公开(公告)号：JPH10270400A

公开(公告)日：1998-10-09

申请号：JP7705897

申请日：1997-03-28

Applicant: SUMITOMO CHEMICAL CO

Inventor： SUKUMODA ATSUSHI ,  SARARA KENICHI ,  TAKASHIMA MASAYUKI

IPC: B24B37/00 ,  C09K3/14 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To improve dispersibility of abrasive particles in abrasive slurry for elimination of occurrence of flaws on a to-be-polished surface and to perfectly remove abrasive particles after polishing by using, as the abrasives for semiconductor manufacture, a water emulsion containing vinyl compound polymer resin particles obtained by emulsion polymerization. SOLUTION: As abrasive for manufacturing a semiconductor, a water emulsion containing vinyl compound polymer resin particles obtained by emulsion polymerization is used. In short, emulsifier, super pure water, and vinyl compound such as styrene and methyl methacrylate are agitated and mixed to prepare monomer emulsion liquid of vinyl compound. Then, the emulsifier and super pure water are put in a reaction vessel comprising temperature adjuster and agitator, and its temperature raised to a specified value, then the inside of reaction vessel is replaced with nitrogen gas. After that, polymerization triggering agent is supplied in the reaction vessel, and such monomer emulsion liquid as prepared before is supplied at a constant speed to obtain a resin emulsion wherein copolymer particles of styrene and methyl methacrylate is diffused.

公开(公告)号：JPH09298180A

公开(公告)日：1997-11-18

申请号：JP3749797

申请日：1997-02-21

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SARARA KENICHI

IPC: B08B3/08 ,  B08B3/12 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a silicon wafer washing method by which the contamination caused by the adsorption of metallic impurities from washing solution can be avoided and which shows the satisfactory particle removing effect while the vaporization and decomposition of agent are suppressed. SOLUTION: (1) A silicon wafer washing method includes a process in which the surface of a silicon wafer is washed with mixed solution mainly composed of inorganic or organic solution, hydrogen peroxide solution and water and a process in which the surface of the silicon wafer is rinsed with superpure water after the previous washing process. A complexing agent is added to the above mentioned mixed solution and, further, an ultrasonic wave is applied to the mixed solution at a temperature lower than 40 deg.C in the mixed solution washing process. And/or complexing agent is added to the superpure water and, further, an ultrasonic wave is applied to the superpure water at a temperature lower than 40 deg.C in the superpure water rinsing process. (2) A silicon wafer washing method which is described in par. (1) and in which ethylene diamine 4 acetic acide is used as the complexing agent. (3) A silicon wafer washing method which is described in par. (1) and in which an ultrasonic wave with a frequency higher than 800kHz is used.

公开(公告)号：JPH09266189A

公开(公告)日：1997-10-07

申请号：JP7274196

申请日：1996-03-27

Applicant: SUMITOMO CHEMICAL CO

Inventor： SARARA KENICHI ,  TAKASHIMA MASAYUKI

IPC: G01N1/00 ,  H01L21/304 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To produce a surface particle number-controlled semiconductor wafer by taking a specified amt. of particle dispersed liq. and dispensed on the surface of a semiconductor wafer, the wafer is heated to evaporate the solvent in this liq. SOLUTION: Particles of a weight obtained from a previously formed calibration curve are added to a specified vol. of solvent to prepare a particle-dispersed liq. of required particle concn. A specified amount is taken by a pipette 1 and divided and dispensed on the surface of a semiconductor wafer 4 uniformly without deviation over the entire surface, the wafer is heated to remove the solvent from the divided and dispensed particle liq. 3, thereby leaving the particles as residual particles 5 on the wafer 4. Thus it is possible to produce a particle-treated semiconductor wafer with controlled number of surface deposited particles by a convenient method.

公开(公告)号：JPH07193035A

公开(公告)日：1995-07-28

申请号：JP33024193

申请日：1993-12-27

Applicant: SUMITOMO CHEMICAL CO

Inventor： SARARA KENICHI ,  TAKASHIMA MASAYUKI

IPC: H01L21/304 ,  G01N1/28

Abstract: PURPOSE:To provide a method, which can safely recover elements in a short time without contaminating environment in order to analyze the impurity elements on the surface of a silicon wafer and can recover the impurity element such as Cu, whose ionization tendency is smaller than Si. CONSTITUTION:The droplet of solution 3 comprising fluoric acid, hydrogen peroxide and water or these materials and hydrochloric acid is moved on the analyzing region of a silicon wafer 2. Thus, impurity elements are dissolved and recovered.

