公开(公告)号：US11302660B2

公开(公告)日：2022-04-12

申请号：US16803529

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Il Choi ,  Un-Byoung Kang ,  Jin Ho An ,  Jongho Lee ,  Jeonggi Jin ,  Atsushi Fujisaki

IPC: H01L23/00

Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer and a conductive element in the insulating layer. The semiconductor device includes a first barrier pattern in contact with a surface of the conductive element and a surface of the insulating layer. The semiconductor device includes a second barrier pattern on the first barrier pattern. Moreover, the semiconductor device includes a metal pattern on the second barrier pattern. Related semiconductor packages are also provided.

公开(公告)号：US20210343634A1

公开(公告)日：2021-11-04

申请号：US17099929

申请日：2020-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Il CHOI ,  Jumyong Park ,  Jin Ho An ,  Chungsun Lee ,  Teahwa Jeong ,  Jeonggi Jin

IPC: H01L23/498 ,  H01L25/10 ,  H01L25/065 ,  H01L23/31

Abstract: An interconnection structure includes a dielectric layer, and a wiring pattern in the dielectric layer. The wiring pattern includes a via body, a first pad body that vertically overlaps the via body, and a line body that extends from the first pad body. The via body, the first pad body, and the line body are integrally connected to each other, and a level of a bottom surface of the first pad body is lower than a level of a bottom surface of the line body.