, a clock function block 18, and a battery 19 wherein the refresh function block measures the time elapsed after final writing for each memory chip or memory sector. The elapsed time thus measured is compared with a preset limit charge holding time and when the limit charge holding time is reached, each memory chip or memory sector is rewritten. Consequently, corruption of stored data incident to elapse of time can be avoided resulting in a highly reliable nonvolatile memory having significantly enhanced capacity.
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公开(公告)号：JPH08330453A
公开(公告)日：1996-12-13
申请号：JP13799495
申请日：1995-06-05
Applicant: SONY CORP
Inventor： MAARI KOUICHI
IPC: G11C17/00 , G11C16/02 , G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PURPOSE: To provide a semiconductor device which provides a stable nonvolatile memory transistor characteristic without increasing the cell area. CONSTITUTION: The source interconnection layer SD of a memory transistor MT is connected to a first diffusion layer Pw whereupon a channel of the memory transistor MT is to be formed. For example, when the memory transistor MT is formed in a P-type well Pw formed in an N-well Nw formed on a P-type substrate Pw, the potential of the substrate Pw can be stabilized. The source diffusion layer SD and a substrate Psb are permitted to have the same potential by connecting the source diffusion layer SD of the memory transistor MT with substrate Psb by a silicide layer SID.
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公开(公告)号：JPH07130840A
公开(公告)日：1995-05-19
申请号：JP29406593
申请日：1993-10-28
Applicant: SONY CORP
Inventor： MAARI KOUICHI
IPC: H01L21/76 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PURPOSE:To separate each element sufficiently with an element separating film having the thin film thickness by separating the element having the floating gate with the specified element separating film. CONSTITUTION:This device comprises a semiconductor substrate 10, an element separating film 11, a channel-stopping diffused layer 12 and an element 13. In this semiconductor device 1, the element 13 is the element having a floating gate 133. At the element separating film 11, where a control gate 135 is formed on the upper surface of the element separating film 11 through the floating gate 133, the conductivity type of the semiconductor substrate 10 beneath the element separating film 11 is not inverted. At the part where the control gate 135 is directly formed on the upper surface of the element separating film 11, a film thickness (t), wherein the conductivity type of the semiconductor substrate 10 beneath the element separating film 11 is inverted, is provided. Thus, the element 13 is separated with the element separating film 11 having the more thinner film thickness (t).
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