公开(公告)号：JP2006005758A

公开(公告)日：2006-01-05

申请号：JP2004181459

申请日：2004-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANAKA NAOHIRO ,  MITARAI TAKASHI ,  TADA MASAHIRO ,  NANBADA KOJI

IPC: H03H9/24 ,  B81B3/00 ,  H01H59/00 ,  H01L21/822 ,  H01L27/04 ,  H03H3/007 ,  H03H9/46 ,  H03H9/50 ,  H03H9/52

CPC classification number: H03H9/2463 ,  H03H3/0073 ,  H03H3/0075 ,  H03H9/2426 ,  H03H9/505 ,  H03H9/525

Abstract: PROBLEM TO BE SOLVED: To stabilize a direct current bias voltage to be applied to an electrostatically driven vibrator constituting a high frequency element.
SOLUTION: Communication equipment has a high frequency signal element including the electrostatically driven vibrator to which a direct current bias voltage is applied to operate and is configured by adding a circuit 10 having a function for stabilizing the direct current bias voltage between a pad 22 for feeding the direct current bias voltage and the vibrator 21.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：稳定施加到构成高频元件的静电驱动振动器的直流偏置电压。 解决方案：通信设备具有高频信号元件，包括施加有直流偏置电压的静电驱动振动器进行操作，并且通过添加具有用于稳定焊盘之间的直流偏置电压的功能的电路10 22，用于馈送直流偏置电压和振动器21.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004314289A

公开(公告)日：2004-11-11

申请号：JP2004068325

申请日：2004-03-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TADA MASAHIRO ,  KINOSHITA TAKASHI ,  TANAKA NAOHIRO ,  YAMAGUCHI SEIYA ,  MITARAI TAKASHI ,  NANBADA KOJI

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H3/0072 ,  B81B7/0012

Abstract: PROBLEM TO BE SOLVED: To seal a part of an oscillator of a micro machine by carrying out sacrifice layer etching, and to remove and seal a sacrifice layer without requiring a special packaging technology even in that case.
SOLUTION: In the manufacturing method of the micro machine 1 equipped with the oscillator 4 comprises steps of: forming the sacrifice layer around a moving portion of the oscillator 4; covering the sacrifice layer with an over coat film 8 and forming a penetrating port 10 leading to the sacrifice layer on the over coat film 8; carrying out the sacrifice layer etching for removing the sacrifice layer by using the penetrating port 10 so as to form a space around the moving portion; and sealing the penetrating port 1 by conducting deposition processing under a reduced pressure after sacrifice layer etching.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004181567A

公开(公告)日：2004-07-02

申请号：JP2002350639

申请日：2002-12-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TADA MASAHIRO ,  KINOSHITA TAKASHI ,  MITARAI TAKASHI ,  ITO YASUYUKI

IPC: B81B3/00 ,  B81C1/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H3/0072 ,  H03H9/2405 ,  H03H2009/02511

Abstract: PROBLEM TO BE SOLVED: To provide a micromachine for a high frequency filter having a high Q value, and a higher frequency band.
SOLUTION: This micromachine 1 has an output electrode 7 arranged on a base board 5, an interlayer insulating film 9 arranged in a state of covering the base board 5 and having a hole pattern 9a with the output electrode 7 as a bottom part and a belt-like vibrator electrode 11 arranged on the interlayer insulating film 9 so as to cross an upper part with the inside of the hole pattern 9a as a space part A. The vibrator electrode 11 is characterized by being arranged in a recessed shape on the hole pattern 9a side along a side wall of the hole pattern 9a.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003243628A

公开(公告)日：2003-08-29

申请号：JP2002038194

申请日：2002-02-15

Applicant: SONY CORP

Inventor： MITARAI TAKASHI ,  HIRONAKA KATSUYUKI

IPC: H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a ferroelectric film which can be crystallized without losing the flatness before forming upper electrodes, a ferroelectric capacitor using the ferroelectric film, and a method of manufacturing a ferroelectric memory device. SOLUTION: The ferroelectric thin film 14 is formed, with the surface flatness retained, at a film formation temperature lower than a crystallization temperature. Then, a flatness retention film 15 is formed over the surface of the ferroelectric thin film, and crystallization and heat-treatment are conducted. The flatness retention film is an insulator and has an oxygen permeability, a property as a barrier against hydrogen, or a property as a barrier against diffusion of constituent elements of a ferroelectric material. COPYRIGHT: (C)2003,JPO