Abstract:
PURPOSE:To suppress an aggregating phenomenon during recrystallization through good wettability between SiO2 film and a semiconductor thin film by forming an SiO2 film on the surface of the semiconductor thin film and conducting heat treatment in an oxygen atmosphere or a nitrogen atmosphere prior to recrystallization by energy irradiation. CONSTITUTION:A polycrystaline silicon thin film 22 is formed by the CVD method on a quartz substrate 21 and an SiO2 film 25 is then formed by the CVD method thereon. Next, an SiO2 film 26 is formed by the plasma CVD method on the CVD SiO2 film 25 to prepare a sample 27. This sample 7 is then annealed at 1000 deg.C for 200 minutes in an oxygen atmosphere and the polycrystal silicon thin film 22 is melted for recrystallization by the zone melting method using a graphite strip heater. According to this method, in the zone melt recrystallization in an SiO2 film/Si thin film/SiO2 film (thermal oxidation) or a quartz substrate structure, the aggregation phenomenon of silicon film can be suppressed, and as a result a so-called SOI substrate of high quality can be prepared.
Abstract:
PURPOSE: To produce the titled thin film having high quality, by melting a semiconductor layer with a heating means, and quenching the molten layer with the following cooling means, thereby remarkably decreasing the formation of crystal boundary having small inclination angle, such as subgrain boundary. CONSTITUTION: A semiconductor wafer 1 composed of an insulation substrate 4 made of quartz, a polycrystalline semiconductor layer 5 made of silicon, etc., and a cap layer 6 made of SiO 2 layer, etc. is placed on a plate carbon heater 2 for preheating. A heating means 3 composed of a linear carbon heater is scanned on the semiconductor wafer 1 along the direction of the arrow 3a at a scanning rate of 2mm/sec to effect the heating and melting of the polycrystalline semiconductor layer 5. Thereafter, cooling gas such as He, Ar, etc. is blasted to the molten semiconductor layer from the nozzle of the cooling means consisting of a metallic or plastic pipe 8a having a number of nozzles bored at the lower side of the pipe. The molten semiconductor layer is quenched and solidified by this process to obtain the titled thin film. COPYRIGHT: (C)1986,JPO&Japio
Abstract:
PURPOSE:To prevent the generation of sub-boundary and to obtain a recrystallized thin film of high crystallization by a method wherein recrystallization is performed in such a manner that the molten semiconductor thin film will be cooled slowly. CONSTITUTION:A semiconductor thin film heating device, which is constituted by arranging a plane-surfaced strip heater 7 in such a manner that is has the angle theta, is used for the substrate 1 which is placed on a fixed heater 2, and the strip heater 7 is moved in parallel with the substrate 1 at the prescribed speed maintaining the prescribed interval with the substrate. The substrate 1 has a quartz plate 5 and a polycrystalline thin film 6, the temperature of silicon after fused goes down drawing a gentle curve 8, the density of generated surface of sub-boundary can by made smaller and a single crystal silicon region, which can be effectively utilized for the formation of elements, can also be made larger.
Abstract:
PROBLEM TO BE SOLVED: To provide a PSG test device appropriate for home monitoring.SOLUTION: The PSG-test headgear includes an electroencephalogram electrode and an electrooculogram electrode and an oxygen saturation sensor. The electroencephalogram electrode obtains the electroencephalogram of a user. The electrooculogram electrode obtains the electrooculogram of the user. The oxygen saturation sensor obtains the oxygen saturation level of the user. PSG test device further has a PSG test chest brace having a chin electromyogram electrode to obtain a chin electromyogram, an airflow sensor which obtains nasal and mouth breathing, an electrocardiogram sensor to obtain an electrocardiogram and a respiratory movement sensor which obtains respiratory movement.