公开(公告)号：JPH05179202A

公开(公告)日：1993-07-20

申请号：JP34497591

申请日：1991-12-26

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  NAKADA TAKASHI ,  TAGUCHI SATOSHI

IPC: C09D183/04 ,  H01L21/312

Abstract: PURPOSE:To provide a coating solution comprising the reaction product of an alkylsilicate condensate with a carboxylic acid and the hydrolytic product of a tetraalkoxysilane and used for forming silica coating films having excellent etching processing characteristics and not generating cracks. CONSTITUTION:A silica solution for forming coating film comprises (A) a silica condensation product and (B) a hydrolysis product in a ratio of 1/0.1 to 1/0.7, preferably 1/0.2 to 1/0.5, between the Si atom of the component A and the Si atom of the component B. The hydrolysis product is obtained by reacting A1: an alkoxysilicate condensate of formula I (R1 to R5 are alkyl, alkoxyalkyl; R6 is alkyl, alkoxyalkyl; m is an integer of >=2; n is an integer satisfied with 0 =0.2 mole to the moles of an ienquality II (m+n is an average degree of condensation) per g atom of the Si of the component A1. The hydrolysis product B is obtained by mixing B1: 1 mole of a tetraalkoxysilane of formula III (R7 is alkyl, phenyl) with B2: >=2 moles of water in an organic solvent.

公开(公告)号：JPH0236529A

公开(公告)日：1990-02-06

申请号：JP18746288

申请日：1988-07-26

Applicant: SUMITOMO CHEMICAL CO

Inventor： INOUE HARUO ,  NAKADA TAKASHI ,  TAKASHIMA MASAYUKI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768

Abstract: PURPOSE:To enable the multilayer interconnection to be performed for manufacturing a high speed device of high integration by a method wherein the relation between the etching rate of a polysiloxane base coating film as an upper layer and that of a CVD film as a lower layer is specified to remove most part of the film formed on the stepped part by an etching back process. CONSTITUTION:In order to flatten the stepped part on a wafer caused in multilayer interconnection process in the manufacture of semiconductors, an interlayer insulating film comprising a CVD film as a lower layer and a polysiloxane base coating film as an upper layer laminated with each other is formed to remove most of the film formed on the stepped part by etch back process meeting the requirement of A

公开(公告)号：JP2014043572A

公开(公告)日：2014-03-13

申请号：JP2013160713

申请日：2013-08-01

Applicant: Sumitomo Chemical Co Ltd ,  住友化学株式会社

Inventor： TAKASHIMA MASAYUKI ,  YOSHIKAWA TAKESHI ,  KAMEDA TAKASHI

IPC: C08L83/04 ,  C08K3/22 ,  C08K3/36 ,  C08K5/5415

Abstract: PROBLEM TO BE SOLVED: To provide a silicone resin composition for obtaining a cured product excellent in gas barrier property, crack resistance and adhesiveness.SOLUTION: A silicone resin composition is liquid in a temperature range of 20°C or more and 50°C or less and contains a silicone resin. In theSi-NMR measurement, the proportion of a signal area attributed to A3 silicon atom in the area of all signals derived from silicon atoms included in a chemical shift range of -200 ppm or more and 100 ppm or less is 51% or more and 69% or less (where A3 silicon atom represents a silicon atom to which three oxygen atoms are bonded).

