公开(公告)号：EP2324489A4

公开(公告)日：2013-09-11

申请号：EP09805391

申请日：2009-08-03

Applicant: SUNLIGHT PHOTONICS INC

Inventor： BRUCE ALLAN JAMES ,  FROLOV SERGEY ,  CYRUS MICHAEL

IPC: H01L21/36 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L21/02551 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02617 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material.

Abstract translation: 提供了制造薄膜半导体器件的方法。 该方法包括提供多个原始半导体材料。 原料半导体材料经历预反应过程以形成均匀的化合物半导体材料。 该预反应通常包括高于化合物半导体的液相线温度的处理。 化合物半导体材料被还原成颗粒形式并沉积到基底上以形成具有与化合物半导体材料的组成和原子结构基本相同的组成和原子结构的薄膜。

公开(公告)号：EP2481081A4

公开(公告)日：2013-10-30

申请号：EP10819288

申请日：2010-09-20

Applicant: US GOV SEC NAVY ,  SUNLIGHT PHOTONICS INC

Inventor： FRANTZ JESSE A ,  SANGHERA JASBINDER S ,  BEKELE ROBEL Y ,  NGUYEN VINH Q ,  AGGARWAL ISHWAR D ,  BRUCE ALLAN J ,  CYRUS MICHAEL ,  FROLOV SERGEY V

IPC: H01L21/00

CPC classification number: H01J37/3429 ,  C23C14/0623 ,  C23C14/087 ,  C23C14/3414 ,  C23C14/3464 ,  H01J37/3414 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

公开(公告)号：EP2480700A4

公开(公告)日：2013-10-30

申请号：EP10819289

申请日：2010-09-20

Applicant: US GOV SEC NAVY ,  SUNLIGHT PHOTONICS INC

Inventor： NGUYEN VINH Q ,  FRANTZ JESSE A ,  SANGHERA JASBINDER S ,  AGGARWAL ISHWAR D ,  BRUCE ALLAN J ,  CYRUS MICHAEL ,  FROLOV SERGEY V

IPC: H01L21/00

CPC classification number: H01J37/3429 ,  C23C14/0623 ,  C23C14/087 ,  C23C14/3414 ,  C23C14/3464 ,  H01J37/3414 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

公开(公告)号：EP2255392A4

公开(公告)日：2013-10-16

申请号：EP09715056

申请日：2009-02-26

Applicant: SUNLIGHT PHOTONICS INC

Inventor： FROLOV SERGEY ,  CYRUS MICHAEL

IPC: H01L25/04 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/052

CPC classification number: H01L31/022433 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/043 ,  H01L31/0543 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/207 ,  Y02E10/52 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/0002