Abstract:
A method for reading a capacitive sensor ( Fig. 1 ), constituted by an array of capacitors (C PIX_JK ) ordered in rows and columns functionally connected through row lines (R J ), each one electrically constituting a first plate in common to all the capacitors of a row, and through column lines (C K ), each one electrically constituting a second plate in common to all the capacitors of a column, the two sets of plates being orthogonal or quasi-orthogonal to each other, is provided. The method may be implemented by a circuit for biasing and reading capacitances that includes circuits for selecting a column line and a row line, a charge amplifier producing an output voltage representing the capacitance of the selected capacitor intercepted by the selected column and row lines, and comprises the steps of preliminarily resetting the output voltage of the charge amplifier, connecting to a reference voltage all the deselected row and column plates of the array and connecting an auxiliary capacitor and the selected capacitor to an inverting input of the amplifier and as feedback capacitor of said amplifier, respectively, or viceversa, applying a step voltage on the capacitor that is connected to the inverting input of the amplifier and reading at steady-state, the output voltage. An integrated reading system ( Fig. 2 ) for a capacitive sensor is also provided.
Abstract:
For each cell (1) to be programmed, the present threshold value (V o ) of the cell is determined; the desired threshold value (V TAR ) is acquired; the analog distance between the present threshold value and the desired threshold value is calculated; and a programming pulse (S) is then generated, the duration of which is proportional to the analog distance calculated. The programming and reading cycle is repeated until the desired threshold is reached. By this means a time saving is obtained, owing to the reduction of the number of intermediate reading steps. The method permits programming in parallel and simultaneously of a plurality of cells (1) of a memory array (2) which is connected to a single word line (5 1 ) and to different bit lines (4 1 - 4 N ), each with a programming pulse (S 1 - S N ) the duration of which is proportional to the analog distance calculated for the same cell. The programming process is thus very fast, owing to parallel application of the programming and the saving in the intermediate reading cycles.
Abstract:
An analog reading circuit (10) comprising a current mirror circuit (19) forcing two identical currents into a cell (2) to be read and into a reference cell (27) and an operational amplifier (31) having an inverting input connected to the drain terminal (13) of the cell (2) to be read, a non-inverting input connected to the drain terminal (28) of the reference cell (27) and an output connected to the gate terminal (30) of the reference cell. The reference cell (27) therefore forms part of a negative feedback loop which maintains the overdrive voltages of the cell (2) to be read and the reference cell (27) constant, irrespective of temperature variations. The reading circuit (10) is also of high precision and has a high reading speed.