公开(公告)号：EP1746641A4

公开(公告)日：2009-07-08

申请号：EP06715178

申请日：2006-03-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANABE TATSUYA ,  KIYAMA MAKOTO ,  MIURA KOUHEI ,  SAKURADA TAKASHI

IPC: H01L21/338 ,  H01L21/205 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/66462 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L29/7787

Abstract: Disclosed is a group III nitride semiconductor device wherein leakage current from a Schottky electrode is reduced. In a high-electron-mobility transistor (1), a supporting substrate (3) is composed of AlN, AlGaN and GaN. An AlYGa1-YN epitaxial layer (5) has a surface roughness (Rms) of not more than 0.25 nm, and this surface roughness is defined by a 1 μm square area. A GaN epitaxial layer (7) is formed between the AlYGa1-YN supporting substrate (3) and the AlYGa1-YN epitaxial layer (5). A Schottky electrode (9) is formed on the AlYGa1-YN epitaxial layer (5). A first ohmic electrode (11) is formed on the AlYGa1-YN epitaxial layer (5), and a second ohmic electrode (13) is formed on the AlYGa1-YN epitaxial layer (5). One of the first and second ohmic electrodes (11, 13) is a source electrode, and the other is a drain electrode. The Schottky electrode (9) is a gate electrode of the high-electron-mobility transistor (1).

Abstract translation: 公开了一种III族氮化物半导体器件，其中来自肖特基电极的泄漏电流减小。 在高电子迁移率晶体管（1）中，支撑衬底（3）由A​​lN，AlGaN和GaN组成。 AlYGa1-YN外延层（5）具有不大于0.25nm的表面粗糙度（Rms），并且该表面粗糙度由1μm的正方形面积限定。 在AlYGa1-YN支撑衬底（3）和AlYGa1-YN外延层（5）之间形成GaN外延层（7）。 肖特基电极（9）形成在AlYGa1-YN外延层（5）上。 在AlYGa1-YN外延层（5）上形成第一欧姆电极（11），在AlYGa1-YN外延层（5）上形成第二欧姆电极（13）。 第一和第二欧姆电极（11,13）之一是源电极，另一个是漏电极。 肖特基电极（9）是高电子迁移率晶体管（1）的栅电极。

公开(公告)号：EP1863075A4

公开(公告)日：2009-04-29

申请号：EP06715282

申请日：2006-03-06

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANABE TATSUYA ,  MIURA KOUHEI ,  KIYAMA MAKOTO ,  SAKURADA TAKASHI

IPC: H01L29/778 ,  H01L21/20 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003

公开(公告)号：JPH0413871A

公开(公告)日：1992-01-17

申请号：JP11641290

申请日：1990-05-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  TAKEBE TOSHIHIKO ,  SHIRAKAWA FUTATSU

IPC: C23C14/54 ,  H01L21/285

Abstract: PURPOSE:To carry out the uniform vapor deposition all over the surface of a wafer of large diameter by forming the through-hole of the chopper provided in the middle part between an evaporating source and a wafer so that the opening part becomes larger as the radius becomes larger. CONSTITUTION:Material to be vapor-deposited from an evaporation source is deposited on a wafer to obtain the semiconductor wafer formed in a pattern. In the above- mentioned vapor deposition apparatus of semiconductor wafer, the chopper having the through-hole is disposed in the middle part between the evaporation source and the wafer. In this case, the through-hole is so formed that the ratio (a) of the opening part occupying the circumference of the circle of radius (r) becomes larger as the radius becomes larger. The pattern of through-hole of this chipper satisfies the equation; where L is distance between evaporation source and wafer, (l) is distance between evaporation source and chopper, rx is radius from center of chopper, ro is distance between the center and the position when outermost periphery is seen from evaporation source, Sx, So are distances of parts of chopper respectively on circumferences of circles of radiuses rx, ro. Moreover, the chopper is preferably provided to be rotatable around its center located right above the evaporation center. By this method, uniform amount of vapor deposition is obtained, and the electrode pattern of uniform thickness is formed all over the surface of wafer.

