公开(公告)号：DE69600105T2

公开(公告)日：1998-04-09

申请号：DE69600105

申请日：1996-05-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  NISHIOKA TAKAO ,  YAMAKAWA AKIRA

IPC: C04B35/584 ,  C04B35/593 ,  C04B35/64 ,  C04B35/587

Abstract: The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500 - 5000 ppm metal impurities is sintered at temperatures ranging from 1300 - 1900 DEG CÄdegrees CÜ, and under the conditions wherein the product of sintering temperature and sintering time ranges from 1 x 10 to 10x 10 DEG C Ädegrees CÜ.seconds.

公开(公告)号：DE69600105D1

公开(公告)日：1998-01-02

申请号：DE69600105

申请日：1996-05-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  NISHIOKA TAKAO ,  YAMAKAWA AKIRA

IPC: C04B35/584 ,  C04B35/593 ,  C04B35/64 ,  C04B35/587

Abstract: The invention aims to offer a method to manufacture a high-strength, high-reliability and low cost silicon nitride based sintered body which is not affected by the amount of metal impurities contained in the silicon nitride powder, without using high-purity silicon nitride powder, and can be sintered for a short sintering time. The invention uses silicon nitride and sintering aids, and the powder mixture containing 500 - 5000 ppm metal impurities is sintered at temperatures ranging from 1300 - 1900 DEG CÄdegrees CÜ, and under the conditions wherein the product of sintering temperature and sintering time ranges from 1 x 10 to 10x 10 DEG C Ädegrees CÜ.seconds.

公开(公告)号：DE69218665T2

公开(公告)日：1997-11-27

申请号：DE69218665

申请日：1992-05-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  HIGAKI KENJIRO ,  ITOZAKI HIDEO

IPC: C04B41/80 ,  C01G1/00 ,  C04B41/87 ,  C23C14/58 ,  H01L39/24 ,  H01P11/00 ,  H05K1/09 ,  H05K3/16 ,  H01L39/14

公开(公告)号：CA2043545C

公开(公告)日：1997-03-04

申请号：CA2043545

申请日：1991-05-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  NAKANISHI HIDENORI ,  ITOZAKI HIDEO ,  MATSUURA TAKASHI

IPC: H01L39/24

Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a nonsuperconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400 .degree.C during deposition of the non-superconducting intermediate thin film layer.

公开(公告)号：DE69115764D1

公开(公告)日：1996-02-08

申请号：DE69115764

申请日：1991-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ITOZAKI HIDEO ,  HATTORI HISAO ,  HARADA KEIZO ,  MATSUURA TAKASHI

IPC: C01B13/14 ,  C01G1/00 ,  C01G3/00 ,  C23C14/34 ,  C23C14/50 ,  C30B23/08 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24 ,  C23C14/56 ,  H01J37/34

公开(公告)号：DE69016283T2

公开(公告)日：1995-08-03

申请号：DE69016283

申请日：1990-07-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HIGAKI KENJIRO ,  HARADA KEIZO ,  MATSUURA TAKASHI ,  OYAMA HITOSHI ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/89 ,  C30B23/02 ,  H01L39/08 ,  H01L39/12 ,  H01L39/24

公开(公告)号：CA2020302C

公开(公告)日：1995-06-27

申请号：CA2020302

申请日：1990-07-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HIGAKI KENJIRO ,  HARADA KEIZO ,  MATSUURA TAKASHI ,  OYAMA HITOSHI ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/89 ,  C30B23/02 ,  H01L39/08 ,  H01L39/12 ,  H01L39/24

Abstract: A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of coppercontaining oxide is interposed between the substrate and the superconducting thin film.

公开(公告)号：CA2073831A1

公开(公告)日：1993-01-17

申请号：CA2073831

申请日：1992-07-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

公开(公告)号：DE60142458D1

公开(公告)日：2010-08-12

申请号：DE60142458

申请日：2001-01-19

Applicant: JAPAN FINE CERAMICS CT NAGOYA ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： NISHIBAYASHI YOSHIKI ,  MATSUURA TAKASHI ,  IMAI TAKAHIRO

IPC: H01L23/373 ,  H05K1/03 ,  H01L21/48 ,  H01L23/498 ,  H05K3/10 ,  H05K3/14

公开(公告)号：DE60316469D1

公开(公告)日：2007-10-31

申请号：DE60316469

申请日：2003-12-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： USHIRO TOSHIHIKO ,  OKUBO SOICHIRO ,  MATSUURA TAKASHI

IPC: H01S5/028 ,  G02B5/18 ,  G02B27/00 ,  H01S5/026

Abstract: Affords efficiently and at low cost practical, tiny light-emitting devices having an optically diffractive film on their light-output face. A light-emitting device (LD) includes a diffractive film (DF) formed on its light-output face; the diffractive film includes a transparent DLC (diamond-like carbon) layer; and the DLC layer includes a modulated-refractive-index diffraction grating containing local regions of relatively high refractive index and local regions of relatively low refractive index.