Abstract:
PROBLEM TO BE SOLVED: To provide a variant protein having diaphorase activities and heat-resistant degree of diaphorase at a prescribed level or more. SOLUTION: The variant protein comprises a specific natural amino acid sequence having an amino acid sequence wherein at least one or more acid residues are deleted, substituted, added or inserted residues from, with or to, and has the diaphorase activities having an enzyme activity of ≥245. Preferably, the thermostable variant protein has an enzyme activity of ≥245 and residual ratio of the enzyme activity after heat treatment of ≥41%. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a low-cost and high-performance fuel cell by improving permeation and diffusion of a fuel in an electrode to allow generated protons and electrons to smoothly move in the electrode. SOLUTION: This fuel cell 10 is so structured that an electrolyte membrane 11 having ion conductivity is sandwiched between a pair of electrodes. At least either of the pair of electrodes has a structure where a small void having a diameter of 0.001-0.1 μm and a large void having a diameter of 0.1-100 μm are present. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a dye sensitizing solar cell that is superior in conversion efficiency. SOLUTION: This is a dye sensitizing solar cell that comprises a light absorption layer 3 made of a light absorbing particle carrying a dye and an electrolyte layer 5 between an electrode 2 and an opposite electrode 6 formed on the surface of a transparent substrate 1. A light scattering particle 4 having a different particle size from the above light absorbing particle is contained in the above light absorption layer 3. The dye sensitizing solar cell constructed in this manner can absorb much of the energy of light, which was transmitting through the light absorption layer in the conventional structure, in the dyes in the light absorption layer, thereby, conversion efficiency can be improved and the output current of the dye sensitizing solar cell can be improved. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To improve a battery characteristic such as a discharging load characteristic and a cycle characteristic. SOLUTION: This non-aqueous electrolyte secondary battery is provided with a positive electrode 4 formed by laminating a first positive electrode mix layer 10a containing the first positive electrode active material and a second positive electrode mix layer 10b containing the second positive electrode active material having a granular diameter larger than that of the first positive electrode active material in order on the main surface of a positive electrode collector 9, a negative electrode 5 formed of a negative electrode mix layer 12 containing the negative electrode active material, and the non-aqueous electrolyte 6 interposed between the positive electrode 4 and the negative electrode 5. With this structure, electrical resistance in the positive electrode 4 and the dope/de-dope efficiency of the lithium ion are improved, and the internal resistance of the non-aqueous electrolyte secondary battery 1 is restricted to improve the battery characteristic such as a discharging load characteristic and a cycle characteristic. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To reliably insure a pleasant speed feeling desired by a user. SOLUTION: A user accessing a network via network communication equipment 100 preliminarily declares a data transfer time that brings a pleasant feeling to him/her. Access from the user reaches a data controlling means 120 via a group modem 110, and the frame of a data request is transmitted to the address of an information data file transmission source server desired by the user via a network transmitting and receiving means 140 and a router 150. In such a case, the router 150 is connected to the network, collects path information up to a target address on the network and calculates a prescribed optimum path. A response including information about the server from the transmission source server is sent to the means 120 via the router 150 and the means 140. A path optimizing means 130 calculates a band value at which an information data file obtained from the server can be transmitted with a data transfer time preliminarily set by the user, and each node insures the band. When the band cannot be insured, an insurable routing is retrieved and the path and the band are insured.
Abstract:
PROBLEM TO BE SOLVED: To reduce the load of a network and to easily acquire a desired information element by taking the information related to the information element that is decided by a user out of an information storage device via a terminal equipment based on the relative information. SOLUTION: A terminal equipment 21 transfers the information that is desired by a user from an information storage 22 via a communication circuit 10 and is provided with plural information elements 23-1 to 23-n, a storage means 40 which stores the mutually relative information 5 to 7 on the elements 23-1 and 23-n, and an information element decision means 2 which decides one of elements 23-1 to 23-n via the user based on the information 5 to 7. Then the equipment 21 is placed in a network 10 and takes the information related to the information element decided by the means 2 out of the storage 22 via the circuit 10. In such a constitution, the using frequency and the load of the network 10 can be reduced.