公开(公告)号：JPH04279828A

公开(公告)日：1992-10-05

申请号：JP6927591

申请日：1991-03-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  NISHINE SHIRO

IPC: G01J1/04 ,  G01J1/22 ,  G01J1/58 ,  H01L21/66

Abstract: PURPOSE:To remove the fluorescence being produced from a sharp-cut filter for cutting the reflection light of a laser beam because it forms a background, by obtaining the mixed-crystal ratio x from the peak-energy value of a photoluminescence spectrum by utilizing that the mixed-crystal ratio x of an AlGaAs mixed-crystal is a function of the band gap. CONSTITUTION:A laser beam is turned into a beam of linearly polarized light and is made incident on a specimen 5, and since the reflected light from the specimen 5 is elliptically polarized light, it is turned into linearly polarized light by means of a 1/4 wavelength plate 6, and then it is transmitted to an analyzer 7 having the polarizing direction perpendicular thereto. The reflected light of the laser beam cannot pass through the analyzer 7, and fluorescence is not produced because of a sharp-cut filter 8.

公开(公告)号：JPH03245024A

公开(公告)日：1991-10-31

申请号：JP4349390

申请日：1990-02-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  TAKEBE TOSHIHIKO ,  SHIRAKAWA FUTATSU

IPC: G01J1/42

Abstract: PURPOSE:To measure the diameter of a beam accurately by measuring the intensity of emitted light from an illuminated region of a laser beam at the surface of a direct transition type semiconductor substrate, and obtaining the data with respect to the profile of the laser beam based on the measured value. CONSTITUTION:A laser beam 11a generated in a laser device 10 is inputted into a laser-beam measuring optical system 12. The laser beam passes through a passing hole 17 of a concave mirror 16 as a laser beam 11b through a chopper 13 and a beam expander 15. The laser beam is projected on a direct-transition type semiconductor substrate 19 which is provided on a substrate stage 18. Then light is emitted with the beam 11b which is projected on a reference surface 19a of the substrate 19. The emitted light 20a is condensed at a concave lens 21 through the concave mirror 16. The emitted light 20b which has passed the concave lens 21 is inputted into a spectroscope 23 as the emitted light 20c through a convex lens 22. The emitted light 20c is converted into the electric signal with the photoelectric element of a detector 24. The signal is sent into a lock-in amplifier 25. The signal undergoes phase detection with the frequency with a chopper 13. After the effects of stray light and the like are removed, the signal is processed with a computer 26 as the data.

公开(公告)号：JPH0487348A

公开(公告)日：1992-03-19

申请号：JP20276590

申请日：1990-07-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  TAKEBE TOSHIHIKO

IPC: H01L21/66

Abstract: PURPOSE:To carry out simple and non-destructive evaluation of the semiconductiveness of an AlGaAs layer by measuring the light emitting spectral belonging to the impurity that provides the peak of light emission in the neighborhood of a predetermined energy under a particular temperature condition. CONSTITUTION:Hold a sample at around a liquid helium temperature of 4.2K, emit light having an energy of higher than a band gap to the AlGaAs layer on the sample, and use a spectroscope to resolute light from the center of light source. The photo energy at the peak of this light emitting spectral is about 1.04eV. In this light emitting spectral, obtain a ratio of the peak strength to the reference peak strength positioned at a level of about 1.04eV photo energy. On the other hand, apply a sample measured for photoluminescence for Hall measurement to obtain the carrier density. The ratio of peak strength is plotted on the axis of abscissa in the graph as shown on the right-hand side, and the obtained carrier density is plotted on the axis of ordinate in the graph. The semiconductiveness of the AlGaAs layer can be judged by whether or not the layer has a sufficiently high resistance value as the buffer layer of FET.