Abstract translation: 要解决的问题：提供一种用于获得阻气性，抗裂性和粘合性优异的固化产物的硅树脂组合物。溶液：有机硅树脂组合物在20℃以上至50℃的温度范围内为液体，或 少并含有硅树脂。 在Si-NMR测定中，在-200ppm以上且100ppm以下的化学位移范围包含的所有来自硅原子的信号的面积中归属于A3硅原子的信号区域的比例为51％以上， 69％以下（其中，A3硅原子表示与三个氧原子结合的硅原子）。

公开(公告)号：JP2012167357A

公开(公告)日：2012-09-06

申请号：JP2011031425

申请日：2011-02-16

Applicant: Sumitomo Chemical Co Ltd ,  住友化学株式会社

Inventor： YAMASHITA KAZUKI ,  SATO HISAYA ,  TAKASHIMA MASAYUKI

IPC: C23C14/34

Abstract: PROBLEM TO BE SOLVED: To provide a processing method capable of eliminating reprocessing for removing a surface with surface oxidation discoloration by preventing surface oxidation discoloration which occurs during cutting processing of a massive object composed of copper or copper alloy, and further capable of preventing surface oxidation discoloration in the atmosphere in a workpiece after cutting processing over a long period of time.SOLUTION: The processing method of copper or copper alloy includes: a layer forming step and a cutting processing step. In the layer forming step, an antioxidant layer 15a containing an antioxidant is formed on the surface of the massive object 15 composed of copper or copper alloy. In the cutting processing step, the massive object 15 with the antioxidant layer 15a formed thereon is subjected to cutting processing within processing fluid 16 so as to have a predetermined shape.

Abstract translation: 要解决的问题：提供一种处理方法，其能够通过防止由铜或铜合金构成的块状物体的切削加工期间发生的表面氧化变色而消除表面氧化变色的表面的再加工，并且还能够 防止在长时间的切割加工后的工件中的气氛中的表面氧化变色。 铜或铜合金的加工方法包括：层形成步骤和切割加工步骤。 在层形成工序中，在由铜或铜合金构成的块状物15的表面上形成含有抗氧化剂的抗氧化层15a。 在切割加工步骤中，在其上形成有抗氧化层15a的块状物体15在处理液16内进行切割处理以具有预定的形状。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2005060660A

公开(公告)日：2005-03-10

申请号：JP2004053332

申请日：2004-02-27

Applicant: Sumitomo Chemical Co Ltd ,  住友化学株式会社

Inventor： TAKASHIMA MASAYUKI

IPC: C11D10/02 ,  C11D1/72 ,  C11D1/83 ,  C11D3/20 ,  C11D3/33 ,  C11D17/08 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a cleaning solution for semiconductor substrates having excellent cleaning properties to particular foreign materials and ionic foreign materials on the semiconductor substrates after CMP process, and excellent in temperature dependent stability.
SOLUTION: The cleaning solution for semiconductor substrates comprises a nonionic surfactant expressed by general formula (1): R-(CH
2 )
1 -O-(C
m H
2m O)
n -X (wherein R expresses a 1-10C alkyl; a 6-10C aryl; a 2-10C alkynyl or a 2-10C alkenyl; l, m and n express each independently a positive number; X expresses H or a 1-4C alkyl), a chelating agent, a chelation-accelerator and an anionic surfactant.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了在CMP工艺之后，在半导体衬底上提供对特定异物和离子异物具有优异清洁性能的半导体衬底的清洁溶液，并且具有优异的温度依赖稳定性。 解决方案：用于半导体衬底的清洁溶液包括由通式（1）表示的非离子型表面活性剂：R-（CH 2 SB）2 -S-（C < （其中R表示1-10C烷基; 6-10C芳基; 2-10C炔基或者2-10C炔基）;其中R表示1-10C烷基; 6-10C芳基; 2-10C炔基或 2-10C烯基; l，m和n各自独立地表示正数; X表示H或1-4C烷基），螯合剂，螯合促进剂和阴离子表面活性剂。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001316856A

公开(公告)日：2001-11-16

申请号：JP2000133330

申请日：2000-05-02

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI

IPC: C23F11/00 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a liquid for preventing metal from oxidation with a less harm to human health and ecosystem via a water environment, and to provide a method for preventing oxidation with the liquid for preventing oxidation. SOLUTION: The treatment liquid for preventing metal from oxidation is neutral, and includes an aliphatic alcohol compound having at least one mercapto-group in the molecule and 2 or more carbons composing the compound, in which a carbon coupled with the mercapto-group is adjacently combined with a carbon coupled with a hydroxy-group, and water. The method for preventing oxidation includes treating a metal film used for a semiconductor device with the treatment liquid.