公开(公告)号：JPH0339637A

公开(公告)日：1991-02-20

申请号：JP17634889

申请日：1989-07-06

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  TAKEBE TOSHIHIKO ,  SHIRAKAWA FUTATSU

IPC: G01N21/64

Abstract: PURPOSE:To decrease the loss of the intensity of luminescence light by incorporating a coaxial light guide or coaxial image guide having lenses at the front end into the position opposite to sample surfaces through the wall of a cryostat. CONSTITUTION:Plural samples 4 are fixed to a support 3 and are inserted into a sample chamber 6. A male connector 12 connected to a white light source and microscope is inserted into the hole of a female connector 2 mating with the coaxial image guide 1 in the position aligned to the samples 4 to be measured. White light is introduced through the outer path 25 of the guide 1 and is cast to the surfaces of the samples 4. The state thereof is observed through the central path 14 of the guide 1 with the microscope. The measuring positions on the samples 4 are then adjusted by a three-dimensional fine adjusting device. The connector 12 is removed and a spectroscope and a male connector 13 connected to a laser are connected. The stimulating light is guided through the paths 14 and is cast to the samples 4. The luminescence light emitted from the samples 4 is condensed by the lens 16 and is introduced to the spectroscope past the paths 15. The light is spectrally divided by the spectroscope and is photometrically measured by the detector.

公开(公告)号：JPH02168102A

公开(公告)日：1990-06-28

申请号：JP32202488

申请日：1988-12-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  SHIRAKAWA FUTATSU

IPC: G01B11/06

Abstract: PURPOSE:To enable accurate measurement of the film thickness of each layer of a semiconductor multilayer thin film by making a monochromatic light of a prescribed long wavelength incident vertically while varying the wavelength continuously and by measuring the spectrum of a transmitted light. CONSTITUTION:A white light being used as a prober, the light incident vertically on a multilayer thin film is reflected in a multiple way by each layer and then emitted as a transmitted light from the back of a crystal. The intensity of this transmitted light is detected as a superposition of an oscillation spectrum corresponding to the film thickness of each layer as shown in a Figure (b) in a transmission area of a semiconductor constituting the thin film. By subjecting this spectrum to Fourier transform in an appropriate range of wavelength, the spectrum at a position proportional to the film thickness of each layer can be known exactly as shown in Figure (c). From the value of this spectrum, the film thicknesses of a plurality of thin films can be determined simultaneously.

公开(公告)号：JPH0555131A

公开(公告)日：1993-03-05

申请号：JP21336791

申请日：1991-08-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  KIYAMA MAKOTO ,  NISHINE SHIRO

IPC: B05C11/08 ,  B05D1/40 ,  H01L21/027

Abstract: PURPOSE:To provide method and device for coating the whole surface of a wafer with resist in uniform thickness. CONSTITUTION:The method and device drops resist on a wafer 4 which is fixed on a revolving head 3, revolves the revolving head 3 and the dropped resist liquid is spread on the surface of the wafer 4. First, as shown by the figure (a), the resist liquid is dropped on a plurality of parts which are on the wafer 4 and that have different distances from the revolving center from a plurality of nozzles 6, 7 and 8, and the viscosity of the resist liquid becomes higher as the distance from the revolving center becomes longer. Then, as shown by the figure (b), the resist liquid is spread on the wafer while heating the dropped resist liquid by a heat source 10 provided above the revolving center of the wafer.

公开(公告)号：JP2001135590A

公开(公告)日：2001-05-18

申请号：JP31526099

申请日：1999-11-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI

IPC: H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor heat treating method whereby Si is not diffused in a GaAs substrate and neither slip nor wafer warp occurs during annealing of the GaAs substrate implanted with Si ions. SOLUTION: A waiting step is provided for lowering the temperature rise rate in a temperature range where the slip may occur in a temperature rising process for heat treatment, or a waiting step is provided for lowering the temperature fall rate in a temperature range where the slip may occur in a temperature falling process after the heat treatment. The waiting step reduces the temperature difference between the central part and the peripheral part of a wafer to prevent the slip or warp from occurring.